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SIHB15N65E-GE3

SIHB15N65E-GE3
Mfr. #:
SIHB15N65E-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
生命週期:
製造商新產品
數據表:
SIHB15N65E-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB15N65E-GE3 DatasheetSIHB15N65E-GE3 Datasheet (P4-P6)SIHB15N65E-GE3 Datasheet (P7-P9)
ECAD Model:
更多信息:
SIHB15N65E-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-263-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
700 V
Id - 連續漏極電流：
15 A
Rds On - 漏源電阻：
280 mOhms
Vgs th - 柵源閾值電壓：
4 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
48 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
34 W
配置：
單身的
頻道模式：
增強
打包：
大部分
系列：
E
品牌：
威世 / Siliconix
秋季時間：
25 ns
產品類別：
MOSFET
上升時間：
24 ns
出廠包裝數量：
1000
子類別：
MOSFET
典型關斷延遲時間：
48 ns
典型的開啟延遲時間：
18 ns
單位重量：
0.050717 oz
Tags
SIHB15N6, SIHB15, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N-Channel 650 V 280 mO 34 nC Surface Mount Power Mosfet - D2PAK
***et Europe
Trans MOSFET N-CH 650V 15A 3-Pin D2PAK T/R
***et
N-CHANNEL 650V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型號 製造商 描述 庫存 價格
SIHB15N65E-GE3
DISTI # SIHB15N65E-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 15A TO263
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.8963
SIHB15N65E-GE3
DISTI # SIHB15N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 15A 3-Pin D2PAK T/R - Tape and Reel (Alt: SIHB15N65E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$1.5900
  • 10000:$1.5900
  • 4000:$1.6900
  • 1000:$1.7900
  • 2000:$1.7900
SIHB15N65E-GE3
DISTI # SIHB15N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 15A 3-Pin D2PAK T/R (Alt: SIHB15N65E-GE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 500:€1.3900
  • 1000:€1.3900
  • 50:€1.4900
  • 100:€1.4900
  • 25:€1.6900
  • 10:€2.0900
  • 1:€2.9900
SIHB15N65E-GE3
DISTI # 78-SIHB15N65E-GE3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		0
  • 1:$3.6100
  • 10:$2.9900
  • 100:$2.4600
  • 250:$2.3800
  • 500:$2.1400
  • 1000:$1.8000
SIHB15N65E-GE3Vishay Intertechnologies 1000
    SIHB15N65E-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant    		Americas -
      圖片 型號 描述
      SIHB15N60E-GE3

      Mfr.#: SIHB15N60E-GE3

      OMO.#: OMO-SIHB15N60E-GE3

      		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
      SIHB15N65E-GE3

      Mfr.#: SIHB15N65E-GE3

      OMO.#: OMO-SIHB15N65E-GE3

      		 MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
      SIHB15N50E-GE3

      Mfr.#: SIHB15N50E-GE3

      OMO.#: OMO-SIHB15N50E-GE3-VISHAY

      		 IGBT Transistors MOSFET N-Channel 500V
      SIHB15N65E-GE3

      Mfr.#: SIHB15N65E-GE3

      OMO.#: OMO-SIHB15N65E-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 650V 280mOhm@10V 15A N-Ch E-SRS
      SIHB15N60E-GE3-CUT TAPE

      Mfr.#: SIHB15N60E-GE3-CUT TAPE

      OMO.#: OMO-SIHB15N60E-GE3-CUT-TAPE-1190

      		 全新原裝
      SIHB15N60E

      Mfr.#: SIHB15N60E

      OMO.#: OMO-SIHB15N60E-1190

      		 全新原裝
      SIHB15N60E-GE3

      Mfr.#: SIHB15N60E-GE3

      OMO.#: OMO-SIHB15N60E-GE3-VISHAY

      		 MOSFET N-CH 600V 15A DPAK
      SIHB15N60EGE3

      Mfr.#: SIHB15N60EGE3

      OMO.#: OMO-SIHB15N60EGE3-1190

      		 Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      SIHB15N65E

      Mfr.#: SIHB15N65E

      OMO.#: OMO-SIHB15N65E-1190

      		 全新原裝
      可用性
      庫存:
      Available
      訂購:
      3500
      輸入數量:
      SIHB15N65E-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$3.61
      US$3.61
      10
      US$2.99
      US$29.90
      100
      US$2.46
      US$246.00
      250
      US$2.38
      US$595.00
      500
      US$2.14
      US$1 070.00
      1000
      US$1.80
      US$1 800.00
      由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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