MR2A08ACYS35

Mfr. #:: MR2A08ACYS35
製造商:: Everspin Technologies
描述:: NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
生命週期:: 製造商新產品
數據表:: MR2A08ACYS35 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: MR2A08ACYS35 更多信息

產品屬性
屬性值

製造商: Everspin 技術公司

產品分類: 記憶

系列: MR2A08A

打包: 托盤替代包裝

安裝方式: 貼片/貼片

包裝盒: TSOP-44

工作溫度: -40°C ~ 85°C (TA)

界面: 平行線

電壓供應: 3 V ~ 3.6 V

供應商-設備-包: 44-TSOP2 (10.2x18.4)

內存大小: 4M (512K x 8)

內存型: MRAM（磁阻RAM）

速度: 35ns

訪問時間: 35 ns

格式化內存: 內存

最高工作溫度: + 85 C

最低工作溫度: - 40 C

工作電源電流: 50 mA

接口類型: 平行線

組織: 512 k x 8

數據總線寬度: 8 bit

最大電源電壓: 3.6 V

電源電壓最小值: 3 V

Tags: MR2A08AC, MR2A0, MR2A, MR2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MR2A08ACYS35 評級和評論

M***o

Thank you.

2019-05-10

B***d

Good product - god price - slow shipping compared to other suppliers

2019-06-25

MR2A08ACYS35 描述

***ure Electronics: MR2A08 Series 512 K x 8 Bit 3.3 V 35 ns Asynchronous MRAM Memory - TSOP II-44

***ical: MRAM 4Mbit Parallel Interface 3.3V 44-Pin TSOP-II Tray

***i-Key: IC RAM 4MBIT PARALLEL 44TSOP2

MR2A08ACYS35 更多信息

MR2A08A / MR2A16A 4Mb Parallel MRAM: Everspin Technologies MR2A08A and MR2A16A 4Mb Parallel MRAM devices offer SRAM compatible 35ns read/write timing with unlimited endurance. The MR2A08A series products are 4,194,304-bit Magnetoresistive Random Access Memory (MRAM) devices organized as 524,288 words of 8 bits.

Magnetoresistive Random Access Memory (MRAM): Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Everspin MRAM

Market price

型號	製造商	描述	庫存	價格
MR2A08ACYS35 DISTI # 819-1003-ND	Everspin Technologies	IC RAM 4M PARALLEL 44TSOP2 RoHS: Compliant Min Qty: 1 Container: Tray	841In Stock	540:$17.6757 270:$17.8219 135:$18.4465 50:$21.0114 25:$21.5432 10:$21.7820 1:$23.3900
MR2A08ACYS35R DISTI # MR2A08ACYS35R-ND	Everspin Technologies	IC RAM 4M PARALLEL 44TSOP2 RoHS: Compliant Min Qty: 1500 Container: Tape & Reel (TR)	Temporarily Out of Stock	1500:$17.8619
MR2A08ACYS35 DISTI # 936-MR2A08ACYS35	Everspin Technologies	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM RoHS: Compliant	389	1:$23.3900 5:$22.7000 10:$21.7800 25:$21.5400 50:$21.0100 100:$18.4500 250:$17.8200
MR2A08ACYS35R DISTI # 936-MR2A08ACYS35R	Everspin Technologies	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM RoHS: Compliant	0	1500:$17.8600

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	Mfr.#: MR2A08ACYS35 OMO.#: OMO-MR2A08ACYS35-EVERSPIN-TECHNOLOGIES	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08ACMA35 OMO.#: OMO-MR2A08ACMA35-EVERSPIN-TECHNOLOGIES	IC RAM 4M PARALLEL 48FBGA
	Mfr.#: MR2A08AYS35 OMO.#: OMO-MR2A08AYS35-EVERSPIN-TECHNOLOGIES	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM