NSBC123EPDXV6T1G

NSBC123EPDXV6T1G
Mfr. #:
NSBC123EPDXV6T1G
製造商:
ON Semiconductor
描述:
Bipolar Transistors - Pre-Biased SSP SOT563 DUAL 2.2/2.2K
生命週期:
製造商新產品
數據表:
NSBC123EPDXV6T1G 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSBC123EPDXV6T1G DatasheetNSBC123EPDXV6T1G Datasheet (P4-P6)NSBC123EPDXV6T1G Datasheet (P7)
ECAD Model:
產品屬性
屬性值
製造商:
安森美半導體
產品分類:
雙極晶體管 - 預偏置
RoHS:
Y
配置:
雙重的
晶體管極性:
NPN, PNP
典型輸入電阻:
2.2 kOhms
典型電阻比:
1
安裝方式:
貼片/貼片
包裝/案例:
SOT-563-6
DC 集電極/基極增益 hfe 最小值:
8
集電極-發射極電壓 VCEO 最大值:
50 V
連續集電極電流:
100 mA
峰值直流集電極電流:
100 mA
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
系列:
NSBC123EPDXV6
打包:
捲軸
高度:
0.55 mm
長度:
1.6 mm
寬度:
1.2 mm
品牌:
安森美半導體
通道數:
2 Channel
產品類別:
BJT - 雙極晶體管 - 預偏置
出廠包裝數量:
4000
子類別:
晶體管
單位重量:
0.000106 oz
Tags
NSBC123E, NSBC123, NSBC12, NSBC, NSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-563 T/R
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***emi
50V Dual Bipolar Digital Transistor
***ark
Brt Transistor, 50V, 2.2K/2.2K, Sot563; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
***emi
50V Dual PNP Bipolar Digital Transistor
***ponent Stockers USA
100 mA 50 V 2 CHANNEL PNP Si SMALL SIGNAL TRANSISTOR
***ark
Brt Transistor, 50V, 2.2K/2.2K, Sot-563; Transistor Polarity:dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
***emi
50V Dual NPN Bipolar Digital Transistor
***Yang
Trans Digital BJT NPN 50V 0.1A 6-Pin SOT-563 T/R - Tape and Reel
***ponent Stockers USA
100 mA 50 V 2 CHANNEL NPN Si SMALL SIGNAL TRANSISTOR
***ark
Brt Transistor, 50V, 2.2K/2.2K, Sot563; Transistor Polarity:dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes
***ical
Trans Digital BJT NPN/PNP 50V 100mA 500mW 6-Pin SOT-563 T/R
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ure Electronics
Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital
***emi
Complementary Bipolar Digital Transistor (BRT)
***ment14 APAC
Transistor, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous
***ark
Brt Transistor, 50V, 47K/10Kohm, Sot-553; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm Rohs Compliant: Yes
***nell
TRANS, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.21(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***th Star Micro
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMD4DXV6T1 series two complementary BRT devices are housed in the SOT-563 package which is ideal for low power surface mount applications where board space is at a premium.
型號 製造商 描述 庫存 價格
NSBC123EPDXV6T1G
DISTI # NSBC123EPDXV6T1GOS-ND
ON SemiconductorTRANS PREBIAS NPN/PNP SOT563
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
Limited Supply - Call
    NSBC123EPDXV6T1G
    DISTI # NSBC123EPDXV6T1G
    ON SemiconductorTrans Digital BJT NPN/PNP 50V 0.1A 6-Pin SOT-563 T/R - Tape and Reel (Alt: NSBC123EPDXV6T1G)
    RoHS: Compliant
    Min Qty: 8000
    Container: Reel
    Americas - 0
    • 8000:$0.0779
    • 16000:$0.0769
    • 24000:$0.0759
    • 40000:$0.0749
    • 80000:$0.0739
    NSBC123EPDXV6T1G
    DISTI # 42K2335
    ON SemiconductorBRT TRANSISTOR, 50V, 2.2K/2.2K, SOT563,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:2.2kohm,Base-Emitter Resistor R2:2.2kohm,Resistor Ratio, R1 / R2:1(Ratio) RoHS Compliant: Yes0
    • 1:$0.1200
    NSBC123EPDXV6T1G
    DISTI # 49X8965
    ON SemiconductorBRT TRANSISTOR, 50V, 2.2K/2.2K, SOT563,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:2.2kohm,Base-Emitter Resistor R2:2.2kohm,Resistor Ratio, R1 / R2:1(Ratio) RoHS Compliant: Yes0
    • 1:$0.4030
    • 25:$0.3090
    • 50:$0.2580
    • 100:$0.2160
    • 250:$0.1820
    • 500:$0.1550
    • 1000:$0.1260
    • 2500:$0.1070
    NSBC123EPDXV6T1G
    DISTI # 863-NSBC123EPDXV6T1G
    ON SemiconductorBipolar Transistors - Pre-Biased SSP SOT563 DUAL 2.2/2.2K
    RoHS: Compliant
    0
    • 1:$0.3500
    • 10:$0.2660
    • 100:$0.1440
    • 1000:$0.1080
    • 4000:$0.0930
    • 8000:$0.0870
    • 24000:$0.0800
    • 48000:$0.0770
    • 100000:$0.0740
    NSBC123EPDXV6T1GON Semiconductor 
    RoHS: Not Compliant
    100000
    • 1000:$0.0900
    • 100:$0.1000
    • 500:$0.1000
    • 1:$0.1100
    • 25:$0.1100
    圖片 型號 描述
    NSBC123EDXV6T1G

