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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| RF1S70N06SM9A DISTI # 512-RF1S70N06SM9A | ON Semiconductor | MOSFET TO-263 RoHS: Not compliant | 0 | |
| RF1S70N06SM DISTI # 512-RF1S70N06SM | ON Semiconductor | MOSFET TO-263 RoHS: Not compliant | 0 | |
| RF1S70N06SM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 3200 |
|
| RF1S70N06SM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 1600 |
|
| RF1S70N06 | Harris Semiconductor | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 256 |
|
| RF1S70N06SM | Harris Semiconductor | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 6785 |
|
| F1S70N06 | Harris Semiconductor | 100 | ||
| RF1S70N06SM9A | Fairchild Semiconductor Corporation | 73 | ||
| RF1S70N06SM | f | RoHS: Not Compliant | 350 | |
| RF1S70N06DPAK | HARTING Technology Group | RoHS: Not Compliant | 2000 |
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: F1S70N03 OMO.#: OMO-F1S70N03-1190 |
全新原裝 |
|
|
Mfr.#: F1S70N03 70N03 OMO.#: OMO-F1S70N03-70N03-1190 |
全新原裝 |
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|
Mfr.#: F1S70N06 OMO.#: OMO-F1S70N06-1190 |
全新原裝 |