FF800R17KP4B2NOSA2

Mfr. #:: FF800R17KP4B2NOSA2
製造商:: Infineon Technologies
描述:: IGBT MODULE 1700V 800A
生命週期:: 製造商新產品
數據表:: FF800R17KP4B2NOSA2 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

產品屬性
屬性值

Tags: FF800R17KP, FF800R17, FF800R, FF800, FF80, FF8

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FF800R17KP4B2NOSA2 描述

***ical: Trans IGBT Module N-CH 1700V 1.2KA 4850000mW Automotive 10-Pin IHM130-1 Tray

***ineon: 1700V IHM 130mm Dual IGBT Module with IGBT4, enlarged diode and AlSiC base-plate - The best solution for your traction and industry applications | Summary of Features: Low V(cesat); Enlarged Diode for regenerative operation; 4 kV AC 1min Insulation; AlSiC Base Plate for increased Thermal Cycling Capability; UL recognised; High Power and Thermal Cycling Capability | Benefits: High power density for compact inverter designs; Standardized housing | Target Applications: drives; wind; traction; cav

***ment14 APAC: IGBT, DUAL MOD, 1700V, 800A; Module Configuration:Dual; Transistor Polarity:N Channel; DC Collector Current:800A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:4.85kW; Collector Emitter Voltage V(br)ceo:1.7kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Module; No. of Pins:10; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:4.85kW

Market price

型號	製造商	描述	庫存	價格
FF800R17KP4B2NOSA2 DISTI # FF800R17KP4B2NOSA2-ND	Infineon Technologies AG	IGBT MODULE 1700V 800A RoHS: Compliant Min Qty: 2 Container: Tray	Temporarily Out of Stock	2:$973.7250
FF800R17KP4B2NOSA2 DISTI # FF800R17KP4B2NOSA2	Infineon Technologies AG	TRACTION - Bulk (Alt: FF800R17KP4B2NOSA2) RoHS: Not Compliant Min Qty: 1 Container: Bulk	Americas - 0	1000:$895.0900 500:$911.2900 100:$943.0900 50:$978.3900 25:$992.1900 10:$1,006.3900 1:$1,020.9900
FF800R17KP4B2NOSA2 DISTI # FF800R17KP4B2NOSA2	Infineon Technologies AG	TRACTION - Trays (Alt: FF800R17KP4B2NOSA2) RoHS: Not Compliant Min Qty: 2 Container: Tray	Americas - 0	20:$909.3900 12:$931.7900 8:$955.3900 4:$980.1900 2:$993.0900
FF800R17KP4_B2 DISTI # 641-FF800R17KP4_B2	Infineon Technologies AG	IGBT Modules IGBT 1700V 800A	4	1:$943.5300 5:$928.4500
FF800R17KP4B2NOSA2	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, N-Channel RoHS: Not Compliant	2	1000:$926.9700 500:$975.7600 100:$1,015.8600 25:$1,059.4000 1:$1,140.8900

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