SiSA26DN-T1-GE3

Mfr. #:: SiSA26DN-T1-GE3
製造商:: Vishay / Siliconix
描述:: MOSFET 25V Vds 16V Vgs PowerPAK 1212-8
生命週期:: 製造商新產品
數據表:: SiSA26DN-T1-GE3 數據表
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HTML Datasheet:: SiSA26DN-T1-GE3 Datasheet SiSA26DN-T1-GE3 Datasheet (P4-P6)SiSA26DN-T1-GE3 Datasheet (P7)
ECAD Model:
更多信息:: SiSA26DN-T1-GE3 更多信息

產品屬性
屬性值

製造商：: 威世

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: PowerPAK-1212-8

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 25 V

Id - 連續漏極電流：: 60 A

Rds On - 漏源電阻：: 2.15 mOhms

Vgs th - 柵源閾值電壓：: 1 V

Vgs - 柵源電壓：: 16 V, - 12 V

Qg - 門電荷：: 44 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 39 W

配置：: 單身的

頻道模式：: 增強

打包：: 捲軸

系列：: SiSA26DN

晶體管類型：: 1 N-Channel

品牌：: 威世 / Siliconix

正向跨導 - 最小值：: 88 S

秋季時間：: 8 ns

產品類別：: MOSFET

上升時間：: 23 ns

出廠包裝數量：: 3000

子類別：: MOSFET

典型關斷延遲時間：: 16 ns

典型的開啟延遲時間：: 9 ns

Tags: SISA, SIS

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SiSA26DN-T1-GE3 描述

***et: TrenchFET Gen IV Power MOSFET N-Channel Single 25V VDS +16V -12V VGS 60A ID 8-Pin PowerPAK 1212 T/R

***ical: Trans MOSFET N-CH 25V 29.1A 8-Pin PowerPAK 1212 EP T/R

***i-Key: MOSFET N-CH 25V 60A POWERPAK1212

***ark: Mosfet, N-Ch, 25V, 60A, 150Deg C, 39W; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(On):0.00215Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 25V, 60A, 150DEG C, 39W; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.00215ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:39W; Transistor Case Style:PowerPAK 1212; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CANAL N, 25V, 60A, 150°C, 39W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:25V; Resistenza di Attivazione Rds(on):0.00215ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.5V; Dissipazione di Potenza Pd:39W; Modello Case Transistor:PowerPAK 1212; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

SiSA26DN-T1-GE3 更多信息

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

型號	製造商	描述	庫存	價格
SISA26DN-T1-GE3 DISTI # V72:2272_21388883	Vishay Intertechnologies	N-Channel 25 V (D-S) MOSFET	6000	75000:$0.2871 30000:$0.2901 15000:$0.2932 6000:$0.2963 3000:$0.2994 1000:$0.3261 500:$0.4122 250:$0.4599 100:$0.5110 50:$0.5923 25:$0.6581 10:$0.7377 1:$0.9122
SISA26DN-T1-GE3 DISTI # V99:2348_21388883	Vishay Intertechnologies	N-Channel 25 V (D-S) MOSFET	0	6000000:$0.3107 3000000:$0.3109 600000:$0.3155 60000:$0.3218 6000:$0.3228
SISA26DN-T1-GE3 DISTI # SISA26DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 25V 60A POWERPAK1212 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5631In Stock	1000:$0.3668 500:$0.4586 100:$0.5801 10:$0.7570 1:$0.8600
SISA26DN-T1-GE3 DISTI # SISA26DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 25V 60A POWERPAK1212 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5631In Stock	1000:$0.3668 500:$0.4586 100:$0.5801 10:$0.7570 1:$0.8600
SISA26DN-T1-GE3 DISTI # SISA26DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 25V 60A POWERPAK1212 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	30000:$0.2820 15000:$0.2894 6000:$0.3005 3000:$0.3228
SISA26DN-T1-GE3 DISTI # 31355217	Vishay Intertechnologies	N-Channel 25 V (D-S) MOSFET	6000	15000:$0.2932 6000:$0.2963 3000:$0.2994 1000:$0.3261 500:$0.4122 250:$0.4599 100:$0.5110 50:$0.5923 25:$0.6581 22:$0.7377
SISA26DN-T1-GE3 DISTI # SISA26DN-T1-GE3	Vishay Intertechnologies	TrenchFET Gen IV Power MOSFET N-Channel Single 25V VDS +16V -12V VGS 60A ID8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISA26DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.2709 30000:$0.2789 18000:$0.2869 12000:$0.2989 6000:$0.3079
SISA26DN-T1-GE3 DISTI # 81AC2791	Vishay Intertechnologies	MOSFET, N-CH, 25V, 60A, 150DEG C, 39W,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.00215ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power RoHS Compliant: Yes	6040	1000:$0.3430 500:$0.4280 250:$0.4740 100:$0.5190 50:$0.5740 25:$0.6290 10:$0.6840 1:$0.8480
SISA26DN-T1-GE3 DISTI # 59AC7446	Vishay Intertechnologies	N-CHANNEL 25-V (D-S) MOSFET	0	50000:$0.2740 30000:$0.2870 20000:$0.3080 10000:$0.3290 5000:$0.3570 1:$0.3650
SiSA26DN-T1-GE3 DISTI # 78-SISA26DN-T1-GE3	Vishay Intertechnologies	MOSFET 25V Vds 16V Vgs PowerPAK 1212-8 RoHS: Compliant	5895	1:$0.8400 10:$0.6770 100:$0.5140 500:$0.4240 1000:$0.3400 3000:$0.3080
SISA26DN-T1-GE3 DISTI # 2932955	Vishay Intertechnologies	MOSFET, N-CH, 25V, 60A, 150DEG C, 39W	6045	500:£0.3070 250:£0.3400 100:£0.3720 10:£0.5390 1:£0.6960
SISA26DN-T1-GE3 DISTI # 2932955	Vishay Intertechnologies	MOSFET, N-CH, 25V, 60A, 150DEG C, 39W RoHS: Compliant	6040	1000:$0.4720 500:$0.4990 250:$0.5870 100:$0.7140 10:$0.9090 1:$1.1000

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