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FDMA1024NZ

FDMA1024NZ
Mfr. #:
FDMA1024NZ
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 20V Dual N-Channel PowerTrench
生命週期:
製造商新產品
數據表:
FDMA1024NZ 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
FDMA1024NZ 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
MicroFET-6
通道數：
2 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
20 V
Id - 連續漏極電流：
5 A
Rds On - 漏源電阻：
54 mOhms
Vgs - 柵源電壓：
8 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
1.4 W
配置：
雙重的
頻道模式：
增強
商品名：
動力戰壕
打包：
捲軸
高度：
0.75 mm
長度：
2 mm
產品：
MOSFET 小信號
系列：
FDMA1024NZ
晶體管類型：
2 N-Channel
寬度：
2 mm
品牌：
安森美半導體/飛兆半導體
秋季時間：
2.2 ns
產品類別：
MOSFET
上升時間：
2.2 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
18 ns
典型的開啟延遲時間：
5.3 ns
單位重量：
0.001411 oz
Tags
FDMA102, FDMA10, FDMA1, FDMA, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E***o
    E***o
    RU

    Everything is fine. Works. Delivery is fast.

    2019-05-13
    L***V
    L***V
    RU

    Quality board, packaging is good, delivery is 2 months.

    2019-05-23
    A***n
    A***n
    IL

    About yes

    2019-02-17
***Yang
Transistor MOSFET Array Dual N-CH 20V 5A 6-Pin MicroFET T/R - Tape and Reel
***emi
PowerTrench® MOSFET, Dual N-Channel, 20V, 5.0A, 54mΩ
***ure Electronics
FDMA1024NZ Series 20 V 5.0 A 54 mOhm Dual N-Ch PowerTrench® MOSFET - MicroFET-6
***r Electronics
Small Signal Field-Effect Transistor, 5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC
***el Electronic
DC DC Converters 1 (Unlimited) 1 4-SIP Module Through Hole Isolated Module ITE (Commercial) RFM (1W) -40°C~85°C 0.45Lx0.24W x 0.39 H 11.5mmx6.0mmx10.0mm DC DC CONVERTER 5V 1W
***nell
MOSFET, NN CH, 20V, MICROFET 2X2; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):37mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:700mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6
***rchild Semiconductor
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
***ure Electronics
ZXMN2F30FH Series N-Channel 20 V 0.045 Ohm Power MOSFET Surface Mount - SOT-23-3
***(Formerly Allied Electronics)
Diodes Inc ZXMN2F30FHTA N-channel MOSFET, 4.9 A, 20 V, 3-Pin SOT-23
***el Electronic
Trans MOSFET N-CH 20V 4.9A Automotive 3-Pin SOT-23 T/R
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 1.4 W
***ment14 APAC
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:960mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.9A; On State Resistance @ Vgs = 2.5V:65mohm; On State Resistance @ Vgs = 4.5V:45mohm; Package / Case:SOT-23; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Min:0.6V
***ure Electronics
Dual N/P-Channel 20 V 160/530 mOhm 4.2/7.7 nC 1.4 W Mosfet MICROFET 1.6x1.6
***r Electronics
Small Signal Field-Effect Transistor, 3.8A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET,NP CH,W,20V,MICROFET1.6X1.6; Module Configuration:Dual; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:1.4W
***rchild Semiconductor
This device is designed specifically as a single-package solution for a DC/DC switching MOSFET in cellular handset and other mobile applications. It features an independent N-channel & P-channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device.The MicroFET™ 1.6x1.6 thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
***Yang
Transistor MOSFET Array Dual N-CH 20V 3.8A 6-Pin MicroFET T/R - Tape and Reel
***emi
Dual N-Channel Power Trench® MOSFET 20V, 3.8A, 66mΩ
***nell
MOSFET, NN CH, 20V, 3.8A, MFET1.6X1.6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited
***rchild Semiconductor
This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.
***(Formerly Allied Electronics)
IRF7301PBF Dual N-channel MOSFET Transistor; 5.2 A; 20 V; 8-Pin SOIC
***itex
Transistor: 2xN-MOSFET; unipolar; 20V; 5.2A; 0.05ohm; 2W; -55+150 deg.C; SMD; SO8
***ure Electronics
Dual N-Channel 20 V 0.05 Ohm 20 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
MOSFET 2N-CH 20V 5.2A 8-SOIC / Trans MOSFET N-CH Si 20V 5.2A 8-Pin SOIC T/R
***id Electronics
Transistor MOSFET 2xN-Ch. 5,2A/20V SO8 IRF 7301 TRPBF
***roFlash
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, DUAL, NN, LOGIC, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 4.3A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 700mV
***trelec
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 5.7 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 50 / Gate-Source Voltage V = 12 / Fall Time ns = 51 / Rise Time ns = 42 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2
***icroelectronics
N-channel 20 V, 0.030 Ohm, 6 A, 2.7 V drive STripFET(TM) II Power MOSFET in SO-8 package
***ure Electronics
N Channel 20 V 40 mOhm SMT StripFET II Power MOSFET - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 20V 6A 8-Pin SO N T/R / MOSFET N-CH 20V 6A 8SOIC
***ark
MOSFET, N, SO-8; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:2.7V; Gate Source Threshold Voltage Max:600mV; Power Dissipation:2.5W RoHS Compliant: Yes
***nell
MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 2.7V; Threshold Voltage Vgs: 600mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 6A; Fall Time tf: 10ns; No. of Transistors: 1; On State Resistance @ Vgs = 4.5V: 40mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: (1+2+3)S,4G, (8+7+6+5)D; Pulse Current Idm: 24A; Rise Time: 33ns; Voltage Vds Typ: 20V; Voltage Vgs Max: 12V; Voltage Vgs Rds on Measurement: 2.7V
