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IPW60R031CFD7XKSA1

IPW60R031CFD7XKSA1
Mfr. #:
IPW60R031CFD7XKSA1
製造商:
Infineon Technologies
描述:
MOSFET HIGH POWER_NEW
生命週期:
製造商新產品
數據表:
IPW60R031CFD7XKSA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IPW60R031CFD7XKSA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-247-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
63 A
Rds On - 漏源電阻：
26 mOhms
Vgs th - 柵源閾值電壓：
3.5 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
141 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
278 W
配置：
單身的
頻道模式：
增強
商品名：
酷摩
打包：
管子
系列：
CoolMOS CFD7
晶體管類型：
1 N-Channel
品牌：
英飛凌科技
秋季時間：
6 ns
產品類別：
MOSFET
上升時間：
27 ns
出廠包裝數量：
240
子類別：
MOSFET
典型關斷延遲時間：
175 ns
典型的開啟延遲時間：
48 ns
第 # 部分別名：
IPW60R031CFD7 SP001617992
Tags
IPW60R03, IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 Power Transistor High Power 31mΩ 278W 600V PG-TO 247-3
***ark
Mosfet, N-Ch, 600V, 63A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.026Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
型號 製造商 描述 庫存 價格
IPW60R031CFD7XKSA1
DISTI # 33792058		Infineon Technologies AGHIGH POWER_NEW240
  • 2:$7.6931
IPW60R031CFD7XKSA1
DISTI # IPW60R031CFD7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		230In Stock
  • 720:$9.3515
  • 240:$10.5124
  • 25:$11.9312
  • 10:$12.4470
  • 1:$13.5400
IPW60R031CFD7XKSA1
DISTI # V99:2348_18786388		Infineon Technologies AGHIGH POWER_NEW0
  • 240000:$7.6910
  • 120000:$7.6960
  • 24000:$8.4100
  • 2400:$9.8900
  • 240:$10.1500
IPW60R031CFD7XKSA1
DISTI # V36:1790_18786388		Infineon Technologies AGHIGH POWER_NEW0
  • 240000:$7.1550
  • 120000:$7.1600
  • 24000:$8.0130
  • 2400:$9.8280
  • 240:$10.1500
IPW60R031CFD7XKSA1
DISTI # IPW60R031CFD7XKSA1		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 31mΩ 278W 600V PG-TO 247-3 - Bulk (Alt: IPW60R031CFD7XKSA1)
Min Qty: 45
Container: Bulk		Americas - 0
  • 450:$7.0900
  • 225:$7.1900
  • 135:$7.4900
  • 90:$7.7900
  • 45:$7.9900
IPW60R031CFD7XKSA1
DISTI # IPW60R031CFD7XKSA1		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 31mΩ 278W 600V PG-TO 247-3 - Rail/Tube (Alt: IPW60R031CFD7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$7.7900
  • 1440:$7.8900
  • 960:$8.1900
  • 480:$8.4900
  • 240:$8.7900
IPW60R031CFD7XKSA1
DISTI # SP001617992		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 31mΩ 278W 600V PG-TO 247-3 (Alt: SP001617992)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€6.7900
  • 500:€7.2900
  • 100:€7.4900
  • 50:€7.7900
  • 25:€8.0900
  • 10:€8.4900
  • 1:€9.1900
IPW60R031CFD7XKSA1
DISTI # 43AC9329		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 31mΩ 278W 600V PG-TO 247-3 - Bulk (Alt: 43AC9329)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
    IPW60R031CFD7XKSA1
    DISTI # 43AC9329    		Infineon Technologies AGMOSFET, N-CH, 600V, 63A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:63A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes20
    • 500:$9.8900
    • 250:$10.5800
    • 100:$11.1200
    • 50:$11.8700
    • 25:$12.6200
    • 10:$13.1700
    • 1:$14.3200
    IPW60R031CFD7XKSA1
    DISTI # 726-IPW60R031CFD7XKS    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		1995
    • 1:$12.8900
    • 10:$11.8500
    • 25:$11.3600
    • 100:$10.0100
    • 250:$9.5200
    • 500:$8.9000
    IPW60R031CFD7XKSA1Infineon Technologies AGPower Field-Effect Transistor, 63A I(D), 600V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
    RoHS: Compliant    		1
    • 1000:$7.4000
    • 500:$7.7800
    • 100:$8.1000
    • 25:$8.4500
    • 1:$9.1000
    IPW60R031CFD7XKSA1
    DISTI # 2807984    		Infineon Technologies AGMOSFET, N-CH, 600V, 63A, TO-2471596
    • 100:£7.7200
    • 50:£8.2400
    • 10:£8.7600
    • 5:£9.9400
    • 1:£10.4500
    IPW60R031CFD7XKSA1
    DISTI # 2807984    		Infineon Technologies AGMOSFET, N-CH, 600V, 63A, TO-247
    RoHS: Compliant    		1338
    • 720:$14.1000
    • 240:$15.8500
    • 25:$17.9900
    • 10:$18.7600
    • 1:$20.4000
    圖片 型號 描述
    INA194AIDBVT

    Mfr.#: INA194AIDBVT

    OMO.#: OMO-INA194AIDBVT

    		 Current & Power Monitors & Regulators Vltg Out Hi-Sd Msmnt Current Shunt Mntr
    IRS2110PBF

    Mfr.#: IRS2110PBF

    OMO.#: OMO-IRS2110PBF

    		 Gate Drivers Hi&Lw Sd Drvr All HiVolt Pins 1 Sd
    STW24N60M6

    Mfr.#: STW24N60M6

    OMO.#: OMO-STW24N60M6

    		 MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a TO-247 package
    STF26N60DM6

    Mfr.#: STF26N60DM6

    OMO.#: OMO-STF26N60DM6

    		 MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM6 Power MOSFET in TO-220FP package
    TSM60NB041PW C1G

    Mfr.#: TSM60NB041PW C1G

    OMO.#: OMO-TSM60NB041PW-C1G

    		 MOSFET MOSFET, Single, N-Ch SJ G2, 600V, 78A
    INA194AIDBVT

    Mfr.#: INA194AIDBVT

    OMO.#: OMO-INA194AIDBVT-TEXAS-INSTRUMENTS

    		 Current & Power Monitors & Regulators Vltg Out Hi-Sd Msmnt Current Shunt Mnt
    IRS2110PBF

    Mfr.#: IRS2110PBF

    OMO.#: OMO-IRS2110PBF-INFINEON-TECHNOLOGIES

    		 Gate Drivers Hi&Lw Sd Drvr All HiVolt Pins 1 Sd
    NUCLEO-L476RG

    Mfr.#: NUCLEO-L476RG

    OMO.#: OMO-NUCLEO-L476RG-STMICROELECTRONICS

    		 STM32L476RGT6 Microcontroller Development Board 512KB Flash Win 7/Win 8/Win Vista/Win XP OS
    5018

    Mfr.#: 5018

    OMO.#: OMO-5018-KEYSTONE-ELECTRONICS

    		 SM TEST POINT - COMPACT
    可用性
    庫存:
    Available
    訂購:
    1985
    輸入數量:
    IPW60R031CFD7XKSA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$12.89
    US$12.89
    10
    US$11.85
    US$118.50
    25
    US$11.36
    US$284.00
    100
    US$10.01
    US$1 001.00
    250
    US$9.52
    US$2 380.00
    500
    US$8.90
    US$4 450.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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