OMO ElectronicOMO Electronic
Expand menu
您好，登錄我的帳戶
0 購物車

SI1922EDH-T1-GE3

SI1922EDH-T1-GE3
Mfr. #:
SI1922EDH-T1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 20V Vds 8V Vgs SC70-6
生命週期:
製造商新產品
數據表:
SI1922EDH-T1-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI1922EDH-T1-GE3 DatasheetSI1922EDH-T1-GE3 Datasheet (P4-P6)SI1922EDH-T1-GE3 Datasheet (P7-P9)SI1922EDH-T1-GE3 Datasheet (P10-P12)
ECAD Model:
更多信息:
SI1922EDH-T1-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
SOT-363-6
通道數：
2 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
20 V
Id - 連續漏極電流：
1.3 A
Rds On - 漏源電阻：
198 mOhms
Vgs th - 柵源閾值電壓：
400 mV
Vgs - 柵源電壓：
8 V
Qg - 門電荷：
2.5 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
1.25 W
配置：
雙重的
頻道模式：
增強
商品名：
溝槽場效應晶體管
打包：
捲軸
高度：
1 mm
長度：
2.1 mm
系列：
SI1
晶體管類型：
2 N-Channel
寬度：
1.25 mm
品牌：
威世 / Siliconix
正向跨導 - 最小值：
4 S
秋季時間：
220 ns
產品類別：
MOSFET
上升時間：
80 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
480 ns
典型的開啟延遲時間：
43 ns
第 # 部分別名：
SI1988DH-T1-GE3
單位重量：
0.000265 oz
Tags
SI1922EDH-T1, SI1922EDH-T, SI1922, SI192, SI19, SI1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI1922EDH-T1-GE3 Dual N-channel MOSFET Transistor; 1.3 A; 20 V; 6-Pin SOT-363
***et Europe
Transistor MOSFET Array Dual N-CH 20V 1.3A 6-Pin SC-70 T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.3A; On Resistance Rds(On):0.165Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400Mv Rohs Compliant: No
***nell
MOSFET, NN CH, 20V, 1.3A, SOT363; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-363; No. of Pins:6; Continuous Drain Current Id:1.3A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):0.165ohm; Power Dissipation Pd:1.25W
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
型號 製造商 描述 庫存 價格
SI1922EDH-T1-GE3
DISTI # V36:1790_09216775		Vishay IntertechnologiesTrans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R
RoHS: Compliant		0
  • 3000000:$0.1227
  • 1500000:$0.1229
  • 300000:$0.1315
  • 30000:$0.1444
  • 3000:$0.1465
SI1922EDH-T1-GE3
DISTI # V72:2272_09216775		Vishay IntertechnologiesTrans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R
RoHS: Compliant		0
    SI1922EDH-T1-GE3
    DISTI # SI1922EDH-T1-GE3CT-ND    		Vishay SiliconixMOSFET 2N-CH 20V 1.3A SOT-363
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		40575In Stock
    • 1000:$0.1655
    • 500:$0.2141
    • 100:$0.2725
    • 10:$0.3650
    • 1:$0.4300
    SI1922EDH-T1-GE3
    DISTI # SI1922EDH-T1-GE3DKR-ND    		Vishay SiliconixMOSFET 2N-CH 20V 1.3A SOT-363
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		40575In Stock
    • 1000:$0.1655
    • 500:$0.2141
    • 100:$0.2725
    • 10:$0.3650
    • 1:$0.4300
    SI1922EDH-T1-GE3
    DISTI # SI1922EDH-T1-GE3TR-ND    		Vishay SiliconixMOSFET 2N-CH 20V 1.3A SOT-363
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		39000In Stock
    • 75000:$0.1197
    • 30000:$0.1210
    • 15000:$0.1276
    • 6000:$0.1370
    • 3000:$0.1465
    SI1922EDH-T1-GE3
    DISTI # SI1922EDH-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R (Alt: SI1922EDH-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 15000
    • 150000:$0.1178
    • 75000:$0.1198
    • 30000:$0.1219
    • 15000:$0.1263
    • 9000:$0.1309
    • 6000:$0.1360
    • 3000:$0.1414
    SI1922EDH-T1-GE3
    DISTI # SI1922EDH-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R - Tape and Reel (Alt: SI1922EDH-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.0949
    • 18000:$0.0979
    • 12000:$0.0999
    • 6000:$0.1049
    • 3000:$0.1079
    SI1922EDH-T1-GE3
