IPB80N06S208ATMA2

Mfr. #:: IPB80N06S208ATMA2
製造商:: Infineon Technologies
描述:: MOSFET N-CHANNEL_55/60V
生命週期:: 製造商新產品
數據表:: IPB80N06S208ATMA2 數據表
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ECAD Model:
更多信息:: IPB80N06S208ATMA2 更多信息

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: TO-263-3

通道數：: 1 Channel

晶體管極性：: N通道

配置：: 單身的

資質：: AEC-Q101

打包：: 捲軸

高度：: 4.4 mm

長度：: 10 mm

晶體管類型：: 1 N-Channel

寬度：: 9.25 mm

品牌：: 英飛凌科技

產品類別：: MOSFET

出廠包裝數量：: 1000

子類別：: MOSFET

第 # 部分別名：: IPB80N06S2-08 SP001067884

單位重量：: 0.139332 oz

Tags: IPB80N06S20, IPB80N06S2, IPB80N06, IPB80N0, IPB80N, IPB8, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB80N06S208ATMA2 描述

***Components: On a Reel of 1000, N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK Infineon IPB80N06S208ATMA1

***ical: Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***et: Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) TO-263

***et Europe: Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R

***ronik: MOSFET 40V 7.7mOHM AECQ TO263

***i-Key: MOSFET N-CH 55V 80A TO263-3

***ineon: Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

IPB80N06S208ATMA2 更多信息

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

Market price

型號	製造商	描述	庫存	價格
IPB80N06S208ATMA2 DISTI # IPB80N06S208ATMA2-ND	Infineon Technologies AG	MOSFET N-CH 55V 80A TO263-3 Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$1.3584
IPB80N06S208ATMA2 DISTI # IPB80N06S208ATMA2	Infineon Technologies AG	Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Bulk (Alt: IPB80N06S208ATMA2) RoHS: Compliant Min Qty: 439 Container: Bulk	Americas - 0	4390:$0.7243 2195:$0.7374 880:$0.7631 441:$0.7917 439:$0.8213
IPB80N06S208ATMA2 DISTI # IPB80N06S208ATMA2	Infineon Technologies AG	Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S208ATMA2) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$1.1903 6000:$1.2119 4000:$1.2541 2000:$1.3011 1000:$1.3499
IPB80N06S208ATMA2 DISTI # 726-IPB80N06S208ATMA	Infineon Technologies AG	MOSFET N-CHANNEL_55/60V	546	1:$1.8100 10:$1.5400 100:$1.2400 500:$1.0800 1000:$0.8920 2000:$0.8310 5000:$0.8000 10000:$0.7690
IPB80N06S208ATMA2	Infineon Technologies AG	OptlMOS N-Channel Power MOSFET RoHS: Compliant	2000	1000:$0.7500 500:$0.7900 100:$0.8300 25:$0.8600 1:$0.9300

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