IRF40DM229

Mfr. #:: IRF40DM229
製造商:: Infineon Technologies
描述:: MOSFET
生命週期:: 製造商新產品
數據表:: IRF40DM229 數據表
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HTML Datasheet:: IRF40DM229 Datasheet IRF40DM229 Datasheet (P4-P6)IRF40DM229 Datasheet (P7-P9)IRF40DM229 Datasheet (P10-P12)
ECAD Model:
更多信息:: IRF40DM229 更多信息

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: 直接場效應晶體管

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 40 V

Id - 連續漏極電流：: 159 A

Rds On - 漏源電阻：: 1.4 mOhms

Vgs th - 柵源閾值電壓：: 2.2 V

Vgs - 柵源電壓：: 20 V

Qg - 門電荷：: 161 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 83 W

配置：: 單身的

頻道模式：: 增強

商品名：: 強IRFET

打包：: 捲軸

晶體管類型：: 1 N-Channel

品牌：: 英飛凌科技

正向跨導 - 最小值：: 87 S

秋季時間：: 54 ns

產品類別：: MOSFET

上升時間：: 66 ns

出廠包裝數量：: 4800

子類別：: MOSFET

典型關斷延遲時間：: 54 ns

典型的開啟延遲時間：: 16 ns

第 # 部分別名：: SP001576692

Tags: IRF40, IRF4, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF40DM229 描述

***et: Trans MOSFET N-CH 40V 159A 8-pin MF T/R 4.8k

***i-Key: MOSFET N-CH 40V 159A ISOMETRICMF

***ineon: 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MF Package | Benefits: Improved Gate, Avalanche and Dynamic dv/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dv/dt and di/dt Capability; Lead-Free, RoHS Compliant

IRF40DM229 更多信息

StrongIRFET™ Power MOSFETs: Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability.

Market price

型號	製造商	描述	庫存	價格
IRF40DM229 DISTI # V72:2272_17076761	Infineon Technologies AG	N-Channel Power MOSFET	4390	3000:$1.1283 1000:$1.2072 500:$1.4060 250:$1.5727 100:$1.5907 25:$1.8858 10:$1.9086 1:$2.1612
IRF40DM229 DISTI # IRF40DM229CT-ND	Infineon Technologies AG	MOSFET N-CH 40V 159A ISOMETRICMF RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4851In Stock	1000:$1.0843 500:$1.3086 100:$1.6825 10:$2.0940 1:$2.3200
IRF40DM229 DISTI # IRF40DM229DKR-ND	Infineon Technologies AG	MOSFET N-CH 40V 159A ISOMETRICMF RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4851In Stock	1000:$1.0843 500:$1.3086 100:$1.6825 10:$2.0940 1:$2.3200
IRF40DM229 DISTI # IRF40DM229TR-ND	Infineon Technologies AG	MOSFET N-CH 40V 159A ISOMETRICMF RoHS: Compliant Min Qty: 4800 Container: Tape & Reel (TR)	4800In Stock	4800:$0.9438
IRF40DM229 DISTI # 31008279	Infineon Technologies AG	N-Channel Power MOSFET	4800	4800:$0.9472
IRF40DM229 DISTI # 26196751	Infineon Technologies AG	N-Channel Power MOSFET	4390	3000:$1.1283 1000:$1.2072 500:$1.4060 250:$1.5727 100:$1.5907 25:$1.8858 10:$1.9086 8:$2.1612
IRF40DM229 DISTI # IRF40DM229	Infineon Technologies AG	Trans MOSFET N-CH 40V 159A 8-pin MF T/R 4.8k - Tape and Reel (Alt: IRF40DM229) RoHS: Compliant Min Qty: 4800 Container: Reel	Americas - 0	4800:$0.9509 9600:$0.9159 19200:$0.8829 28800:$0.8529 48000:$0.8379
IRF40DM229 DISTI # 726-IRF40DM229	Infineon Technologies AG	MOSFET RoHS: Compliant	3774	1:$2.9100 10:$2.4700 100:$1.9800 500:$1.7300 1000:$1.4400 2500:$1.3400 4800:$1.2900
IRF40DM229 DISTI # C1S322000660023	Infineon Technologies AG	N-Channel Power MOSFET RoHS: Compliant	4800	4800:$1.0100

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