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MRFE6S9125NR1

MRFE6S9125NR1
Mfr. #:
MRFE6S9125NR1
製造商:
NXP / Freescale
描述:
RF MOSFET Transistors HV6E 125W
生命週期:
製造商新產品
數據表:
MRFE6S9125NR1 數據表
交貨:
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ECAD Model:
更多信息:
MRFE6S9125NR1 更多信息
產品屬性
屬性值
製造商：
恩智浦
產品分類：
射頻 MOSFET 晶體管
RoHS：
E
晶體管極性：
N通道
技術：
矽
Vds - 漏源擊穿電壓：
- 500 mV, 66 V
獲得：
20.2 dB
輸出功率：
27 W
最低工作溫度：
- 65 C
最高工作溫度：
+ 150 C
安裝方式：
貼片/貼片
包裝/案例：
TO-270-4
打包：
捲軸
配置：
單身的
高度：
2.64 mm
長度：
17.58 mm
工作頻率：
880 MHz
系列：
MRFE6S9125N
寬度：
9.07 mm
品牌：
恩智浦/飛思卡爾
通道數：
1 Channel
頻道模式：
增強
濕氣敏感：
是的
產品類別：
射頻 MOSFET 晶體管
出廠包裝數量：
500
子類別：
MOSFET
Vgs - 柵源電壓：
- 0.5 V, 12 V
Vgs th - 柵源閾值電壓：
2.1 V
第 # 部分別名：
935314059528
單位重量：
0.058073 oz
Tags
MRFE6S912, MRFE6S91, MRFE6S9, MRFE6S, MRFE6, MRFE, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***v
    A***v
    RU

    Super

    2019-06-30
    U***n
    U***n
    KZ

    All leds came exactly 100 pieces, work, photopolymer curing, came quickly.

    2019-02-23
***escale Semiconductor
Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFET, 800 MHz, 27 W Avg., 28 V
***W
RF Power Transistor,865 to 960 MHz, 125 W, Typ Gain in dB is 20.2 @ 880 MHz, 28 V, LDMOS, SOT1736
***et Europe
Transistor RF FET N-CH 66V 865MHz to 960MHz 5-Pin TO-270WB T/R
***ical
Trans RF MOSFET N-CH 66V 5-Pin TO-270 WB EP T/R
***S
French Electronic Distributor since 1988
MRFE6S9125N Lateral N-Channel RF Power MOSFET
NXP's MRFE6S9125N Lateral N-Channel RF Power MOSFET is designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. NXP's MRFE6S9125N is characterized with series equivalent large-signal impedance parameters, and is internally matched for ease of use, it has an integrated ESD protection, and comes in a 225ºC capable plastic package. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.Learn More
型號 製造商 描述 庫存 價格
MRFE6S9125NR1
DISTI # 12029756		NXP SemiconductorsTrans RF MOSFET N-CH 66V 5-Pin TO-270 W T/R500
  • 2:$81.9500
MRFE6S9125NR1
DISTI # MRFE6S9125NR1CT-ND		NXP SemiconductorsFET RF 66V 880MHZ TO-270-4
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    MRFE6S9125NR1
    DISTI # MRFE6S9125NR1DKR-ND    		NXP SemiconductorsFET RF 66V 880MHZ TO-270-4
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      MRFE6S9125NR1
      DISTI # MRFE6S9125NR1TR-ND      		NXP SemiconductorsFET RF 66V 880MHZ TO-270-4
      RoHS: Compliant
      Min Qty: 500
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 500:$65.3852
      MRFE6S9125NR1
      DISTI # V36:1790_07204219      		NXP SemiconductorsTrans RF MOSFET N-CH 66V 5-Pin TO-270 W T/R0
        MRFE6S9125NR1
        DISTI # MRFE6S9125NR1        		Avnet, Inc.Trans MOSFET N-CH 66V 5-Pin TO-270 WB EP T/R (Alt: MRFE6S9125NR1)
        RoHS: Compliant
        Min Qty: 500
        Container: Tape and Reel        		Europe - 0
        • 5000:€56.9900
        • 3000:€61.0900
        • 2000:€65.7900
        • 1000:€68.3900
        • 500:€71.1900
        MRFE6S9125NR1
        DISTI # MRFE6S9125NR1        		Avnet, Inc.Trans MOSFET N-CH 66V 5-Pin TO-270 WB EP T/R - Tape and Reel (Alt: MRFE6S9125NR1)
        RoHS: Compliant
        Min Qty: 500
        Container: Reel        		Americas - 0
        • 5000:$62.4900
        • 3000:$63.6900
        • 2000:$66.0900
        • 1000:$68.7900
        • 500:$71.5900
        MRFE6S9125NR1
        DISTI # 51M5653        		NXP SemiconductorsSINGLE N-CDMA, GSM EDGE LATERAL N-CHANNEL RF POWER MOSFET, 800 MHZ, 27 W AVG., 28 V TR0
        • 1000:$58.5100
        • 500:$59.4900
        • 1:$61.4600
        MRFE6S9125NR1
        DISTI # 841-MRFE6S9125NR1        		NXP SemiconductorsRF MOSFET Transistors HV6E 125W
        RoHS: Compliant        		0
        • 500:$63.4200
        MRFE6S9125NR1
        DISTI # MRFE6S9125NR1        		NXP SemiconductorsRF POWER TRANSISTOR
        RoHS: Compliant        		500
        • 500:$73.7500
        圖片 型號 描述
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        MRFE6S9200HSR5

        Mfr.#: MRFE6S9200HSR5

        OMO.#: OMO-MRFE6S9200HSR5

        		 RF MOSFET Transistors HV6E 900MHZ 200W NI880HS
        MRFE6S9201HSR3

        Mfr.#: MRFE6S9201HSR3

        OMO.#: OMO-MRFE6S9201HSR3

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        MRFE6S9135HR5

        Mfr.#: MRFE6S9135HR5

        OMO.#: OMO-MRFE6S9135HR5

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        MRFE6S9125NB

        Mfr.#: MRFE6S9125NB

        OMO.#: OMO-MRFE6S9125NB-1190

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        OMO.#: OMO-MRFE6S9205HS-1190

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        MRFE6S8046NR1

        Mfr.#: MRFE6S8046NR1

        OMO.#: OMO-MRFE6S8046NR1-NXP-SEMICONDUCTORS

        		 FET RF 66V 894MHZ TO-270-4
        MRFE6S9135HSR5

        Mfr.#: MRFE6S9135HSR5

        OMO.#: OMO-MRFE6S9135HSR5-NXP-SEMICONDUCTORS

        		 FET RF 66V 940MHZ NI-880S
        可用性
        庫存:
        Available
        訂購:
        1000
        輸入數量:
        MRFE6S9125NR1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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