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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| RF1S60P03SM9A | Intersil Corporation | 32 | ||
| RF1S60P03SM | Harris Semiconductor | MOSFET Transistor, P-Channel, TO-263AB | 15 | |
| RF1S60P03SM9A | Harris Semiconductor | POWER FIELD-EFFECT TRANSISTOR, 60A I(D), 30V, 0.027OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 237 |
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| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: RF1S30N06LE OMO.#: OMO-RF1S30N06LE-1190 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: RF1S30N06LESM9A OMO.#: OMO-RF1S30N06LESM9A-1190 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S30N06LSM OMO.#: OMO-RF1S30N06LSM-1190 |
全新原裝 |
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Mfr.#: RF1S42N03LSM9AS2495 OMO.#: OMO-RF1S42N03LSM9AS2495-1190 |
全新原裝 |
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Mfr.#: RF1S45N06SM OMO.#: OMO-RF1S45N06SM-1190 |
Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S50N06 LESM OMO.#: OMO-RF1S50N06-LESM-1190 |
全新原裝 |
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Mfr.#: RF1S50N06SM OMO.#: OMO-RF1S50N06SM-1190 |
全新原裝 |
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Mfr.#: RF1S630SM OMO.#: OMO-RF1S630SM-1190 |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S640SM OMO.#: OMO-RF1S640SM-1190 |
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) TO-263AB - Bulk (Alt: RF1S640SM) |
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Mfr.#: RF1SL15 R47J OMO.#: OMO-RF1SL15-R47J-1190 |
全新原裝 |