IRF6643TR1PBF

Mfr. #:: IRF6643TR1PBF
製造商:: Infineon Technologies
描述:: IGBT Transistors MOSFET MOSFT 150V 35A 35mOhm 39nC Qg
生命週期:: 製造商新產品
數據表:: IRF6643TR1PBF 數據表
交貨:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRF6643TR1PBF Datasheet IRF6643TR1PBF Datasheet (P4-P6)IRF6643TR1PBF Datasheet (P7-P9)
ECAD Model:

產品屬性
屬性值

製造商: 國際整流器

產品分類: 晶體管 - FET、MOSFET - 單

打包: 捲軸

安裝方式: 貼片/貼片

包裝盒: DirectFET-7

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 89 W

最高工作溫度: + 150 C

秋季時間: 4.4 ns

上升時間: 5 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 6.2 A

Vds-漏-源-擊穿電壓: 150 V

VGS-th-Gate-Source-Threshold-Voltage: 4.9 V

Rds-On-Drain-Source-Resistance: 29 mOhms

晶體管極性: N通道

Qg-門電荷: 39 nC

正向跨導最小值: 16 S

Tags: IRF6643, IRF664, IRF66, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6643TR1PBF 描述

***ical: Trans MOSFET N-CH 150V 6.2A 7-Pin Direct-FET MZ T/R

***ernational Rectifier: A 150V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 35 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ment14 APAC: MOSFET, N, DIRECTFET; Transistor Polarity:N Channel; Continuous Drain Current Id:6.2A; Drain Source Voltage Vds:150V; On Resistance Rds(on):34.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET; No. of Pins:7; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:50mJ; Base Number:6643; Cont Current Id @ 70°C:5A; Current Id Max:6.2A; Fall Time tf:4.4ns; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Package / Case:MZ; Power Dissipation Pd:2.8mW; Pulse Current Idm:76A; Rise Time:5ns; Storage Temperature Max:150°C; Storage Temperature Min:-40°C; Termination Type:SMD; Voltage Vds:150V; Voltage Vds Typ:150V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Market price

型號	製造商	描述	庫存	價格
IRF6643TR1PBF DISTI # IRF6643TR1PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 150V 6.2A DIRECTFET RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6643TR1PBF DISTI # IRF6643TR1PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 150V 6.2A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF6643TR1PBF DISTI # IRF6643TR1PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 150V 6.2A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF6643TR1PBF DISTI # 70018845	Infineon Technologies AG	600V FAST 1-8 KHZ COPACK IGBT IN A TO-220AB PACKAGE RoHS: Compliant	0	1000:$2.3400 2000:$2.1400
IRF6643TR1PBF DISTI # 942-IRF6643TR1PBF	Infineon Technologies AG	MOSFET MOSFT 150V 35A 35mOhm 39nC Qg RoHS: Compliant	0
IRF6643TR1PBF	International Rectifier		922
IRF6643TR1PBF	International Rectifier	6.2A, 150V, 0.0345OHM, N-CHANNEL, SI, POWER, MOSFET	9	9:$2.2500 3:$3.0000 1:$4.5000
IRF6643TR1PBF	International Rectifier	RoHS: Compliant	Europe - 4000
IRF6643TR1PBF DISTI # 1385503	Infineon Technologies AG	MOSFET, N, DIRECTFET RoHS: Compliant	0	1:$6.0300 10:$3.4600 100:$3.2700 250:$3.0600 500:$2.9300 1000:$2.8900

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