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SIHB35N60EF-GE3

SIHB35N60EF-GE3
Mfr. #:
SIHB35N60EF-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
生命週期:
製造商新產品
數據表:
SIHB35N60EF-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
SIHB35N60EF-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-263-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
32 A
Rds On - 漏源電阻：
97 mOhms
Vgs th - 柵源閾值電壓：
2 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
134 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
250 W
配置：
單身的
頻道模式：
增強
系列：
英孚
晶體管類型：
1 N-Channel EF-Series Power MOSFET
品牌：
威世 / Siliconix
正向跨導 - 最小值：
8 S
秋季時間：
61 ns
產品類別：
MOSFET
上升時間：
85 ns
出廠包裝數量：
1
子類別：
MOSFET
典型關斷延遲時間：
96 ns
典型的開啟延遲時間：
28 ns
Tags
SIHB3, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
型號 製造商 描述 庫存 價格
SIHB35N60EF-GE3
DISTI # V99:2348_22712078		Vishay IntertechnologiesEF Series Power MOSFET with Fast Body Diode D2PAK (TO-263), 97 m @ 10V850
  • 1000:$3.1420
  • 500:$3.7050
  • 100:$4.3430
  • 10:$5.3300
  • 1:$7.0510
SIHB35N60EF-GE3
DISTI # SIHB35N60EF-GE3-ND		Vishay SiliconixMOSFET N-CH D2PAK TO-263
RoHS: Compliant
Min Qty: 1
Container: Bulk		1045In Stock
  • 2500:$3.2399
  • 1000:$3.4104
  • 500:$4.0438
  • 100:$4.7502
  • 10:$5.7980
  • 1:$6.4600
SIHB35N60EF-GE3
DISTI # 32868259		Vishay IntertechnologiesEF Series Power MOSFET with Fast Body Diode D2PAK (TO-263), 97 m @ 10V850
  • 1000:$3.1420
  • 500:$3.7050
  • 100:$4.3430
  • 10:$5.3300
  • 2:$7.0510
SIHB35N60EF-GE3
DISTI # SIHB35N60EF-GE3		Vishay Intertechnologies(Alt: SIHB35N60EF-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€2.5900
  • 500:€2.6900
  • 50:€2.7900
  • 100:€2.7900
  • 25:€3.0900
  • 10:€3.7900
  • 1:€4.8900
SIHB35N60EF-GE3
DISTI # SIHB35N60EF-GE3		Vishay Intertechnologies- Tape and Reel (Alt: SIHB35N60EF-GE3)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$2.8900
  • 6000:$2.9900
  • 4000:$3.0900
  • 2000:$3.1900
  • 1000:$3.2900
SIHB35N60EF-GE3
DISTI # 99AC9553		Vishay IntertechnologiesMOSFET, N-CH, 32A, 600V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:32A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.084ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes50
  • 500:$3.8900
  • 250:$4.3300
  • 100:$4.4700
  • 50:$4.7900
  • 25:$5.1100
  • 10:$5.4300
  • 1:$6.5500
SIHB35N60EF-GE3
DISTI # 78-SIHB35N60EF-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		1050
  • 1:$6.4900
  • 10:$5.3800
  • 100:$4.4300
  • 250:$4.2900
  • 500:$3.8500
  • 1000:$3.2400
  • 2500:$3.0800
SIHB35N60EF-GE3
DISTI # 3019078		Vishay IntertechnologiesMOSFET, N-CH, 32A, 600V, TO-263
RoHS: Compliant		50
  • 1000:$4.1200
  • 500:$4.5300
  • 250:$5.0800
  • 100:$5.3200
  • 10:$6.3700
  • 1:$8.1700
SIHB35N60EF-GE3
DISTI # 3019078		Vishay IntertechnologiesMOSFET, N-CH, 32A, 600V, TO-26350
  • 500:£2.7900
  • 250:£3.1200
  • 100:£3.2100
  • 10:£3.9000
  • 1:£5.1800
圖片 型號 描述
SIHB35N60EF-GE3

Mfr.#: SIHB35N60EF-GE3

OMO.#: OMO-SIHB35N60EF-GE3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB35N60E-GE3

Mfr.#: SIHB35N60E-GE3

OMO.#: OMO-SIHB35N60E-GE3-VISHAY

 MOSFET N-CH 600V 32A D2PAK TO263
SIHB35N60EF-GE3

Mfr.#: SIHB35N60EF-GE3

OMO.#: OMO-SIHB35N60EF-GE3-VISHAY

 EF Series Power MOSFET with Fast Body Diode D2PAK (TO-263), 97 m @ 10V
可用性
庫存:
Available
訂購:
1984
輸入數量:
SIHB35N60EF-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$6.49
US$6.49
10
US$5.38
US$53.80
100
US$4.43
US$443.00
250
US$4.29
US$1 072.50
500
US$3.85
US$1 925.00
1000
US$3.24
US$3 240.00
2500
US$3.08
US$7 700.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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