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BSZ22DN20NS3GATMA1

BSZ22DN20NS3GATMA1
Mfr. #:
BSZ22DN20NS3GATMA1
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3
生命週期:
製造商新產品
數據表:
BSZ22DN20NS3GATMA1 數據表
交貨:
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ECAD Model:
更多信息:
BSZ22DN20NS3GATMA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TSDSON-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
200 V
Id - 連續漏極電流：
7 A
Rds On - 漏源電阻：
194 mOhms
Vgs th - 柵源閾值電壓：
2 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
5.6 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
34 W
配置：
單身的
頻道模式：
增強
商品名：
優化MOS
打包：
捲軸
高度：
1.1 mm
長度：
3.3 mm
系列：
OptiMOS 3
晶體管類型：
1 N-Channel
寬度：
3.3 mm
品牌：
英飛凌科技
正向跨導 - 最小值：
3.5 S
秋季時間：
3 ns
產品類別：
MOSFET
上升時間：
4 ns
出廠包裝數量：
5000
子類別：
MOSFET
典型關斷延遲時間：
6 ns
典型的開啟延遲時間：
4 ns
第 # 部分別名：
BSZ22DN20NS3 BSZ22DN2NS3GXT G SP000781794
單位重量：
0.001277 oz
Tags
BSZ22, BSZ2, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 20, N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON Infineon BSZ22DN20NS3GATMA1
***p One Stop Global
Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP
***ical
Trans MOSFET N-CH 200V 7A 8-Pin TSDSON
***ark
MOSFET, N CH, 200V, 7A, TSDSON-8
***i-Key
MOSFET N-CH 200V 7A 8TDSON
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 200V, 7A, TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.194ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:34W; Transistor Case Style:TSDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 200V, 7A, TSDSON-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:7A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.194ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:34W; Modello Case Transistor:TSDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.
型號 製造商 描述 庫存 價格
BSZ22DN20NS3GATMA1
DISTI # V36:1790_06384496		Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant		20000
  • 5000:$0.3973
BSZ22DN20NS3GATMA1
DISTI # V72:2272_06384496		Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant		664
  • 500:$0.5384
  • 250:$0.5510
  • 100:$0.6122
  • 25:$0.7147
  • 10:$0.8735
  • 1:$1.0134
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 200V 7A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		9613In Stock
  • 1000:$0.4633
  • 500:$0.5869
  • 100:$0.7104
  • 10:$0.9110
  • 1:$1.0200
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 200V 7A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		9613In Stock
  • 1000:$0.4633
  • 500:$0.5869
  • 100:$0.7104
  • 10:$0.9110
  • 1:$1.0200
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 200V 7A 8TSDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 25000:$0.3799
  • 10000:$0.3839
  • 5000:$0.3988
BSZ22DN20NS3GATMA1
DISTI # 33128679		Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant		20000
  • 5000:$0.3973
BSZ22DN20NS3GATMA1
DISTI # 32736050		Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.3501
BSZ22DN20NS3GATMA1
DISTI # 31984785		Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant		664
  • 16:$1.0134
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP - Bulk (Alt: BSZ22DN20NS3GATMA1)
Min Qty: 962
Container: Bulk		Americas - 0
  • 9620:$0.3299
  • 4810:$0.3359
  • 2886:$0.3479
  • 1924:$0.3609
  • 962:$0.3739
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ22DN20NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.3619
  • 30000:$0.3689
  • 20000:$0.3819
  • 10000:$0.3959
  • 5000:$0.4109
BSZ22DN20NS3GATMA1
DISTI # SP000781794		Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP (Alt: SP000781794)
RoHS: Compliant
Min Qty: 5000		Europe - 0
  • 50000:€0.3329
  • 30000:€0.3579
  • 20000:€0.3879
  • 10000:€0.4229
  • 5000:€0.5179
BSZ22DN20NS3GATMA1
DISTI # 85X4160		Infineon Technologies AGMOSFET Transistor, N Channel, 7 A, 200 V, 0.194 ohm, 10 V, 3 V RoHS Compliant: Yes0
    BSZ22DN20NS3 G
    DISTI # 726-BSZ22DN20NS3G    		Infineon Technologies AGMOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3
    RoHS: Compliant    		12720
    • 1:$0.9300
    • 10:$0.8000
    • 100:$0.6150
    • 500:$0.5430
    • 1000:$0.4290
    • 5000:$0.3800
    • 10000:$0.3660
    BSZ22DN20NS3GATMA1
    DISTI # 726-BSZ22DN20NS3GATM    		Infineon Technologies AGMOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3
    RoHS: Compliant    		218
    • 1:$0.9300
    • 10:$0.8000
    • 100:$0.6150
    • 500:$0.5430
    • 1000:$0.4290
    • 5000:$0.3800
    • 10000:$0.3660
    BSZ22DN20NS3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 7A I(D), 200V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		122641
    • 1000:$0.3400
    • 500:$0.3600
    • 100:$0.3800
    • 25:$0.3900
    • 1:$0.4200
    BSZ22DN20NS3GATMA1
    DISTI # 2443374    		Infineon Technologies AGMOSFET, N CH, 200V, 7A, TSDSON-8
    RoHS: Compliant    		0
    • 5000:$0.5850
    • 1000:$0.6600
    • 500:$0.8350
    • 100:$0.9460
    • 10:$1.2400
    • 1:$1.4300
    BSZ22DN20NS3GATMA1
    DISTI # 2443374RL    		Infineon Technologies AGMOSFET, N CH, 200V, 7A, TSDSON-8
    RoHS: Compliant    		0
    • 5000:$0.5850
    • 1000:$0.6600
    • 500:$0.8350
    • 100:$0.9460
    • 10:$1.2400
    • 1:$1.4300
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    OMO.#: OMO-TLV313IDBVR-TEXAS-INSTRUMENTS

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    VLCF4018T-3R3N1R2-2

    Mfr.#: VLCF4018T-3R3N1R2-2

    OMO.#: OMO-VLCF4018T-3R3N1R2-2-TDK

    		 Fixed Inductors 3.3uH 1.2A 4x4x1.8mm
    XFL4020-102MEC

    Mfr.#: XFL4020-102MEC

    OMO.#: OMO-XFL4020-102MEC-1190

    		 Fixed Inductors 1uH 20% 11A 11.9mOhms AEC-Q200
    LM2595SX-ADJ/NOPB

    Mfr.#: LM2595SX-ADJ/NOPB

    OMO.#: OMO-LM2595SX-ADJ-NOPB-TEXAS-INSTRUMENTS

    		 IC REG BUCK ADJ 1A TO263-5
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    Mfr.#: AT0603FRE07100RL

    OMO.#: OMO-AT0603FRE07100RL-YAGEO

    		 Thin Film Resistors - SMD 100 Ohms 1% Tol. 50 PPM ANTI-SULFUR
    可用性
    庫存:
    Available
    訂購:
    1988
    輸入數量:
    BSZ22DN20NS3GATMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$0.93
    US$0.93
    10
    US$0.80
    US$8.00
    100
    US$0.62
    US$61.50
    500
    US$0.54
    US$271.50
    1000
    US$0.43
    US$429.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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