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
型號 製造商 描述 庫存 價格
FDMA1024NZ
DISTI # V72:2272_06337781		ON SemiconductorTrans MOSFET N-CH 20V 5A 6-Pin MLP EP T/R153
  • 100:$0.4383
  • 25:$0.6085
  • 10:$0.7437
  • 1:$0.8917
FDMA1024NZ
DISTI # V36:1790_06337781		ON SemiconductorTrans MOSFET N-CH 20V 5A 6-Pin MLP EP T/R0
  • 3000000:$0.2563
  • 1500000:$0.2565
  • 300000:$0.2748
  • 30000:$0.3059
  • 3000:$0.3110
FDMA1024NZ
DISTI # FDMA1024NZCT-ND		ON SemiconductorMOSFET 2N-CH 20V 5A 6-MICROFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		13980In Stock
  • 1000:$0.3807
  • 500:$0.4759
  • 100:$0.6020
  • 10:$0.7850
  • 1:$0.8900
FDMA1024NZ
DISTI # FDMA1024NZDKR-ND		ON SemiconductorMOSFET 2N-CH 20V 5A 6-MICROFET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		13980In Stock
  • 1000:$0.3807
  • 500:$0.4759
  • 100:$0.6020
  • 10:$0.7850
  • 1:$0.8900
FDMA1024NZ
DISTI # FDMA1024NZTR-ND		ON SemiconductorMOSFET 2N-CH 20V 5A 6-MICROFET
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		12000In Stock
  • 30000:$0.2926
  • 15000:$0.3003
  • 6000:$0.3119
  • 3000:$0.3350
DEV-09627
DISTI # 1568-1539-ND		SparkFun ElectronicsMINI FET SHIELD
RoHS: Compliant
Min Qty: 1
Container: Bulk		Limited Supply - Call
    FDMA1024NZ
    DISTI # 25632147    		ON SemiconductorTrans MOSFET N-CH 20V 5A 6-Pin MLP EP T/R54000
    • 3000:$0.3110
    FDMA1024NZ
    DISTI # 33101873    		ON SemiconductorTrans MOSFET N-CH 20V 5A 6-Pin MLP EP T/R6000
    • 3000:$0.2936
    FDMA1024NZ
    DISTI # 32708394    		ON SemiconductorTrans MOSFET N-CH 20V 5A 6-Pin MLP EP T/R153
    • 21:$0.8917
    FDMA1024NZ
    DISTI # FDMA1024NZ    		ON SemiconductorTrans MOSFET N-CH 20V 5A 6-Pin MicroFET T/R (Alt: FDMA1024NZ)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 0
    • 150000:$0.3607
    • 75000:$0.3667
    • 30000:$0.3793
    • 15000:$0.3929
    • 9000:$0.4074
    • 6000:$0.4231
    • 3000:$0.4400
    FDMA1024NZ
    DISTI # FDMA1024NZ    		ON SemiconductorTrans MOSFET N-CH 20V 5A 6-Pin MicroFET T/R - Tape and Reel (Alt: FDMA1024NZ)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.2709
    • 18000:$0.2779
    • 12000:$0.2819
    • 6000:$0.2849
    • 3000:$0.2869
    FDMA1024NZ
    DISTI # FDMA1024NZ    		ON SemiconductorTrans MOSFET N-CH 20V 5A 6-Pin MicroFET T/R - Bulk (Alt: FDMA1024NZ)
    RoHS: Compliant
    Min Qty: 1042
    Container: Bulk    		Americas - 0
    • 10420:$0.2959
    • 5210:$0.3029
    • 3126:$0.3069
    • 2084:$0.3109
    • 1042:$0.3129
    FDMA1024NZ
    DISTI # FDMA1024NZ    		ON SemiconductorTrans MOSFET N-CH 20V 5A 6-Pin MicroFET T/R (Alt: FDMA1024NZ)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.2729
    • 18000:€0.2939
    • 12000:€0.3179
    • 6000:€0.3469
    • 3000:€0.4249
    FDMA1024NZ
    DISTI # 73R3645    		ON SemiconductorTrans MOSFET N-CH 20V 5A 6-Pin MicroFET T/R - Product that comes on tape, but is not reeled (Alt: 73R3645)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$0.3660
    FDMA1024NZ
    DISTI # 07R8499    		ON SemiconductorMOSFET Transistor,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.037ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:700mV,No. of Pins:6Pins RoHS Compliant: Yes0
    • 24000:$0.2890
    • 9000:$0.3000
    • 1:$0.3110
    FDMA1024NZ
    DISTI # 73R3645    		ON SemiconductorMOSFET Transistor,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.037ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:700mV,No. of Pins:6Pins RoHS Compliant: Yes0
    • 1000:$0.3660
    • 500:$0.3950
    • 250:$0.4250
    • 100:$0.4540
    • 50:$0.5750
    • 25:$0.6960
    • 1:$0.8440
    FDMA1024NZ
    DISTI # 512-FDMA1024NZ    		ON SemiconductorMOSFET 20V Dual N-Channel PowerTrench
    RoHS: Compliant    		8199
    • 1:$0.8200
    • 10:$0.6820
    • 100:$0.4400
    • 1000:$0.3520
    • 3000:$0.2980
    • 9000:$0.2870
    • 24000:$0.2750
    FDMA1024NZFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC
    RoHS: Compliant    		306518
    • 1000:$0.3200
    • 500:$0.3300
    • 100:$0.3500
    • 25:$0.3600
    • 1:$0.3900
    FDMA1024NZFairchild Semiconductor Corporation5000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229VCCC90
    • 38:$0.3600
    • 8:$0.5400
    • 1:$0.7200
    FDMA1024NZ
    DISTI # 7396216P    		ON SemiconductorMOSFET N CHANNEL 20V 5A 6 PIN MICROFET, RL6400
    • 125:£0.2080
    FDMA1024NZFairchild Semiconductor Corporation 25
      FDMA1024NZ
      DISTI # 2101471      		ON SemiconductorMOSFET, NN CH, 20V, MICROFET 2X22500
      • 500:£0.2690
      • 250:£0.3060
      • 100:£0.3430
      • 10:£0.5830
      • 1:£0.7300
      FDMA1024NZ
      DISTI # 2101471RL      		ON SemiconductorMOSFET, NN CH, 20V, MICROFET 2X2
      RoHS: Compliant      		0
      • 9000:$0.4420
      • 3000:$0.4580
      • 1000:$0.5410
      • 100:$0.6770
      • 5:$1.0600
      FDMA1024NZ
      DISTI # 2101471      		ON SemiconductorMOSFET, NN CH, 20V, MICROFET 2X2
      RoHS: Compliant      		2391
      • 9000:$0.4420
      • 3000:$0.4580
      • 1000:$0.5410
      • 100:$0.6770
      • 5:$1.0600
      圖片 型號 描述
      nRF52832-QFAA-R

