MJE13003G

Mfr. #:: MJE13003G
製造商:: ON Semiconductor
描述:: Bipolar Transistors - BJT BIP NPN 2A 400V
生命週期:: 製造商新產品
數據表:: MJE13003G 數據表
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HTML Datasheet:: MJE13003G Datasheet MJE13003G Datasheet (P4-P6)MJE13003G Datasheet (P7-P8)
ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: 雙極晶體管 - BJT

RoHS：: Y

安裝方式：: 通孔

包裝/案例：: TO-225-3

晶體管極性：: NPN

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 400 V

集電極-基極電壓 VCBO：: 100 V

發射極基極電壓 VEBO：: 5 V

集電極-發射極飽和電壓：: 0.5 V

最大直流集電極電流：: 1.5 A

增益帶寬積 fT：: 3 MHz

最低工作溫度：: - 65 C

最高工作溫度：: + 150 C

高度：: 11.04 mm

長度：: 7.74 mm

寬度：: 2.66 mm

品牌：: 安森美半導體

連續集電極電流：: 1.5 A

DC 集電極/基極增益 hfe 最小值：: 8

Pd - 功耗：: 1.4 W

產品類別：: BJT - 雙極晶體管

出廠包裝數量：: 500

子類別：: 晶體管

單位重量：: 0.068784 oz

Tags: MJE13003G, MJE13003, MJE1300, MJE130, MJE13, MJE1, MJE

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MJE13003G 描述

***emi: 15A400VNPNBipolarPowerTransistor

***ical: TransGPBJTNPN400V15A3PinTO225Bulk

***ark: RfTransistorNpn400V10MhzTo225;TransistorPolaritynpn;CollectorEmitterVoltageVBrCeo400V;DcCollectorCurrent15A;PowerDissipationPd14W;TransistorMountingthroughHole;NoOfPins3Pins;ProductRangeRohsCompliantYes

***thStarMicro: ThesedevicesaredesignedforhighvoltagehighspeedpowerswitchinginductivecircuitswherefalltimeiscriticalTheyareparticularlysuitedfor115and220VSWITCHMODEapplicationssuchasSwitchingRegulatorsInvertersMotorControlsSolenoidRelaydriversandDeflectioncircuits

***nell: TRANSISTORNPNTO126;TransistorPolarityNPN;CollectorEmitterVoltageVbrceo400V;TransitionFrequencyft10MHz;PowerDissipationPd14W;DCCollectorCurrent15A;DCCurrentGainhFE4hFE;TransistorCaseStyleTO126;NoofPins3Pins;OperatingTemperatureMax150C;ProductRange;AutomotiveQualificationStandard;MSL;SVHCNoSVHC15Jan2018;ApplicationCodePHVS;AvCurrentIc15A;CollectorEmitterSaturationVoltageVceon1V;ContinuousCollectorCurrentIcMax15A;CurrentIcVceSat1A;CurrentIcContinuousaMax15A;CurrentIchFE1mA;DeviceMarkingMJE13003;FallTimeIc07s;FallTimetf700s;FullPowerRatingTemperature25C;GainBandwidthftMin4MHz;GainBandwidthftTyp10MHz;HfeMin5;NoofTransistors1;PowerDissipationPtotMax40W;VoltageVcbo10VDC;VoltageVceSatIcNPNMax1V;VoltageVceoMax400V;VoltageVces700V

Market price

型號	製造商	描述	庫存	價格
MJE13003G DISTI # MJE13003GOS-ND	ON Semiconductor	TRANS NPN 400V 1.5A TO-225 RoHS: Compliant Min Qty: 1500 Container: Bulk	Limited Supply - Call
MJE13003G DISTI # 71J5859	ON Semiconductor	RF TRANSISTOR, NPN, 400V, 10MHZ, TO-225,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:400V,Transition Frequency ft:10MHz,Power Dissipation Pd:1.4W,DC Collector Current:1.5A,DC Current Gain hFE:4hFE,Product Range:-RoHS Compliant: Yes	0
MJE13003G	ON Semiconductor	RoHS: Not Compliant	480	1000:$0.1600 100:$0.1700 500:$0.1700 25:$0.1800 1:$0.1900
MJE13003 DISTI # 863-MJE13003	ON Semiconductor	Bipolar Transistors - BJT BIP NPN 2A 400V RoHS: Not compliant	0
MJE13003G DISTI # 863-MJE13003G	ON Semiconductor	Bipolar Transistors - BJT BIP NPN 2A 400V RoHS: Compliant	0
MJE13003G DISTI # 9556273	ON Semiconductor	TRANSISTOR, NPN, TO-126 RoHS: Compliant	0	1:$1.3000 10:$0.9740 100:$0.6240 250:$0.5200 500:$0.4460 1000:$0.3120

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