    Mfr.#: NSBC123EDXV6T1G

    OMO.#: OMO-NSBC123EDXV6T1G

    Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
    NSBC123EPDXV6T1G

    Mfr.#: NSBC123EPDXV6T1G

    OMO.#: OMO-NSBC123EPDXV6T1G

    Bipolar Transistors - Pre-Biased SSP SOT563 DUAL 2.2/2.2K
    NSBC123EF3T5G

    Mfr.#: NSBC123EF3T5G

    OMO.#: OMO-NSBC123EF3T5G

    Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR (B
    NSBC123EPDXV6T1

    Mfr.#: NSBC123EPDXV6T1

    OMO.#: OMO-NSBC123EPDXV6T1

    Bipolar Transistors - Pre-Biased 100mA Complementary
    NSBC123EDXV6T1

    Mfr.#: NSBC123EDXV6T1

    OMO.#: OMO-NSBC123EDXV6T1-ON-SEMICONDUCTOR

    TRANS 2NPN PREBIAS 0.5W SOT563
    NSBC123EDXV6T1G

    Mfr.#: NSBC123EDXV6T1G

    OMO.#: OMO-NSBC123EDXV6T1G-ON-SEMICONDUCTOR

    TRANS 2NPN PREBIAS 0.5W SOT563
    NSBC123EPDXV6T1

    Mfr.#: NSBC123EPDXV6T1

    OMO.#: OMO-NSBC123EPDXV6T1-ON-SEMICONDUCTOR

    TRANS PREBIAS NPN/PNP SOT563
    NSBC123EF3T5G

    Mfr.#: NSBC123EF3T5G

    OMO.#: OMO-NSBC123EF3T5G-ON-SEMICONDUCTOR

    Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR (B
    NSBC123EPDXV6T1G

    Mfr.#: NSBC123EPDXV6T1G

    OMO.#: OMO-NSBC123EPDXV6T1G-ON-SEMICONDUCTOR

    Bipolar Transistors - Pre-Biased SSP SOT563 DUAL 2.2/2.2K
    可用性
    庫存:
    Available
    訂購:
    1991
    輸入數量:
    NSBC123EPDXV6T1G的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$0.35
    US$0.35
    10
    US$0.27
    US$2.66
    100
    US$0.14
    US$14.40
    1000
    US$0.11
    US$108.00
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