CG2H80120D-GP4

CG2H80120D-GP4
Mfr. #:
CG2H80120D-GP4
製造商:
N/A
描述:
RF JFET Transistors GaN HEMT Bare Die 28V DC-8.0GHz 120W
生命週期:
製造商新產品
數據表:
CG2H80120D-GP4 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商:
馬科姆
產品分類:
射頻 JFET 晶體管
RoHS:
Y
晶體管類型:
場效應管
技術:
砷化鎵
獲得:
20.5 dB
Vds - 漏源擊穿電壓:
8 V
Id - 連續漏極電流:
375 mA
最低工作溫度:
- 40 C
最高工作溫度:
+ 85 C
安裝方式:
貼片/貼片
包裝/案例:
PQFN-20
打包:
捲軸
工作頻率:
1 GHz
工作溫度範圍:
- 40 C to + 85 C
產品:
射頻結型場效應管
類型:
GaAs MESFET
品牌:
馬科姆
NF - 噪聲係數:
5.5 dB
P1dB - 壓縮點:
26 dBm
產品類別:
射頻 JFET 晶體管
出廠包裝數量:
1000
子類別:
晶體管
Tags
CG2H8, CG2H, CG2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
圖片 型號 描述
CG2H80120D-GP4

Mfr.#: CG2H80120D-GP4

OMO.#: OMO-CG2H80120D-GP4

RF JFET Transistors GaN HEMT Bare Die 28V DC-8.0GHz 120W
可用性
庫存:
Available
訂購:
4500
輸入數量:
CG2H80120D-GP4的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
50
US$152.84
US$7 642.00
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