IRFR4105ZTRPBF

Mfr. #:: IRFR4105ZTRPBF
製造商:: Infineon Technologies
描述:: MOSFET MOSFT 55V 30A 24.5mOhm 18nC Qg
生命週期:: 製造商新產品
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: TO-252-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 55 V

Id - 連續漏極電流：: 30 A

Rds On - 漏源電阻：: 24.5 mOhms

Vgs th - 柵源閾值電壓：: 4 V

Qg - 門電荷：: 27 nC

最高工作溫度：: + 175 C

Pd - 功耗：: 48 W

配置：: 單身的

打包：: 捲軸

高度：: 2.3 mm

長度：: 6.5 mm

晶體管類型：: 1 N-Channel

寬度：: 6.22 mm

品牌：: 英飛凌科技

正向跨導 - 最小值：: 16 S

秋季時間：: 24 ns

產品類別：: MOSFET

上升時間：: 40 ns

出廠包裝數量：: 2000

子類別：: MOSFET

第 # 部分別名：: SP001557018

單位重量：: 0.139332 oz

Tags: IRFR4105ZTRP, IRFR4105ZT, IRFR4105Z, IRFR4105, IRFR41, IRFR4, IRFR, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFR4105ZTRPBF 描述

***ark: Mosfet Transistor, N Channel, 30 A, 55 V, 24.5 Mohm, 10 V, 4 V Rohs Compliant: Yes

***ure Electronics: Single N-Channel 55 V 24.5 mOhm 18 nC HEXFET® Power Mosfet - TO-252AA

***(Formerly Allied Electronics): MOSFET, Power,N-Ch,VDSS 55V,RDS(ON) 19 Milliohms,ID 30A,D-Pak (TO-252AA),PD 48W

*** Source Electronics: Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A) | MOSFET N-CH 55V 30A DPAK

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***icontronic: Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC

***nell: MOSFET, N, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0245ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation P

***ineon SCT: Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

***ure Electronics: Single N-Channel 55 V 24.5 mOhm 27 nC Automotive HEXFET® Power Mosfet - DPAK

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

***ment14 APAC: MOSFET,N CH,55V,30A,DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:48W; Voltage Vgs Max:20V

***ineon SCT: 55V, N-Ch, 23 mΩ max, Automotive MOSFET, DPAK, OptiMOS™, PG-TO252-3, RoHS

***roFlash: Power Field-Effect Transistor, 30A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ineon: Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

***ure Electronics: N-Channel 60 V 21 mOhm Surface Mount PowerTrench Mosfet TO-252-3

*** Source Electronics: Trans MOSFET N-CH 60V 38A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 8.5A D-PAK

***emi: N-Channel PowerTrench® MOSFET, 38A, 21mΩ

***r Electronics: Power Field-Effect Transistor, 38A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: MOSFET; Transistor Type:MOSFET; Continuous Drain Current, Id:8.5A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):0.017ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.4V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

***emi: N-Channel PowerTrench® MOSFET, 60V, 36A, 26mΩ

***ical: Trans MOSFET N-CH 60V 7A Automotive 3-Pin(2+Tab) TO-252AA T/R

*** Electronic Components: MOSFET 60V N-CHAN PwrTrench 60V 36A 26mOhm

***r Electronics: Power Field-Effect Transistor, 7A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***or: MOSFET N-CH 60V 7A/36A TO252AA

***ark: NMOS DPAK 60V 26 MOHM / REEL ROHS COMPLIANT: YES

***el Electronic: SENSOR PROX INDUCTIVE 9.6MM CYL

***r Electronics: Power Field-Effect Transistor, 36A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET

***icroelectronics: P-channel 40 V, 0.0175 Ohm typ., 36 A STripFET F6 in a DPAK package

***nell: MOSFET, P-CH, -40V, -36A, 60W, TO-252; Transistor Polarity: P Channel; Continuous Drain Current Id: -36A; Drain Source Voltage Vds: -40V; On Resistance Rds(on): 0.0175ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.5V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET F6 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***(Formerly Allied Electronics): MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.045Ohm; ID 27A; D-Pak (TO-252AA); PD 68W

***ure Electronics: Single N-Channel 55V 0.045 Ohm 34 nC HEXFET® Power Mosfet - TO-252AA

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:27A; On Resistance Rds(On):0.045Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

***ure Electronics: Single N-Channel 60 V 0.022 Ohms Surface Mount Power Mosfet - TO-252

***p One Stop: Trans MOSFET N-CH 60V 25A Automotive 3-Pin(2+Tab) DPAK

***nell: MOSFET,N CH,W DIODE,60V,25A,TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 62W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Voltage Vgs Max: 20V

