SI4662DY-T1-E3

Mfr. #:: SI4662DY-T1-E3
製造商:: Vishay / Siliconix
描述:: RF Bipolar Transistors MOSFET 30V 18.6A 6.25W
生命週期:: 製造商新產品
數據表:: SI4662DY-T1-E3 數據表
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更多信息:: SI4662DY-T1-E3 更多信息

產品屬性
屬性值

製造商: 威夏

產品分類: 集成電路芯片

打包: 捲軸

部分別名: SI4662DY-E3

單位重量: 0.006596 oz

安裝方式: 貼片/貼片

包裝盒: SOIC-Narrow-8

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 3 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 15 ns

上升時間: 50 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 12.9 A

Vds-漏-源-擊穿電壓: 30 V

Rds-On-Drain-Source-Resistance: 10 mOhms

晶體管極性: N通道

典型關斷延遲時間: 26 ns

典型開啟延遲時間: 21 ns

通道模式: 增強

Tags: SI4662, SI466, SI46, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4662DY-T1-E3 更多信息

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

型號	製造商	描述	庫存	價格
SI4662DY-T1-E3 DISTI # 781-SI4662DY-E3	Vishay Intertechnologies	MOSFET 30V 18.6A 6.25W RoHS: Compliant	0	2500:$0.4200 5000:$0.3990 10000:$0.3850

相關產品

圖片	型號	描述
	Mfr.#: SI4662DY-T1-E3 OMO.#: OMO-SI4662DY-T1-E3	MOSFET 30V 18.6A 6.25W
	Mfr.#: SI4662DY-T1-GE3 OMO.#: OMO-SI4662DY-T1-GE3	MOSFET 30V 18.6A 6.25W 10mohm @ 10V
	Mfr.#: SI4662DY-T1-GE3 OMO.#: OMO-SI4662DY-T1-GE3-317	RF Bipolar Transistors MOSFET 30V 18.6A 6.25W 10mohm @ 10V
	Mfr.#: SI4662DY-T1-E3 OMO.#: OMO-SI4662DY-T1-E3-317	RF Bipolar Transistors MOSFET 30V 18.6A 6.25W
	Mfr.#: SI4662DY-T1-E3 GE3 OMO.#: OMO-SI4662DY-T1-E3-GE3-1190	全新原裝