    DISTI # SI1922EDH-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R (Alt: SI1922EDH-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.1039
    • 18000:€0.1109
    • 12000:€0.1209
    • 6000:€0.1399
    • 3000:€0.2059
    SI1922EDH-T1-GE3
    DISTI # 65T1686    		Vishay IntertechnologiesTrans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R - Product that comes on tape, but is not reeled (Alt: 65T1686)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1000:$0.1540
    • 500:$0.1990
    • 250:$0.2210
    • 100:$0.2420
    • 50:$0.2840
    • 25:$0.3250
    • 1:$0.4300
    SI1922EDH-T1-GE3
    DISTI # 65T1686    		Vishay IntertechnologiesDual MOSFET, Dual N Channel, 1.3 A, 20 V, 0.165 ohm, 4.5 V, 400 mV RoHS Compliant: Yes0
    • 1000:$0.1560
    • 500:$0.2010
    • 250:$0.2230
    • 100:$0.2440
    • 50:$0.2860
    • 25:$0.3280
    • 1:$0.4340
    SI1922EDH-T1-GE3
    DISTI # 64T4056    		Vishay IntertechnologiesMOSFET, NN CH, 20V, 1.3A, SOT363,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:1.3A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.165ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV RoHS Compliant: Yes860
    • 1000:$0.1840
    • 500:$0.2290
    • 250:$0.2510
    • 100:$0.2720
    • 50:$0.3140
    • 25:$0.3560
    • 1:$0.4620
    SI1922EDH-T1-GE3.
    DISTI # 28AC2118    		Vishay IntertechnologiesTransistor Polarity:Dual N Channel,Continuous Drain Current Id:1.3A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.165ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV,Power Dissipation Pd:1.25W RoHS Compliant: No0
    • 30000:$0.0980
    • 18000:$0.1000
    • 12000:$0.1030
    • 6000:$0.1080
    • 1:$0.1110
    SI1922EDH-T1-GE3
    DISTI # 70616150    		Vishay SiliconixSI1922EDH-T1-GE3 Dual N-channel MOSFET Transistor,1.3 A,20 V,6-Pin SOT-363
    RoHS: Compliant    		0
    • 300:$0.2700
    • 600:$0.2320
    • 1500:$0.2030
    • 3000:$0.1830
    SI1922EDH-T1-GE3
    DISTI # 78-SI1922EDH-T1-GE3    		Vishay IntertechnologiesMOSFET 20V Vds 8V Vgs SC70-6
    RoHS: Compliant    		14142
    • 1:$0.4200
    • 10:$0.3240
    • 100:$0.2410
    • 500:$0.1980
    • 1000:$0.1530
    • 3000:$0.1390
    • 6000:$0.1300
    • 9000:$0.1210
    • 24000:$0.1150
    SI1922EDH-T1-GE3
    DISTI # 8123091P    		Vishay IntertechnologiesTRANS MOSFET N-CH 20V 1.3A 6-PIN, RL4550
    • 3000:£0.1100
    • 1500:£0.1150
    • 600:£0.1440
    • 300:£0.1820
    SI1922EDH-T1-GE3
    DISTI # TMOS2002    		Vishay IntertechnologiesDual N-CH 20V 1,3A/4,5V SOT363
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 3000:$0.1821
    • 6000:$0.1717
    • 9000:$0.1612
    • 12000:$0.1456
    • 18000:$0.1404
    SI1922EDH-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 8V Vgs SC70-6
    RoHS: Compliant    		Americas - 24000
      SI1922EDH-T1-GE3
      DISTI # 2056714      		Vishay IntertechnologiesMOSFET, NN CH, 20V, 1.3A, SOT363
      RoHS: Compliant      		860
      • 3000:$0.2280
      • 1000:$0.2320
      • 500:$0.3000
      • 100:$0.3650
      • 10:$0.4900
      • 1:$0.6480
      SI1922EDH-T1-GE3
      DISTI # 2056714RL      		Vishay IntertechnologiesMOSFET, NN CH, 20V, 1.3A, SOT363
      RoHS: Compliant      		0
      • 3000:$0.2280
      • 1000:$0.2320
      • 500:$0.3000
      • 100:$0.3650
      • 10:$0.4900
      • 1:$0.6480
      SI1922EDH-T1-GE3
      DISTI # 2056714      		Vishay IntertechnologiesMOSFET, NN CH, 20V, 1.3A, SOT3631755
      • 500:£0.1540
      • 250:£0.1700
      • 100:£0.1860
      • 25:£0.2730
      • 5:£0.2850
      圖片 型號 描述
      RFPA3800TR13

