SIA527DJ-T1-GE3

Name: Vishay - SIA527DJ-T1-GE3
Brand: Vishay
SKU: OMO-3518518
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIA527DJ-T1-GE3
製造商:: Vishay
描述:: MOSFET N/P-CH 12V 4.5A SC-70-6
生命週期:: 製造商新產品
數據表:: SIA527DJ-T1-GE3 數據表
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更多信息:: SIA527DJ-T1-GE3 更多信息

產品屬性
屬性值

製造商: 威世矽

產品分類: FET - 陣列

系列: 溝槽FETR

打包: Digi-ReelR 替代包裝

單位重量: 0.000988 oz

安裝方式: 貼片/貼片

商品名: 溝槽場效應晶體管

包裝盒: PowerPAKR SC-70-6 Dual

技術: 矽

工作溫度: -55°C ~ 150°C (TJ)

安裝型: 表面貼裝

通道數: 2 Channel

供應商-設備-包: PowerPAKR SC-70-6 Dual

配置: 1 N-Channel 1 P-Channel

FET型: N 和 P 溝道

最大功率: 7.8W

晶體管型: 1 N-Channel 1 P-Channel

漏源電壓 Vdss: 12V

輸入電容-Ciss-Vds: 500pF @ 6V

FET-Feature: 邏輯電平門

Current-Continuous-Drain-Id-25°C: 4.5A

Rds-On-Max-Id-Vgs: 29 mOhm @ 5A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

柵極電荷-Qg-Vgs: 15nC @ 8V

鈀功耗: 7.8 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 10 ns

上升時間: 10 ns

VGS-柵極-源極-電壓: + /- 8 V

Id 連續漏極電流: 4.5 A

Vds-漏-源-擊穿電壓: 12 V

VGS-th-Gate-Source-Threshold-Voltage: 1 V - 1 V

Rds-On-Drain-Source-Resistance: 41 mOhms

晶體管極性: N 溝道 P 溝道

典型關斷延遲時間: 22 ns

典型開啟延遲時間: 10 ns

Qg-門電荷: 5.6 nC

通道模式: 增強

Tags: SIA5, SIA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIA527DJ-T1-GE3 描述

***et Europe: Trans MOSFET N/P-CH 12V 4.5A/4.5A 6-Pin PowerPAK SC-70 T/R

*** Americas: N- AND P-CHANNEL 12-V (D-S) MOSFET

***ark: N/P-Ch PPAK SC-70 12V 29/41mohms @ 4.5V

***ronik: N+P-MOS-FET 4,5A 12V PP-SC70-6

SIA527DJ-T1-GE3 更多信息

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

N & P Channel Pair Thermally Enhanced MOSFETs: Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.

Market price

型號	製造商	描述	庫存	價格
SIA527DJ-T1-GE3 DISTI # V72:2272_09216728	Vishay Intertechnologies	Trans MOSFET N/P-CH Si 12V 4.5A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	4416	3000:$0.1770 1000:$0.2034 500:$0.2497 250:$0.2869 100:$0.3187 25:$0.4239 10:$0.4710 1:$0.6063
SIA527DJ-T1-GE3 DISTI # V36:1790_09216728	Vishay Intertechnologies	Trans MOSFET N/P-CH Si 12V 4.5A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	0	6000000:$0.1636 3000000:$0.1638 600000:$0.1750 60000:$0.1925 6000:$0.1953
SIA527DJ-T1-GE3 DISTI # SIA527DJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P-CH 12V 4.5A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	36100In Stock	1000:$0.2206 500:$0.2855 100:$0.3634 10:$0.4870 1:$0.5700
SIA527DJ-T1-GE3 DISTI # SIA527DJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 12V 4.5A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	36100In Stock	1000:$0.2206 500:$0.2855 100:$0.3634 10:$0.4870 1:$0.5700
SIA527DJ-T1-GE3 DISTI # SIA527DJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET N/P-CH 12V 4.5A SC-70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	33000In Stock	30000:$0.1613 15000:$0.1701 6000:$0.1827 3000:$0.1953
SIA527DJ-T1-GE3 DISTI # 27089799	Vishay Intertechnologies	Trans MOSFET N/P-CH Si 12V 4.5A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	4416	38:$0.6063
SIA527DJ-T1-GE3 DISTI # SIA527DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 12V 4.5A/4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA527DJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 12000
SIA527DJ-T1-GE3 DISTI # SIA527DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 12V 4.5A/4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA527DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1559 18000:€0.1669 12000:€0.1809 6000:€0.2109 3000:€0.3089
SIA527DJ-T1-GE3 DISTI # 67X6801	Vishay Intertechnologies	N- AND P-CHANNEL 12-V (D-S) MOSFET	0	50000:$0.1550 30000:$0.1620 20000:$0.1740 10000:$0.1860 5000:$0.2020 1:$0.2070
SIA527DJ-T1-GE3 DISTI # 78-SIA527DJ-T1-GE3	Vishay Intertechnologies	MOSFET -12V Vds 8V Vgs SC-70 N&P PAIR RoHS: Compliant	622	1:$0.5600 10:$0.4330 100:$0.3210 500:$0.2640 1000:$0.2040 3000:$0.1850 6000:$0.1730 9000:$0.1620