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IPD30N10S3L-34

IPD30N10S3L-34
Mfr. #:
IPD30N10S3L-34
製造商:
Infineon Technologies
描述:
IGBT Transistors MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
生命週期:
製造商新產品
數據表:
IPD30N10S3L-34 數據表
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更多信息:
IPD30N10S3L-34 更多信息
產品屬性
屬性值
製造商
英飛凌科技
產品分類
FET - 單
系列
優化MOS
打包
Digi-ReelR 替代包裝
部分別名
IPD30N10S3L34ATMA1 IPD30N10S3L34XT SP000261248
單位重量
0.139332 oz
安裝方式
貼片/貼片
商品名
優化MOS
包裝盒
TO-252-3, DPak (2 Leads + Tab), SC-63
技術
矽
工作溫度
-55°C ~ 175°C (TJ)
安裝型
表面貼裝
通道數
1 Channel
供應商-設備-包
PG-TO252-3
配置
單身的
FET型
MOSFET N 溝道，金屬氧化物
最大功率
57W
晶體管型
1 N-Channel
漏源電壓 Vdss
100V
輸入電容-Ciss-Vds
1976pF @ 25V
FET-Feature
標準
Current-Continuous-Drain-Id-25°C
30A (Tc)
Rds-On-Max-Id-Vgs
31 mOhm @ 30A, 10V
Vgs-th-Max-Id
2.4V @ 29μA
柵極電荷-Qg-Vgs
31nC @ 10V
鈀功耗
57 W
最高工作溫度
+ 175 C
最低工作溫度
- 55 C
秋季時間
3 ns
上升時間
4 ns
VGS-柵極-源極-電壓
20 V
Id 連續漏極電流
30 A
Vds-漏-源-擊穿電壓
100 V
Rds-On-Drain-Source-Resistance
31 mOhms
晶體管極性
N通道
典型關斷延遲時間
18 ns
典型開啟延遲時間
6 ns
通道模式
增強
Tags
IPD30N10S3L-3, IPD30N10, IPD30N1, IPD30N, IPD30, IPD3, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
型號 製造商 描述 庫存 價格
IPD30N10S3L34ATMA1
DISTI # V72:2272_06390917		Infineon Technologies AGTrans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		11
  • 2501:$0.3198
  • 75000:$0.3419
  • 30000:$0.3420
  • 15000:$0.3421
  • 6000:$0.3422
  • 3000:$0.3423
  • 1:$0.3485
  • 1000:$0.3798
  • 500:$0.4838
  • 250:$0.5209
  • 100:$0.5461
  • 50:$0.6014
  • 25:$0.6683
  • 10:$0.6937
IPD30N10S3L34ATMA1
DISTI # IPD30N10S3L34ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 30A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		13997In Stock
  • 1000:$0.4551
  • 500:$0.5765
  • 100:$0.7434
  • 10:$0.9410
  • 1:$1.0600
IPD30N10S3L34ATMA1
DISTI # IPD30N10S3L34ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 30A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		13997In Stock
  • 1000:$0.4551
  • 500:$0.5765
  • 100:$0.7434
  • 10:$0.9410
  • 1:$1.0600
IPD30N10S3L34ATMA1
DISTI # IPD30N10S3L34ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 30A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		12500In Stock
  • 2500:$0.4124
IPD30N10S3L34ATMA1
DISTI # 19522544		Infineon Technologies AGTrans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 2500:$0.3314
IPD30N10S3L-34
DISTI # IPD30N10S3L-34		Infineon Technologies AGTrans MOSFET N-CH 100V 30A 3-Pin TO-252 T/R (Alt: IPD30N10S3L-34)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
  • 2500:$0.3657
  • 5000:$0.3556
  • 7500:$0.3459
  • 12500:$0.3368
  • 25000:$0.3325
  • 62500:$0.3282
  • 125000:$0.3241
IPD30N10S3L34ATMA1
DISTI # IPD30N10S3L34ATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD30N10S3L34ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.3849
  • 2502:$0.3709
  • 5002:$0.3579
  • 12500:$0.3459
  • 25000:$0.3399
IPD30N10S3L34ATMA1
DISTI # SP000261248		Infineon Technologies AGTrans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-252 (Alt: SP000261248)
RoHS: Compliant
Min Qty: 2500		Europe - 0
  • 2500:€0.5719
  • 5000:€0.4849
  • 10000:€0.4319
  • 15000:€0.3889
  • 25000:€0.3609
IPD30N10S3L34ATMA1
DISTI # 79X1436		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, TO-252- 3,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0258ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes0
  • 1000:$0.4020
  • 500:$0.5090
  • 250:$0.5430
  • 100:$0.5760
  • 50:$0.6340
  • 25:$0.6920
  • 10:$0.7500
  • 1:$0.8800
IPD30N10S3L34ATMA1
DISTI # 726-IPD30N10S3L34ATM		Infineon Technologies AGMOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
RoHS: Compliant		374
  • 1:$0.8800
  • 10:$0.7500
  • 100:$0.5760
  • 500:$0.5090
  • 1000:$0.4020
  • 2500:$0.3570
IPD30N10S3L-34
DISTI # 726-IPD30N10S3L34		Infineon Technologies AGMOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
RoHS: Compliant		0
  • 1:$0.8800
  • 10:$0.7500
  • 100:$0.5760
  • 500:$0.5090
  • 1000:$0.4020
  • 2500:$0.3570
IPD30N10S3L34ATMA1
DISTI # 7533018		Infineon Technologies AGMOSFET N-CH 100V 30A OPTIMOS-T TO252, PK180
  • 10:£0.6120
  • 30:£0.4690
  • 130:£0.3680
  • 630:£0.3220
  • 1250:£0.2850
IPD30N10S3L34ATMA1
DISTI # 7533018P		Infineon Technologies AGMOSFET N-CH 100V 30A OPTIMOS-T TO252, RL1050
  • 30:£0.4690
  • 130:£0.3680
  • 630:£0.3220
  • 1250:£0.2850
IPD30N10S3L-34Infineon Technologies AGPOWER FIELD-EFFECT TRANSISTOR, 30A I(D), 100V, 0.0418OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AB50
    IPD30N10S3L-34
    DISTI # TMOSP9762    		Infineon Technologies AGN-CH 100V30A31mOhm TO252-3
    RoHS: Compliant    		Stock DE - 0Stock US - 0
    • 2500:$0.5487
    • 5000:$0.5173
    • 7500:$0.4860
    • 10000:$0.4390
    • 15000:$0.4233
    IPD30N10S3L34ATMA1
    DISTI # 2432729    		Infineon Technologies AGMOSFET, N CH, 100V, 30A, TO-252-3
    RoHS: Compliant    		0
    • 500:£0.3250
    • 250:£0.3490
    • 100:£0.3720
    • 25:£0.4740
    • 5:£0.6180
    IPD30N10S3L34ATMA1
    DISTI # 2432729RL    		Infineon Technologies AGMOSFET, N CH, 100V, 30A, TO-252-3
    RoHS: Compliant    		0
    • 2500:$0.5650
    • 1000:$0.6370
    • 500:$0.8060
    • 100:$0.9120
    • 10:$1.1900
    • 1:$1.4000
    IPD30N10S3L34ATMA1
    DISTI # 2432729    		Infineon Technologies AGMOSFET, N CH, 100V, 30A, TO-252-3
    RoHS: Compliant    		0
    • 2500:$0.5650
    • 1000:$0.6370
    • 500:$0.8060
    • 100:$0.9120
    • 10:$1.1900
    • 1:$1.4000
    圖片 型號 描述
    IPD30N12S3L31ATMA1

    Mfr.#: IPD30N12S3L31ATMA1

    OMO.#: OMO-IPD30N12S3L31ATMA1

    		 MOSFET N-CHANNEL 100+
    IPD30N10S3L-34

    Mfr.#: IPD30N10S3L-34

    OMO.#: OMO-IPD30N10S3L-34

    		 MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
    IPD30N10S3L34ATMA1

    Mfr.#: IPD30N10S3L34ATMA1

    OMO.#: OMO-IPD30N10S3L34ATMA1

    		 MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
    IPD30N10S3L34ATMA1

    Mfr.#: IPD30N10S3L34ATMA1

    OMO.#: OMO-IPD30N10S3L34ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 100V 30A TO252-3
    IPD30N12S3L31ATMA1

    Mfr.#: IPD30N12S3L31ATMA1

    OMO.#: OMO-IPD30N12S3L31ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CHANNEL_100+
    IPD30N10S3L34ATMA1-CUT TAPE

    Mfr.#: IPD30N10S3L34ATMA1-CUT TAPE

    OMO.#: OMO-IPD30N10S3L34ATMA1-CUT-TAPE-1190

    		 全新原裝
    IPD30N10S3L-34 , 2SD2153

    Mfr.#: IPD30N10S3L-34 , 2SD2153

    OMO.#: OMO-IPD30N10S3L-34-2SD2153-1190

    		 全新原裝
    IPD30N10S3L-34(3N10L34)

    Mfr.#: IPD30N10S3L-34(3N10L34)

    OMO.#: OMO-IPD30N10S3L-34-3N10L34--1190

    		 全新原裝
    IPD30N10S3L-34

    Mfr.#: IPD30N10S3L-34

    OMO.#: OMO-IPD30N10S3L-34-126

    		 IGBT Transistors MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
    可用性
    庫存:
    Available
    訂購:
    2000
    輸入數量:
    IPD30N10S3L-34的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$0.51
    US$0.51
    10
    US$0.49
    US$4.89
    100
    US$0.46
    US$46.31
    500
    US$0.44
    US$218.65
    1000
    US$0.41
    US$411.60
    從...開始
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