Market price

型號	製造商	描述	庫存	價格
IRFR4105ZTRPBF DISTI # V36:1790_13891653	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2000	20000000:$0.3073 200000:$0.3386 2000:$0.4050
IRFR4105ZTRPBF DISTI # V72:2272_13891653	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	999	500:$0.4767 250:$0.5094 100:$0.5263 25:$0.6383 10:$0.6410 1:$0.7197
IRFR4105ZTRPBF DISTI # IRFR4105ZTRPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 55V 30A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	11551In Stock	1000:$0.5212 500:$0.6458 100:$0.8172 10:$1.0200 1:$1.1400
IRFR4105ZTRPBF DISTI # IRFR4105ZTRPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 55V 30A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	11551In Stock	1000:$0.5212 500:$0.6458 100:$0.8172 10:$1.0200 1:$1.1400
IRFR4105ZTRPBF DISTI # IRFR4105ZTRPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 55V 30A DPAK RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	10000In Stock	2000:$0.4758
IRFR4105ZTRPBF DISTI # 31087049	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	6000	2000:$0.4752
IRFR4105ZTRPBF DISTI # 30611315	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2000	1000:$0.4552 500:$0.5177 100:$0.6120 50:$0.7471 23:$1.1220
IRFR4105ZTRPBF DISTI # 31016500	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	999	500:$0.4767 250:$0.5094 100:$0.5263 25:$0.6383 23:$0.6410
IRFR4105ZTRPBF DISTI # IRFR4105ZTRPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) DPAK T/R (Alt: IRFR4105ZTRPBF) RoHS: Compliant Min Qty: 2000 Container: Tape and Reel	Asia - 0
IRFR4105ZTRPBF DISTI # IRFR4105ZTRPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR4105ZTRPBF) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0	2000:$0.3169 4000:$0.3049 8000:$0.2939 12000:$0.2839 20000:$0.2789
IRFR4105ZTRPBF DISTI # SP001557018	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) DPAK T/R (Alt: SP001557018) RoHS: Compliant Min Qty: 2000 Container: Tape and Reel	Europe - 0	2000:€0.3769 4000:€0.3089 8000:€0.2829 12000:€0.2609 20000:€0.2419
IRFR4105ZTRPBF DISTI # 13AC9140	Infineon Technologies AG	MOSFET, N-CH, 55V, 30A, TO-252AA,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes	917	1:$1.1500 10:$0.9910 25:$0.9190 50:$0.8480 100:$0.7760 250:$0.7340 500:$0.6920 1000:$0.5590
IRFR4105ZTRPBF DISTI # 70019018	Infineon Technologies AG	IRFR4105ZTRPBF N-channel MOSFET Transistor,30 A,55 V,3-Pin TO-252AA RoHS: Compliant	0	2000:$1.1300
IRFR4105ZTRPBF DISTI # 942-IRFR4105ZTRPBF	Infineon Technologies AG	MOSFET MOSFT 55V 30A 24.5mOhm 18nC Qg RoHS: Compliant	5807	1:$0.9700 10:$0.8240 100:$0.6330 500:$0.5590 1000:$0.4410 2000:$0.3920 10000:$0.3770
IRFR4105ZTRPBF	International Rectifier		943
IRFR4105ZTRPBF DISTI # 8274066P	Infineon Technologies AG	HEXFET N-CH MOSFET 30A 55V DPAK, RL	3985	100:£0.4750 500:£0.4060 1000:£0.3180 2000:£0.2940
IRFR4105ZTRPBF DISTI # IRFR4105ZPBF-GURT	Infineon Technologies AG	N-Ch 55V 30A 48W 0,0245R TO252AA RoHS: Compliant	3450	50:€0.3015 100:€0.2615 500:€0.2415 3000:€0.2325
IRFR4105ZTRPBF DISTI # C1S322000493555	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2000	2000:$0.3530 1000:$0.3570 500:$0.4060 100:$0.4800 50:$0.5860 10:$0.8800
IRFR4105ZTRPBF DISTI # C1S322000493564	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	999	250:$0.5094 100:$0.5263 25:$0.6383 10:$0.6410
IRFR4105ZTRPBF DISTI # 2725969	Infineon Technologies AG	MOSFET, N-CH, 55V, 30A, TO-252AA RoHS: Compliant	917	1:$1.2500 10:$1.0900 100:$0.8910 500:$0.7520 1000:$0.6510
IRFR4105ZTRPBF DISTI # XSFP00000108891	Infineon Technologies AG	RoHS: Compliant	2692	2000:$0.6000 2692:$0.5455
IRFR4105ZTRPBF DISTI # 2725969	Infineon Technologies AG	MOSFET, N-CH, 55V, 30A, TO-252AA RoHS: Compliant	957	5:£0.6300 25:£0.5570 100:£0.4840 250:£0.4490 500:£0.4140

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