SIHB22N60ET1-GE3

SIHB22N60ET1-GE3
Mfr. #:
SIHB22N60ET1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 600V Vds E Series D2PAK TO-263
生命週期:
製造商新產品
數據表:
SIHB22N60ET1-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB22N60ET1-GE3 DatasheetSIHB22N60ET1-GE3 Datasheet (P4-P6)SIHB22N60ET1-GE3 Datasheet (P7-P9)
ECAD Model:
產品屬性
屬性值
製造商:
威世
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
TO-263-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
650 V
Id - 連續漏極電流:
21 A
Rds On - 漏源電阻:
180 mOhms
Vgs th - 柵源閾值電壓:
4 V
Qg - 門電荷:
57 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
227 W
配置:
單身的
打包:
捲軸
系列:
E
晶體管類型:
1 N-Channel
品牌:
威世 / Siliconix
秋季時間:
35 ns
產品類別:
MOSFET
上升時間:
27 ns
出廠包裝數量:
800
子類別:
MOSFET
典型關斷延遲時間:
66 ns
典型的開啟延遲時間:
18 ns
單位重量:
0.077603 oz
Tags
SIHB22N60E, SIHB22N60, SIHB22, SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E-Series N-Channel 600 V 0.18 O 86 nC Surface Mount Power Mosfet - D2PAK
***S
new, original packaged
***ical
E Series Power MOSFET
***or
MOSFET N-CH 600V 21A TO263
***et
N-CHANNEL 600V
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:21A; On Resistance Rds(On):0.15Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
型號 製造商 描述 庫存 價格
SIHB22N60ET1-GE3
DISTI # V72:2272_09219036
Vishay IntertechnologiesSIHB22N60ET1-GE30
    SIHB22N60ET1-GE3
    DISTI # SIHB22N60ET1-GE3CT-ND
    Vishay SiliconixMOSFET N-CH 600V 21A TO263
    RoHS: Not compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    785In Stock
    • 100:$2.6994
    • 10:$3.2950
    • 1:$3.6700
    SIHB22N60ET1-GE3
    DISTI # SIHB22N60ET1-GE3DKR-ND
    Vishay SiliconixMOSFET N-CH 600V 21A TO263
    RoHS: Not compliant
    Min Qty: 1
    Container: Digi-Reel®
    785In Stock
    • 100:$2.6994
    • 10:$3.2950
    • 1:$3.6700
    SIHB22N60ET1-GE3
    DISTI # SIHB22N60ET1-GE3TR-ND
    Vishay SiliconixMOSFET N-CH 600V 21A TO263
    RoHS: Not compliant
    Min Qty: 800
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 5600:$1.7203
    • 2400:$1.7875
    • 1600:$1.8816
    • 800:$2.2310
    SIHB22N60ET1-GE3
    DISTI # SIHB22N60ET1-GE3
    Vishay IntertechnologiesN-CHANNEL 600V (Alt: SIHB22N60ET1-GE3)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
    • 500:€1.6900
    • 1000:€1.6900
    • 50:€1.7900
    • 100:€1.7900
    • 25:€1.9900
    • 10:€2.4900
    • 1:€3.1900
    SIHB22N60ET1-GE3
    DISTI # SIHB22N60ET1-GE3
    Vishay IntertechnologiesN-CHANNEL 600V - Trays (Alt: SIHB22N60ET1-GE3)
    RoHS: Compliant
    Min Qty: 800
    Container: Tray
    Americas - 0
    • 8000:$1.5900
    • 4800:$1.6900
    • 3200:$1.7900
    • 1600:$1.9900
    • 800:$2.0900
    SIHB22N60ET1-GE3.
    DISTI # 61AC1922
    Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:227W,No. of Pins:3Pins RoHS Compliant: Yes0
    • 8000:$1.5900
    • 4800:$1.6900
    • 3200:$1.7900
    • 1600:$1.9900
    • 1:$2.0900
    SIHB22N60ET1-GE3
    DISTI # 78-SIHB22N60ET1-GE3
    Vishay IntertechnologiesMOSFET 600V Vds E Series D2PAK TO-263
    RoHS: Compliant
    637
    • 1:$3.5800
    • 10:$2.9600
    • 100:$2.4400
    • 250:$2.3600
    • 500:$2.1200
    • 800:$1.7900
    • 2400:$1.7000
    • 4800:$1.6300
    圖片 型號 描述
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    UCC24612-1DBVR

    Mfr.#: UCC24612-1DBVR

    OMO.#: OMO-UCC24612-1DBVR

    Switching Controllers SYNC RECTIFIER FLYBACK
    FDD5N50TM-WS

    Mfr.#: FDD5N50TM-WS

    OMO.#: OMO-FDD5N50TM-WS

    MOSFET UniFET 500V 4A
    DR74-820-R

    Mfr.#: DR74-820-R

    OMO.#: OMO-DR74-820-R

    Fixed Inductors 82uH 1.11A 0.345ohms
    FQB33N10LTM

    Mfr.#: FQB33N10LTM

    OMO.#: OMO-FQB33N10LTM-ON-SEMICONDUCTOR

    MOSFET N-CH 100V 33A D2PAK
    RC2512FK-0751KL

    Mfr.#: RC2512FK-0751KL

    OMO.#: OMO-RC2512FK-0751KL-YAGEO

    RES SMD 51K OHM 1% 1W 2512
    DF22-2P-7.92DSA(05)

    Mfr.#: DF22-2P-7.92DSA(05)

    OMO.#: OMO-DF22-2P-7-92DSA-05--HIROSE

    Power to the Board HDR 2 POS 7.92mm Sol ST Thru-Hole Bag
    ZM4744A-GS08

    Mfr.#: ZM4744A-GS08

    OMO.#: OMO-ZM4744A-GS08-VISHAY

    Zener Diodes 15 Volt 1 Watt 5%
    DR74-820-R

    Mfr.#: DR74-820-R

    OMO.#: OMO-DR74-820-R-EATON

    Fixed Inductors 82uH 1.11A 0.345ohms
    可用性
    庫存:
    637
    訂購:
    2620
    輸入數量:
    SIHB22N60ET1-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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