IPD060N03LGATMA1

Mfr. #:: IPD060N03LGATMA1
製造商:: Infineon Technologies
描述:: MOSFET N-CH 30V 50A TO252-3
生命週期:: 製造商新產品
數據表:: IPD060N03LGATMA1 數據表
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產品屬性
屬性值

製造商: 英飛凌科技

產品分類: 晶體管 - FET、MOSFET - 單

系列: IPD060N03

打包: 捲軸

部分別名: G IPD060N03L IPD060N03LGXT SP000680632

單位重量: 0.139332 oz

商品名: 優化MOS

包裝盒: TO-252-3

技術: 矽

通道數: 1 Channel

晶體管型: 1 N-Channel

Id 連續漏極電流: 50 A

Vds-漏-源-擊穿電壓: 30 V

Rds-On-Drain-Source-Resistance: 6 mOhms

晶體管極性: N通道

Tags: IPD060N03LG, IPD060, IPD06, IPD0, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD060N03LGATMA1 描述

***p One Stop Japan: Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R

***p One Stop Global: Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252

***ical: Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK

***et Europe: Trans MOSFET N-CH 30V 50A 3-Pin TO-252 T/R

***Components: MOSFET N-Channel 30V 50A OptiMOS3 TO252

***i-Key: MOSFET N-CH 30V 50A TO252-3

***ronik: N-CH 30V 50A 6mOhm TO252-3

***ark: Mosfet, N Channel, 30V, 50A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.005Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ment14 APAC: Prices include import duty and tax. MOSFET, N CH, 50A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:56W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:50A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***nell: MOSFET, CANALE N, 50A, 30V, PG-TO252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:50A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.005ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.2V; Dissipazione di Potenza Pd:56W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:50A; Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Temperatura di Esercizio Min:-55°C; Tensione Vgs Max:20V; Tipo di Transistor:Power MOSFET

Market price

型號	製造商	描述	庫存	價格
IPD060N03LGATMA1 DISTI # V72:2272_06390994	Infineon Technologies AG	Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	1400	1000:$0.3182 500:$0.3646 250:$0.3892 100:$0.3935 25:$0.5574 10:$0.5645 1:$0.6548
IPD060N03LGATMA1 DISTI # IPD060N03LGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 50A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1736In Stock	1000:$0.4059 500:$0.5074 100:$0.6849 10:$0.8880 1:$1.0100
IPD060N03LGATMA1 DISTI # IPD060N03LGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 50A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1736In Stock	1000:$0.4059 500:$0.5074 100:$0.6849 10:$0.8880 1:$1.0100
IPD060N03LGATMA1 DISTI # IPD060N03LGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 50A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.3571
IPD060N03LGATMA1 DISTI # 30720096	Infineon Technologies AG	Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2479	25000:$0.3321 15000:$0.3330 10000:$0.3340 2500:$0.3349
IPD060N03LGATMA1 DISTI # 26195697	Infineon Technologies AG	Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	1400	1000:$0.3182 500:$0.3646 250:$0.3892 100:$0.3935 25:$0.5574 23:$0.5645
IPD060N03LGATMA1 DISTI # IPD060N03LGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD060N03LGATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 2500	2500:$0.3489 5000:$0.3489 10000:$0.3479 15000:$0.3469 25000:$0.3459
IPD060N03LGATMA1 DISTI # IPD060N03LGBTMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD060N03LGBTMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3219 5000:$0.3099 10000:$0.2989 15000:$0.2889 25000:$0.2839
IPD060N03LGATMA1 DISTI # SP000680632	Infineon Technologies AG	Trans MOSFET N-CH 30V 50A 3-Pin TO-252 T/R (Alt: SP000680632) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.4839 5000:€0.4159 10000:€0.3539 15000:€0.3039 25000:€0.2879
IPD060N03LGATMA1 DISTI # 13AC9039	Infineon Technologies AG	MOSFET, N-CH, 30V, 50A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.005ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power DissipationRoHS Compliant: Yes	1530	1:$0.8400 10:$0.6950 25:$0.6130 50:$0.5300 100:$0.4480 250:$0.4180 500:$0.3890 1000:$0.3590
IPD060N03LGATMA1 DISTI # 726-IPD060N03LGATMA1	Infineon Technologies AG	MOSFET N-Ch 30V 50A DPAK-2 RoHS: Compliant	156	1:$0.8400 10:$0.6950 100:$0.4480 1000:$0.3590 2500:$0.3030
IPD060N03LGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 50A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant	2486	1000:$0.2400 500:$0.2500 100:$0.2600 25:$0.2700 1:$0.2900
IPD060N03LGATMA1	Infineon Technologies AG		3000
IPD060N03LGATMA1 DISTI # IPD060N03LGATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,43A,56W,PG-TO252-3	1989	1:$0.7374 3:$0.4935 10:$0.3964 100:$0.3557 1000:$0.3320
IPD060N03LGATMA1 DISTI # 2725846	Infineon Technologies AG	MOSFET, N-CH, 30V, 50A, TO-252 RoHS: Compliant	1530	5:£0.5970 25:£0.5410 100:£0.3420 250:£0.3050 500:£0.2690
IPD060N03LGATMA1 DISTI # C1S322000529036	Infineon Technologies AG	MOSFETs RoHS: Compliant	1400	250:$0.3901 100:$0.4035 25:$0.5594 10:$0.5691
IPD060N03LGATMA1 DISTI # C1S322000332935	Infineon Technologies AG	Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252 RoHS: Compliant	2500	1000:$0.4680 500:$0.5100 100:$0.6200 50:$0.6960 25:$0.7650 5:$1.9100
IPD060N03LGATMA1 DISTI # 2725846	Infineon Technologies AG	MOSFET, N-CH, 30V, 50A, TO-252 RoHS: Compliant	1530	1:$1.6100 10:$1.4200 100:$1.1000 500:$0.8090 1000:$0.6470

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