S29GL01GS10DHI020

Mfr. #:: S29GL01GS10DHI020
製造商:: Cypress Semiconductor
描述:: NOR Flash 1G 3V 100ns Parallel NOR Flash
生命週期:: 製造商新產品
數據表:: S29GL01GS10DHI020 數據表
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更多信息:: S29GL01GS10DHI020 更多信息 S29GL01GS10DHI020 Product Details

產品屬性
屬性值

製造商：: 賽普拉斯半導體

產品分類：: NOR閃存

RoHS：: Y

安裝方式：: 貼片/貼片

包裝/案例：: FBGA-64

系列：: S29GL01G/512/256/128S

內存大小：: 1 Gbit

接口類型：: 平行線

組織：: 64 M x 16

計時類型：: 異步

數據總線寬度：: 16 bit

電源電壓 - 最小值：: 2.7 V

電源電壓 - 最大值：: 3.6 V

電源電流 - 最大值：: 100 mA

最低工作溫度：: - 40 C

最高工作溫度：: + 85 C

打包：: 托盤

內存類型：: 也不

速度：: 100 ns

建築學：: 蝕

品牌：: 賽普拉斯半導體

濕氣敏感：: 是的

產品類別：: NOR閃存

出廠包裝數量：: 260

子類別：: 內存和數據存儲

商品名：: MirrorBit Eclipse

單位重量：: 0.299511 oz

Tags: S29GL01GS10DHI, S29GL01GS10D, S29GL01GS10, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

S29GL01GS10DHI020 描述

***ress Semiconductor SCT: Parallel NOR Flash Memory, 1024 Mbit Density, 100 ns Initial Access Time, FBGA-64, RoHS

***ow.cn: NOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 100ns 64-Pin Fortified BGA Tray

***et: NOR Flash Parallel 3V/3.3V 1Gbit 64M x 16bit 100ns 64-Pin FBGA Tray

***nell: MEMORY, FLASH, 1GB, 3V, 64BGA; Memory Size:1Gbit; Interface Type:CFI; Access Time:100ns; Supply Voltage Range:2.7V to 3.6V; Memory Case Style:BGA; No. of Pins:64; Operating Temperature Range:-40°C to +85°C; SVHC:No SVHC (18-Jun-2012); IC Generic Number:S29GL01GS

S29GL01GS10DHI020 更多信息

MirrorBit® NOR GL Flash Memory Device: Cypress MirrorBit® GL NOR Flash family is optimized for voltage, density, cost-per-bit, reliability, performance, and scalability needs. With densities from 32MB-2GB, each MirrorBit® Memory Device requires only a single 3.0V power supply for read and write functions. The entire command set compatible with the JEDEC Flash standards.

S29 GL-S MirrorBit® Eclipse™ Flash: Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.

Market price

型號	製造商	描述	庫存	價格
S29GL01GS10DHI020 DISTI # C1S159300580672	Cypress Semiconductor	NOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 100ns 64-Pin FBGA Tray RoHS: Compliant	203	200:$7.4000 100:$7.6700 50:$8.4200 10:$9.5400 1:$13.8000
S29GL01GS10DHI020 DISTI # 1274-1053-ND	Cypress Semiconductor	IC FLASH 1G PARALLEL 64FBGA RoHS: Compliant Min Qty: 1 Container: Tray	Temporarily Out of Stock	1040:$8.0845 520:$8.3633 260:$8.4500 100:$8.8898 50:$10.0978 25:$10.1536 10:$10.3890 1:$11.2200
S29GL01GS10DHI020 DISTI # 39T5693	Cypress Semiconductor	FLASH MEMORY, 1024 MBIT, 100 NS, 64-BGA,Flash Memory Type:Parallel NOR,Memory Size:1Gbit,Flash Memory Configuration:64M x 16bit,IC Interface Type:Parallel,Memory Case Style:FBGA,No. of Pins:64Pins,Clock Frequency:- , RoHS Compliant: Yes	0	1:$9.6300 10:$8.9100 25:$8.7100 50:$8.6600 100:$7.8300 250:$7.6500
S29GL01GS10DHI020 DISTI # 797-S29GL01GS10DHI02	Cypress Semiconductor	NOR Flash 1G 3V 100ns Parallel NOR Flash RoHS: Compliant	0	1:$9.6300 10:$8.9100 25:$8.7100 50:$8.6600 100:$7.8300 250:$7.6500
S29GL01GS10DHI020	Spansion	RoHS: Not Compliant	249	1000:$9.9900 500:$10.5100 100:$10.9400 25:$11.4100 1:$12.2900
S29GL01GS10DHI020 DISTI # 1972436	Cypress Semiconductor	MEMORY, FLASH, 1GB, 3V, 64BGA RoHS: Compliant	0	1:$15.2400 10:$14.1100 25:$13.7900 50:$13.7100 100:$12.7700
S29GL01GS10DHI020 DISTI # 1972436	Cypress Semiconductor	MEMORY, FLASH, 1GB, 3V, 64BGA RoHS: Compliant	0	1:£7.8500 10:£6.7400 25:£6.5900 50:£6.5500 100:£5.9300

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