      Mfr.#: nRF52832-QFAA-R

      OMO.#: OMO-NRF52832-QFAA-R

      		 RF System on a Chip - SoC BLE ANT/ANT+ 2.4GHz SOC
      XC61CC2002MR-G

      Mfr.#: XC61CC2002MR-G

      OMO.#: OMO-XC61CC2002MR-G

      		 Supervisory Circuits LowQuiescent Current Voltage Detector
      FT232RL-REEL

      Mfr.#: FT232RL-REEL

      OMO.#: OMO-FT232RL-REEL

      		 USB Interface IC USB to Serial UART Enhanced IC SSOP-28
      FDMA1032CZ

      Mfr.#: FDMA1032CZ

      OMO.#: OMO-FDMA1032CZ

      		 MOSFET 20V Complementary PowerTrench MOSFET
      2450AT18B100E

      Mfr.#: 2450AT18B100E

      OMO.#: OMO-2450AT18B100E

      		 Antennas 2.45GHz ANTENNA
      CX2016DB32000D0WZRC1

      Mfr.#: CX2016DB32000D0WZRC1

      OMO.#: OMO-CX2016DB32000D0WZRC1

      		 Crystals AEC-Q200 32000kHz 8pF 2x1.6mm
      CSTNE8M00G550000R0

      Mfr.#: CSTNE8M00G550000R0

      OMO.#: OMO-CSTNE8M00G550000R0

      		 Resonators 8.0000MHz 33pF SMD CHP Resntr
      XC61CC2002MR-G

      Mfr.#: XC61CC2002MR-G

      OMO.#: OMO-XC61CC2002MR-G-TOREX-SEMICONDUCTOR

      		 Supervisory Circuits LowQuiescent Current Voltage Detecto
      FT232RL-REEL

      Mfr.#: FT232RL-REEL

      OMO.#: OMO-FT232RL-REEL-FUTURE-TECHNOLOGY-DEVICES-INTL

      		 USB Interface IC USB to Serial UART Enhanced IC SSOP-28
      CSTNE8M00G550000R0

      Mfr.#: CSTNE8M00G550000R0

      OMO.#: OMO-CSTNE8M00G550000R0-MURATA-ELECTRONICS

      		 Piezoelectric Ceramic Resonator 8.0000MHZ 33PF SMD
      可用性
      庫存:
      Available
      訂購:
      1991
      輸入數量:
      FDMA1024NZ的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$0.82
      US$0.82
      10
      US$0.68
      US$6.82
      100
      US$0.44
      US$44.00
      1000
      US$0.35
      US$352.00
      由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
      從...開始
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