We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| BSZ12DN20NS3GATMA1 DISTI # BSZ12DN20NS3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 200V 11.3A 8TSDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSZ12DN20NS3GATMA1 DISTI # BSZ12DN20NS3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 200V 11.3A 8TSDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| BSZ12DN20NS3GATMA1 DISTI # BSZ12DN20NS3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 200V 11.3A 8TSDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| BSZ12DN20NS3GATMA1 DISTI # BSZ12DN20NS3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ12DN20NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSZ12DN20NS3GATMA1 DISTI # SP000781784 | Infineon Technologies AG | Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R (Alt: SP000781784) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 0 |
|
| BSZ12DN20NS3GATMA1 DISTI # BSZ12DN20NS3 G | Infineon Technologies AG | Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R (Alt: BSZ12DN20NS3 G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 | |
| BSZ12DN20NS3GATMA1 DISTI # 13AC8354 | Infineon Technologies AG | MOSFET, N-CH, 200V, 11.3A, TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:11.3A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.108ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power , RoHS Compliant: Yes | 1416 |
|
| BSZ12DN20NS3 G DISTI # 726-BSZ12DN20NS3G | Infineon Technologies AG | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 RoHS: Compliant | 281 |
|
| BSZ12DN20NS3GATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 11.3A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 76915 |
|
| BSZ12DN20NS3GATMA1 DISTI # 8259257P | Infineon Technologies AG | MOSFET N-CH 11.3A 200V OPTIMOS3 TSDSON8, RL | 4990 |
|
| BSZ12DN20NS3GATMA1 DISTI # 2725826 | Infineon Technologies AG | MOSFET, N-CH, 200V, 11.3A, TSDSON RoHS: Compliant | 1236 |
|
| BSZ12DN20NS3GATMA1 DISTI # 2725826 | Infineon Technologies AG | MOSFET, N-CH, 200V, 11.3A, TSDSON RoHS: Compliant | 1241 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: BSZ12DN20NS3 G OMO.#: OMO-BSZ12DN20NS3-G |
MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 |
|
Mfr.#: BSZ12DN20NNS3G OMO.#: OMO-BSZ12DN20NNS3G-1190 |
全新原裝 |
|
|
Mfr.#: BSZ12DN20NS3 G OMO.#: OMO-BSZ12DN20NS3-G-1190 |
MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 |
|
Mfr.#: BSZ12DN20NS3GATMA1 |
MOSFET N-CH 200V 11.3A 8TSDSON |
|
|
Mfr.#: BSZ12DN20NS3G OMO.#: OMO-BSZ12DN20NS3G-124 |
Darlington Transistors MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 |
