CY14V101QS-SE108XQ

Mfr. #:: CY14V101QS-SE108XQ
製造商:: Cypress Semiconductor
描述:: NVRAM 1-Mbit (128KX8) Quad SPI nvSRAM
生命週期:: 製造商新產品
數據表:: CY14V101QS-SE108XQ 數據表
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更多信息:: CY14V101QS-SE108XQ 更多信息 CY14V101QS-SE108XQ Product Details

產品屬性
屬性值

製造商：: 賽普拉斯半導體

產品分類：: NVRAM

RoHS：: Y

包裝/案例：: SOIC-16

接口類型：: SPI

內存大小：: 1 Mbit

組織：: 128 k x 8

數據總線寬度：: 8 bit

電源電壓 - 最大值：: 3.6 V

電源電壓 - 最小值：: 2.7 V

工作電源電流：: 33 mA

最低工作溫度：: - 40 C

最高工作溫度：: + 105 C

系列：: CY14V101

打包：: 管子

品牌：: 賽普拉斯半導體

安裝方式：: 貼片/貼片

濕氣敏感：: 是的

Pd - 功耗：: 1 W

產品類別：: NVRAM

出廠包裝數量：: 92

子類別：: 內存和數據存儲

單位重量：: 0.023492 oz

Tags: CY14V101QS-SE, CY14V101QS-S, CY14V101QS, CY14V101Q, CY14V101, CY14V10, CY14V1, CY14V, CY14, CY1

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CY14V101QS-SE108XQ 描述

***ical: NVRAM NVSRAM Serial-SPI 1Mbit 3V 16-Pin SOIC W Tube

***ark: Nv Sram, 128K X 8Bit, Soic-16 Rohs Compliant: Yes

***ress Semiconductor SCT: Nonvolatile SRAM, 1024 Kb Density, SOP-16, RoHS

***et: 1MB NVSRAM WITH A QUAD SERIAL PERIPHERAL INTERFACE

***NGYU ELECTRONICS: IC NVSRAM 1M SPI 108MHZ 16SOIC

***S: nvSRAM, 1Mb, QSPI, Up to 108MHz, 2.7/3.6V, SOIC(16), -40°C to 85°C, Tube

***ow.cn: NVRAM NVSRAM Serial-SPI 1Mbit 3V/3.3V 16-Pin SOIC W Tube

***ress Semiconductor SCT: Nonvolatile SRAM, 1024 Kb Density, SOP-16, RoHS

***et: 1MB NVSRAM WITH A QUAD SERIAL PERIPHERAL INTERFACE

***NGYU ELECTRONICS: IC NVSRAM 1M SPI 108MHZ 16SOIC

***ark: Nv Sram, 1Mbit, Soic-16; Memory Size:1Mbit; Memory Organisation:128K X 8Bit; Read Access Time:10Ns; Write Access Time:10Ns; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:soic; No. Of Pins:16Pins; Ic Interface Rohs Compliant: Yes

***ure Electronics: CY14B101 Series 1 Mb (128 K x 8) 3.6 V Surface Mount nvSRAM - SOIC-16

***ow.cn: NVRAM NVSRAM Serial-SPI 1Mbit 3.3V 16-Pin SOIC W Tube

***ress Semiconductor SCT: Nonvolatile SRAM, 1024 Kb Density, SOP-16, RoHS

***i-Key: IC NVSRAM 1MBIT SPI 40MHZ 16SOIC

***DA Technology Co., Ltd.: Product Description Demo for Development.

***ark: Nvram, Sram, 1Mbit, -40 To 85Deg C; Memory Type:sram; Memory Size:1Mbit; Nvram Memory Configuration:128K X 8Bit; Ic Interface Type:serial, Spi; Access Time:-; Memory Case Style:soic; No. Of Pins:16Pins; Supply Voltage Min:2.7V Rohs Compliant: Yes

***ure Electronics: CY14B101Q Series 3 V 1 Mb (128 K × 8) Autostore nvSRAM - SOIC-8

***ical: NVRAM NVSRAM Serial-SPI 1Mbit 3.3V 8-Pin SOIC N Tube

***ress Semiconductor SCT: Nonvolatile SRAM, 1024 Kb Density, SOP-8, RoHS

***ment14 APAC: NV SRAM, PARALLEL, 1MBIT, SOIC-8

***i-Key: IC NVSRAM 1MBIT SPI 40MHZ 8SOIC

***DA Technology Co., Ltd.: Product Description Demo for Development.

***ponent Stockers USA: 128K X 8 NON-VOLATILE SRAM PDSO8

***ark: Nv Sram, Parallel, 1Mbit, Soic-8; Memory Size:1Mbit; Memory Organisation:128K X 8Bit; Read Access Time:45Ns; Write Access Time:45Ns; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:soic; No. Of Pins:8Pins; Ic Rohs Compliant: Yes

***S: Asynchronous SRAM, 4Mb, 512Kx8, 45ns, 3V, TSOPII(32), -40°C to 85°C, Tray

***nell: SRAM, 4MBIT, -40 TO 85DEG C; Memory Size: 4Mbit; SRAM Memory Configuration: 512K x 8bit; Supply Voltage Range: 2.7V to 3.6V; Memory Case Style: TSOP-II; No. of Pins: 32Pins; Access Time: 45ns; Operating Temperature Min: -40°C;

***esas: Single 3V supply: 2.7V to 3.6V Access time: 45ns (max.) Current consumption: Standby: 0.4µA (typ.) Equal access and cycle times Common data input and output Three state output Directly TTL compatible All inputs and outputs Battery backup operation

CY14V101QS-SE108XQ 更多信息

CY14V101 1-Mb Quad SPI nvSRAM: Cypress Semiconductor CY14V101 1-Mbit (128K × 8) Quad SPI nvSRAM couples a 1-Mbit nvSRAM with a QPI interface. The QPI enables writing and reading of the memory in either a single (one I/O channel for one bit per clock cycle), dual (two I/O channels for two bits per clock cycle), or quad (four I/O channels for four bits per clock cycle) through the use of specific opcodes. The memory is organized as 128Kbytes each consisting of SRAM and nonvolatile SONOS FLASH Quantum Trap cells. The SRAM provides infinite read and write cycles, while the nonvolatile cells provide storage of data. Data transfers from SRAM to the nonvolatile cells (STORE operation) occur automatically at power-down. On power-up, data is restored to the SRAM from the nonvolatile cells (RECALL operation). Users may also initiate the STORE and RECALL operations through SPI instructions.Learn More

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