TGF2023-2-10

TGF2023-2-10
Mfr. #:
TGF2023-2-10
製造商:
Qorvo
描述:
RF JFET Transistors DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB
生命週期:
製造商新產品
數據表:
TGF2023-2-10 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
TGF2023-2-10 更多信息
產品屬性
屬性值
製造商:
科沃
產品分類:
射頻 JFET 晶體管
RoHS:
Y
晶體管類型:
HEMT
技術:
氮化鎵碳化矽
獲得:
18 dB
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
36 V
Vgs - 柵源擊穿電壓:
145 V
Id - 連續漏極電流:
24 A
輸出功率:
260 W
最大漏柵電壓:
48 V
最高工作溫度:
+ 250 C
Pd - 功耗:
288 W
安裝方式:
貼片/貼片
打包:
托盤
配置:
單身的
工作頻率:
2 GHz
產品:
射頻功率晶體管
系列:
T1G
類型:
氮化鎵碳化矽 HEMT
品牌:
科沃
濕氣敏感:
是的
產品類別:
射頻 JFET 晶體管
出廠包裝數量:
25
子類別:
晶體管
第 # 部分別名:
1110346
Tags
TGF2023-2, TGF2023, TGF202, TGF20, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, 0 to 18 GHz, 50 W, 11.5 dB, 28 V, DIE, GaN
***horized Procurement Solutions
OEMs, CMs ONLY (NO BROKERS)
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF2023 GaN HEMT Transistors
Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm GaN on SiC HEMT which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. These devices typically provide between 38-50.5dBm of saturated output power with power gain from 17.5dB and up to 21db at 3GHz. The maximum power added efficiency is between 52-78.3% which makes the these devices appropriate for high efficiency applications.Learn More
型號 製造商 描述 庫存 價格
TGF2023-2-10
DISTI # 772-TGF2023-2-10
QorvoRF JFET Transistors DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB
RoHS: Compliant
0
  • 50:$71.5800
  • 100:$63.2500
1099951
DISTI # TGF2023-2-10
QorvoRF POWER TRANSISTOR
RoHS: Compliant
0
  • 1:$59.3200
圖片 型號 描述
TGF2023-2-05

Mfr.#: TGF2023-2-05

OMO.#: OMO-TGF2023-2-05

RF JFET Transistors DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB
TGF2021-04-SD T/R

Mfr.#: TGF2021-04-SD T/R

OMO.#: OMO-TGF2021-04-SD-T-R-318

RF JFET Transistors DC-4GHz 5Volts
TGF2023-2-05

Mfr.#: TGF2023-2-05

OMO.#: OMO-TGF2023-2-05-318

RF JFET Transistors DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB
TGF2022-48

Mfr.#: TGF2022-48

OMO.#: OMO-TGF2022-48-318

RF JFET Transistors DC-20GHz 4.8mm Pwr pHEMT (0.35um)
TGF2023-2-20

Mfr.#: TGF2023-2-20

OMO.#: OMO-TGF2023-2-20-318

RF JFET Transistors DC-18GHZ 90W TQGaN25 PAE 70.5% Gain 19dB
TGF2023-2-02

Mfr.#: TGF2023-2-02

OMO.#: OMO-TGF2023-2-02-318

RF JFET Transistors DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
TGF2021-04-SD-T/R

Mfr.#: TGF2021-04-SD-T/R

OMO.#: OMO-TGF2021-04-SD-T-R-1190

全新原裝
TGF2021-08-SG

Mfr.#: TGF2021-08-SG

OMO.#: OMO-TGF2021-08-SG-1152

RF JFET Transistors 20-4000MHz Gain 12dB 12.5Volts Pwr 7 dBm
TGF202104SD

Mfr.#: TGF202104SD

OMO.#: OMO-TGF202104SD-1190

全新原裝
TGF2023-05

Mfr.#: TGF2023-05

OMO.#: OMO-TGF2023-05-1152

RF JFET Transistors 5.0mm GaN Discrete
可用性
庫存:
200
訂購:
2183
輸入數量:
TGF2023-2-10的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
50
US$71.58
US$3 579.00
100
US$63.25
US$6 325.00
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