      Mfr.#: RFPA3800TR13

      OMO.#: OMO-RFPA3800TR13

      		 RF Amplifier 150-960MHz 5W NF 3.2dB P1dB 36dB
      PMEG40T50EPX

      Mfr.#: PMEG40T50EPX

      OMO.#: OMO-PMEG40T50EPX

      		 Schottky Diodes & Rectifiers PMEG40T50EP/SOD128/FlatPower
      ERJ-3EKF1001V

      Mfr.#: ERJ-3EKF1001V

      OMO.#: OMO-ERJ-3EKF1001V

      		 Thick Film Resistors - SMD 0603 1Kohms 1% AEC-Q200
      BME680

      Mfr.#: BME680

      OMO.#: OMO-BME680

      		 Air Quality Sensors Environmental Sensor VOC IIR EMC
      ESP32-WROOM-32D

      Mfr.#: ESP32-WROOM-32D

      OMO.#: OMO-ESP32-WROOM-32D

      		 WiFi Modules (802.11) SMD Module, ESP32-D0WD, 32Mbits SPI flash, UART mode,
      ERJ-3GEY0R00V

      Mfr.#: ERJ-3GEY0R00V

      OMO.#: OMO-ERJ-3GEY0R00V

      		 Thick Film Resistors - SMD 0603 Zero Ohms
      PMEG40T50EPX

      Mfr.#: PMEG40T50EPX

      OMO.#: OMO-PMEG40T50EPX-NEXPERIA

      		 DIODE SCHOTTKY 40V 5A CFP5
      RFPA3800TR13

      Mfr.#: RFPA3800TR13

      OMO.#: OMO-RFPA3800TR13-279

      		 RF Amplifier 150-960MHz 5W NF 3.2dB P1dB 36dB
      SI1133-AA00-GM

      Mfr.#: SI1133-AA00-GM

      OMO.#: OMO-SI1133-AA00-GM-SILICON-LABS

      		 SENSOR OPT 625NM/525NM AMB 10DFN
      BME680

      Mfr.#: BME680

      OMO.#: OMO-BME680-BOSCH-SENSORTEC

      		 SENSOR RH PRESSURE TEMP VOC
      可用性
      庫存:
      17
      訂購:
      2000
      輸入數量:
      SI1922EDH-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$0.42
      US$0.42
      10
      US$0.32
      US$3.24
      100
      US$0.24
      US$24.10
      500
      US$0.20
      US$99.00
      1000
      US$0.15
      US$153.00
      由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
      從...開始
      最新產品
      • SUM70101EL 100 V P-Channel MOSFET
        SUM70101EL 100 V P-Channel MOSFET
        Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
      • SIRA20DP TrenchFET® Gen IV MOSFET
        SIRA20DP TrenchFET® Gen IV MOSFET
        Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
      • P-Channel MOSFETs
        P-Channel MOSFETs
        Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
      • Compare SI1922EDH-T1-GE3
        Compare SI1922EDH-T1-GE3
        SI1922EDHT1E3 vs SI1922EDHT1GE3 vs SI1922EDHT1GE3CUTTAPE
      • SiP32452, SiP32453 Load Switch
        SiP32452, SiP32453 Load Switch
        Vishay's load switches have a low input logic control threshold and a fast turn on time.
      • PowerPAIR®
        PowerPAIR®
        Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
      More Newest Products
      Top