MT41K256M16LY-093:N

MT41K256M16LY-093:N
Mfr. #:
MT41K256M16LY-093:N
製造商:
Micron
描述:
IC DRAM 4G PARALLEL 1067MHZ
生命週期:
製造商新產品
數據表:
MT41K256M16LY-093:N 數據表
交貨:
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MT41K256M16LY-093:N 更多信息 MT41K256M16LY-093:N Product Details
產品屬性
屬性值
製造商
美光
產品分類
記憶
Tags
MT41K256M16LY-0, MT41K256M16L, MT41K256M1, MT41K25, MT41K2, MT41K, MT41, MT4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
DRAM
Alliance Memory DDR1, SDRAM, and DRAM ranges have high-speed data rates, with memory sizes from 64M to 512M. The memory has commercial (0°C~70°C) and industrial (-40°C~85°C) temperatures. Other features include clock frequency range of 133MHz to 167MHz, data bus width range of 8-bit to 64-bit, with an access time of 5.4ns. Available in TSOP and BGA packages.
MT41x DDR3 SDRAMs
Alliance Memory MT41x DDR3 SDRAMs use double data rate architecture with an interface to transfer two data words per clock cycle at I/O pins. The MT41x DDR3's double data rate architecture is an 8n-prefetch architecture that helps to achieve high-speed operations. These SDRAMs operate from CK and CK# differential clock inputs. The MT41x DDR3 employs a burst-orientated approach to read and write with access starting at the selected location and continuing in a programmed sequence. These SDRAMs use READ and WRITE BL8 and BC4. The MT41x DDR3 SRAMs are able to carry out concurrent operations due to their pipelined and multibank architecture. This helps in providing high bandwidth by hiding row precharge and activation time. These SDRAMs feature self-refresh mode, power-saving mode, and power-down mode.
DDR3L SDRAM
Alliance Memory DDR3L SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock-cycle data transfer at the internal DRAM core and eight corresponding  n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.
型號 製造商 描述 庫存 價格
MT41K256M16LY-093:N TR
DISTI # MT41K256M16LY-093:NTR-ND
Micron Technology IncIC DRAM 4G PARALLEL 96FBGA
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Limited Supply - Call
    MT41K256M16LY-093:N
    DISTI # MT41K256M16LY-093:N-ND
    Micron Technology IncIC DRAM 4G PARALLEL 1067MHZ
    RoHS: Compliant
    Min Qty: 1080
    Container: Tray
    Limited Supply - Call
      MT41K256M16LY-093:N
      DISTI # 340-257987-TRAY
      Micron Technology IncDRAM
      RoHS: Compliant
      0
        MT41K256M16LY-093:N TR
        DISTI # 340-257987-REEL
        Micron Technology IncDRAM DDR3 4G 256MX16 FBGA
        RoHS: Compliant
        0
          MT41K256M16LY-093:NMicron Technology IncINSTOCK55818
            圖片 型號 描述
            MT41K256M8DA-107 AAT:K TR

            Mfr.#: MT41K256M8DA-107 AAT:K TR

            OMO.#: OMO-MT41K256M8DA-107-AAT-K-TR

            DRAM DDR3 2G 256MX8 FBGA
            MT41K256M16TW-107 XIT:P TR

            Mfr.#: MT41K256M16TW-107 XIT:P TR

            OMO.#: OMO-MT41K256M16TW-107-XIT-P-TR

            DRAM DDR3 4G 256MX16 FBGA
            MT41K256M16HA-107G:E D9PZD

            Mfr.#: MT41K256M16HA-107G:E D9PZD

            OMO.#: OMO-MT41K256M16HA-107G-E-D9PZD-1190

            全新原裝
            MT41K256M16TW-107 AAT:P TR

            Mfr.#: MT41K256M16TW-107 AAT:P TR

            OMO.#: OMO-MT41K256M16TW-107-AAT-P-TR-MICRON-TECHNOLOGY

            IC DRAM 4G PARALLEL 96FBGA Automotive, AEC-Q100
            MT41K256M8DA-125 IT:K TR

            Mfr.#: MT41K256M8DA-125 IT:K TR

            OMO.#: OMO-MT41K256M8DA-125-IT-K-TR-MICRON-TECHNOLOGY

            DDR3 2G 256MX8 FBGA
            MT41K256M8DA-125:K

            Mfr.#: MT41K256M8DA-125:K

            OMO.#: OMO-MT41K256M8DA-125-K-MICRON-TECHNOLOGY

            DRAM Chip DDR3L SDRAM 2Gbit 256Mx8 1.35V 78-Pin FBGA
            MT41K256M16TW-107 IT:P

            Mfr.#: MT41K256M16TW-107 IT:P

            OMO.#: OMO-MT41K256M16TW-107-IT-P-230

            DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin FBGA
            MT41K256M16TW-107 M AIT:

            Mfr.#: MT41K256M16TW-107 M AIT:

            OMO.#: OMO-MT41K256M16TW-107-M-AIT--1190

            全新原裝
            MT41K256M32SLD-125E

            Mfr.#: MT41K256M32SLD-125E

            OMO.#: OMO-MT41K256M32SLD-125E-1190

            全新原裝
            MT41K256M8DA-125 IT

            Mfr.#: MT41K256M8DA-125 IT

            OMO.#: OMO-MT41K256M8DA-125-IT-1190

            全新原裝
            可用性
            庫存:
            Available
            訂購:
            4500
            輸入數量:
            MT41K256M16LY-093:N的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
            參考價格(美元)
            數量
            單價
            小計金額
            1
            US$0.00
            US$0.00
            10
            US$0.00
            US$0.00
            100
            US$0.00
            US$0.00
            500
            US$0.00
            US$0.00
            1000
            US$0.00
            US$0.00
            由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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