STGWT30V60DF

Mfr. #:: STGWT30V60DF
製造商:: STMicroelectronics
描述:: IGBT Transistors 600V 30A High Speed Trench Gate IGBT
生命週期:: 製造商新產品
數據表:: STGWT30V60DF 數據表
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更多信息:: STGWT30V60DF 更多信息 STGWT30V60DF Product Details

產品屬性
屬性值

製造商: 意法半導體

產品分類: IGBT - 單

系列: 600-650V IGBTs

打包: 管子

單位重量: 0.238311 oz

安裝方式: 通孔

包裝盒: TO-3P-3, SC-65-3

輸入類型: 標準

安裝型: 通孔

供應商-設備-包: TO-3P

配置: 單身的

最大功率: 258W

反向恢復時間trr: 53ns

電流收集器 Ic-Max: 60A

電壓收集器發射極擊穿最大值: 600V

IGBT型: 海溝場停止

電流收集器脈衝Icm: 120A

Vce-on-Max-Vge-Ic: 2.3V @ 15V, 30A

開關能源: 383μJ (on), 233μJ (off)

柵極電荷: 163nC

Td-on-off-25°C: 45ns/189ns

測試條件: 400V, 30A, 10 Ohm, 15V

鈀功耗: 258 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

集電極-發射極-電壓-VCEO-Max: 600 V

集電極-發射極-飽和-電壓: 2.35 V

25-C 時的連續集電極電流: 60 A

柵極-發射極-漏電流: 250 nA

最大柵極發射極電壓: 20 V

Tags: STGWT30V, STGWT30, STGWT3, STGWT, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGWT30V60DF 描述

***ical: Trans IGBT Chip N-CH 600V 60A 181000mW 3-Pin(3+Tab) TO-3P Tube

***p One Stop Global: Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-3P Tube

***et Europe: Trans IGBT Chip N-CH 600V 60A 3-Pin TO-3P

***Components: IGBT Trench gate,600V 30A/100 deg,TO-3P

***i-Key: IGBT 600V 60A 258W TO3P-3

***et: STMICROELECTRONICS STGWT30V60DF

***ark: Ptd High Voltage

STGWT30V60DF 更多信息

IGBT V Series: STMicroelectronics 600V trench-gate field-stop very high speed IGBT V series feature the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz) and simplified thermal and EMI design.

Market price

型號	製造商	描述	庫存	價格
STGWT30V60DF DISTI # 497-13770-5-ND	STMicroelectronics	IGBT 600V 60A 258W TO3P-3 RoHS: Compliant Min Qty: 1 Container: Tube	106In Stock	1020:$1.9727 510:$2.3391 120:$2.7477 30:$3.1703 1:$3.7300
STGWT30V60DF DISTI # STGWT30V60DF	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin TO-3P - Rail/Tube (Alt: STGWT30V60DF) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	600:$1.7900 1200:$1.6900 1800:$1.5900 3000:$1.4900 6000:$1.4900
STGWT30V60DF DISTI # 511-STGWT30V60DF	STMicroelectronics	IGBT Transistors 600V 30A High Speed Trench Gate IGBT RoHS: Compliant	269	1:$3.5500 10:$3.0200 100:$2.6100 250:$2.4800 500:$2.2200 1000:$1.8700 2500:$1.7800
STGWT30V60DF DISTI # 7917661P	STMicroelectronics	IGBT TRENCH GATE 600V 30A/100 DEG TO-3P, TU	230	25:£1.0600

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