MJE5851G

Mfr. #:: MJE5851G
製造商:: ON Semiconductor
描述:: Bipolar Transistors - BJT 8A 350V 80W PNP
生命週期:: 製造商新產品
數據表:: MJE5851G 數據表
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HTML Datasheet:: MJE5851G Datasheet MJE5851G Datasheet (P4-P6)MJE5851G Datasheet (P7-P8)
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產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: 雙極晶體管 - BJT

RoHS：: Y

安裝方式：: 通孔

包裝/案例：: TO-220-3

晶體管極性：: PNP

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 350 V

集電極-基極電壓 VCBO：: 400 V

發射極基極電壓 VEBO：: 6 V

集電極-發射極飽和電壓：: 2 V

最大直流集電極電流：: 8 A

最低工作溫度：: - 65 C

最高工作溫度：: + 150 C

系列：: MJE5851

高度：: 15.75 mm

長度：: 10.53 mm

打包：: 管子

寬度：: 4.83 mm

品牌：: 安森美半導體

連續集電極電流：: 8 A

DC 集電極/基極增益 hfe 最小值：: 15

Pd - 功耗：: 80 W

產品類別：: BJT - 雙極晶體管

出廠包裝數量：: 50

子類別：: 晶體管

單位重量：: 0.211644 oz

Tags: MJE5851, MJE58, MJE5, MJE

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MJE5851G 描述

***enic: 350V 80W 8A 5@5A5V PNP 5V@8A3A -65¡Í~+150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS

***Yang: Trans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***emi: 8.0 A, 350 V PNP Bipolar Power Transistor

***r Electronics: Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***ment14 APAC: BIPOLAR TRANSISTOR, PNP, -350V, TO-220;

***th Star Micro: The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:

***emi: 8.0 A, 300 V PNP Bipolar Power Transistor

***r Electronics: Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***nell: MJE5850, SINGLE BIPOLAR TRANSISTORS;

***el Electronic: RES SMD 7.68K OHM 1% 1/2W 1206

***roFlash: ON Semi MJE5852G PNP High Voltage Bipolar Transistor; 8 A; 400 V; 3-Pin TO-220AB

***ical: Trans GP BJT PNP 400V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: MJE Series 400 V 8 A SWITCHMODE Series PNP Silicon Power Transistor - TO-220AB

***emi: 8.0 A, 400 V PNP Bipolar Power Transistor

***SIT Distribution GmbH: Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***enic: 400V 80W 8A 5@5A5V 5V@8A3A PNP -65¡Í~+150¡Í@(Tj) TO-220(TO-220-3) Bipolar Transistors - BJT ROHS

***nell: TRANSISTOR, PNP, TO-220AB; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Current: 8A; DC Current Gain hFE: 15hFE; Transistor Case Style:

***ark: RF TRANSISTOR, PNP, -400V, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage Max:400V; Continuous Collector Current:8A; Power Dissipation:80W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes

***th Star Micro: The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:

***enic: 300V 80W 8A PNP TO-220(TO-220-3) Bipolar Transistors - BJT ROHS

***ical: Trans GP BJT PNP 300V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: MJE Series 300 V 8 A SWITCHMODE Series PNP Silicon Power Transistor - TO-220AB

***emi: 8.0 A, 300 V PNP Bipolar Power Transistor

***r Electronics: Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***(Formerly Allied Electronics): Transistor, Bipolar, Si, PNP, Power, VCEO 300VDC, IC 8A, PD 80W, TO-220AB, hFE 5 | ON Semiconductor MJE5850G

***nell: TRANSISTOR, PNP, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Cu; Available until stocks are exhausted Alternative available

***th Star Micro: The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:

Market price

型號	製造商	描述	庫存	價格
MJE5851G DISTI # V99:2348_07278929	ON Semiconductor	Trans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	390	5000:$1.2130 2500:$1.2200 1000:$1.2580 500:$1.3110 100:$1.5049 10:$1.9280 1:$2.0630
MJE5851G DISTI # MJE5851GOS-ND	ON Semiconductor	TRANS PNP 350V 8A TO220AB RoHS: Compliant Min Qty: 1 Container: Tube	350In Stock	1000:$1.4992 500:$1.8094 100:$2.2023 50:$2.5848 1:$3.0500
MJE5851G DISTI # 26621158	ON Semiconductor	Trans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	4000	400:$1.2496
MJE5851G DISTI # 27149027	ON Semiconductor	Trans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	390	100:$1.5200 10:$1.9250 5:$2.0200
MJE5851G DISTI # MJE5851G	ON Semiconductor	Trans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: MJE5851G) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 1072	1:$1.7900 10:$1.6900 25:$1.6900 50:$1.6900 100:$1.2900 500:$1.2900 1000:$1.2900
MJE5851G DISTI # 42K1299	ON Semiconductor	BIPOLAR TRANSISTOR, PNP, -350V, TO-220,Transistor Polarity:PNP,Collector Emitter Voltage V(br)ceo:350V,Transition Frequency ft:-,Power Dissipation Pd:80W,DC Collector Current:-8A,DC Current Gain hFE:15hFE,No. of Pins:3Pins RoHS Compliant: Yes	0	1:$3.1600 10:$2.5700 25:$2.0800 100:$2.0200 250:$1.8400 500:$1.5300 1000:$1.4300 2500:$1.3800
MJE5851G DISTI # 863-MJE5851G	ON Semiconductor	Bipolar Transistors - BJT 8A 350V 80W PNP RoHS: Compliant	402	1:$2.9000 10:$2.4700 100:$1.9700 500:$1.7300 1000:$1.4300
MJE5852G DISTI # 863-MJE5852G	ON Semiconductor	Bipolar Transistors - BJT 8A 400V 80W PNP RoHS: Compliant	380	1:$2.7200 10:$2.3100 100:$1.8500 500:$1.6200 1000:$1.3400
MJE5851 DISTI # 863-MJE5851	ON Semiconductor	Bipolar Transistors - BJT 8A 350V 80W PNP RoHS: Not compliant	0
MJE5851G	ON Semiconductor	RoHS: Not Compliant	14	1000:$1.4300 500:$1.5100 100:$1.5700 25:$1.6400 1:$1.7700
MJE5851G DISTI # C1S541900354298	ON Semiconductor	Trans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	390	100:$1.5200 10:$1.9250 1:$2.0200

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