SIZ200DT-T1-GE3

Mfr. #:: SIZ200DT-T1-GE3
製造商:: Vishay
描述:: MOSFET 30V Vds 20/-16V Vgs PowerPAIR 3x3S
生命週期:: 製造商新產品
數據表:: SIZ200DT-T1-GE3 數據表
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HTML Datasheet:: SIZ200DT-T1-GE3 Datasheet SIZ200DT-T1-GE3 Datasheet (P4-P6)SIZ200DT-T1-GE3 Datasheet (P7-P9)SIZ200DT-T1-GE3 Datasheet (P10-P12)SIZ200DT-T1-GE3 Datasheet (P13)
ECAD Model:
更多信息:: SIZ200DT-T1-GE3 更多信息

產品屬性
屬性值

製造商：: 威世

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: PowerPAIR-3x3S-8

通道數：: 2 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 30 V

Id - 連續漏極電流：: 61 A, 60 A

Rds On - 漏源電阻：: 5.5 mOhms, 5.8 mOhms

Vgs th - 柵源閾值電壓：: 1.1 V

Vgs - 柵源電壓：: - 16 V, 20 V

Qg - 門電荷：: 28 nC, 30 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 33 W

配置：: 雙重的

頻道模式：: 增強

商品名：: 溝槽場效應晶體管

打包：: 捲軸

系列：: 工業區

晶體管類型：: 2 N-Channel

品牌：: 威世

正向跨導 - 最小值：: 118 S, 105 S

秋季時間：: 5 ns

產品類別：: MOSFET

上升時間：: 5 ns

出廠包裝數量：: 3000

子類別：: MOSFET

典型關斷延遲時間：: 23 ns

典型的開啟延遲時間：: 11 ns

Tags: SiZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIZ200DT-T1-GE3 更多信息

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

PowerPAIR® Dual-MOSFETs: Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency.

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

型號	製造商	描述	庫存	價格
SIZ200DT-T1-GE3 DISTI # V36:1790_22587803	Vishay Intertechnologies	Dual N-Channel 30-V (D-S) MOSFETs Symm. PowerPAIR 3 x 3 1G sh ch , 5.5 m @ 10V m @ 7.5V 7.3 m @ 4.5V	0
SIZ200DT-T1-GE3 DISTI # V99:2348_22587803	Vishay Intertechnologies	Dual N-Channel 30-V (D-S) MOSFETs Symm. PowerPAIR 3 x 3 1G sh ch , 5.5 m @ 10V m @ 7.5V 7.3 m @ 4.5V	0
SIZ200DT-T1-GE3 DISTI # SIZ200DT-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH DUAL 30V RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	100In Stock	1000:$0.5353 500:$0.6700 100:$0.8550 10:$1.0740 1:$1.2100
SIZ200DT-T1-GE3 DISTI # SIZ200DT-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH DUAL 30V RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	100In Stock	1000:$0.5353 500:$0.6700 100:$0.8550 10:$1.0740 1:$1.2100
SIZ200DT-T1-GE3 DISTI # SIZ200DT-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH DUAL 30V RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.4871
SIZ200DT-T1-GE3 DISTI # SIZ200DT-T1-GE3	Vishay Intertechnologies	- Tape and Reel (Alt: SIZ200DT-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	6000:$0.4319 12000:$0.4189 18000:$0.4019 30000:$0.3909 60000:$0.3799
SIZ200DT-T1-GE3 DISTI # 81AC3511	Vishay Intertechnologies	DUAL N-CHANNEL 30-V (D-S) MOSFET	0	2500:$0.4100 1000:$0.4460 500:$0.5170 100:$0.5910 50:$0.6690 25:$0.7370 10:$0.8050 1:$1.0400
SIZ200DT-T1-GE3 DISTI # 94AC9390	Vishay Intertechnologies	MOSFET, DUAL N-CH, 30V, 61A, POWERPAIR,Transistor Polarity:N Channel,Continuous Drain Current Id:61A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0045ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.4V,Power RoHS Compliant: Yes	50	1000:$0.3570 500:$0.4520 250:$0.4890 100:$0.5260 50:$0.5790 25:$0.6320 10:$0.6850 1:$0.8320
SIZ200DT-T1-GE3 DISTI # 78-SIZ200DT-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20/-16V Vgs PowerPAIR 3x3S RoHS: Compliant	50	1:$1.0300 10:$0.8560 100:$0.6570 500:$0.5650 1000:$0.4460 3000:$0.4160
SIZ200DT-T1-GE3 DISTI # 2990577	Vishay Intertechnologies	MOSFET, DUAL N-CH, 30V, 61A, POWERPAIR RoHS: Compliant	50	5000:$0.5400 1000:$0.5800 500:$0.7100 250:$0.7900 100:$0.8600 25:$1.1300 5:$1.2300
SIZ200DT-T1-GE3 DISTI # 2990577	Vishay Intertechnologies	MOSFET, DUAL N-CH, 30V, 61A, POWERPAIR RoHS: Compliant	50	500:£0.3990 250:£0.4430 100:£0.4830 25:£0.6370 5:£0.6920

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