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NTD3817NT4G

NTD3817NT4G
Mfr. #:
NTD3817NT4G
製造商:
ON Semiconductor
描述:
MOSFET N-CH 16V 7.6A DPAK
生命週期:
製造商新產品
數據表:
NTD3817NT4G 數據表
交貨:
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HTML Datasheet:
NTD3817NT4G DatasheetNTD3817NT4G Datasheet (P4-P6)NTD3817NT4G Datasheet (P7-P8)
ECAD Model:
產品屬性
屬性值
Tags
NTD3817, NTD381, NTD38, NTD3, NTD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power MOSFET 16V, 34.5A Single N-Channel
***ponent Stockers USA
7.6 A 16 V 0.029 ohm N-CHANNEL Si POWER MOSFET
***r Electronics
Power Field-Effect Transistor, 7.6A I(D), 16V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***emi
Power MOSFET 25V 44A 10.9 mOhm Single N Channel DPAK
***et
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Power Field-Effect Transistor, 8.5A I(D), 25V, 0.0109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***emi
Power MOSFET 25 V, 45 A, Single N-Channel, DPAK
***et
Trans MOSFET N-CH 25V 9.2A 3-Pin (2+Tab) DPAK T/R
***ser
MOSFETs- Power and Small Signal 25V 45A N-Channel
***r Electronics
Power Field-Effect Transistor, 7.8A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:45A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):11.7mohm; Rds(on) Test Voltage, Vgs:11.5V; Threshold Voltage, Vgs Typ:1.7V; Power Dissipation, Pd:50W ;RoHS Compliant: Yes
***ser
MOSFETs- Power and Small Signal 25V 45A N-Channel No-Cancel/No-Return
***r Electronics
Power Field-Effect Transistor, 32A I(D), 25V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 25V 7.8A/32A DPAK
*** Electronics
N-CHANNEL POWER MOSFET
***ure Electronics
Single N-Channel 55 V 0.04 Ohm 25 nC HEXFET® Power Mosfet - D2PAK
***(Formerly Allied Electronics)
MOSFET, 55V, 24A, 40 mOhm, 16.7 nC Qg, Logic Level, D-Pak
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***C
Trans MOSFET N-CH 55V 28A 3-Pin(2+Tab) DPAK Trans MOSFET N-CH 55V 28A 3-Pin(2+Tab) DPAK Trans MOSFET N-CH 55V 28A 3-Pin(2+Tab) DPAK
*** Stop Electro
Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***nell
MOSFET, N-CH, 55V, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Di
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 28 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 16 / Fall Time ns = 29 / Rise Time ns = 100 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 8.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 68
***ure Electronics
N-Channel 55 V 35 mOhm OptiMOS® Power-Transistor - PG-TO252-3-11
***ical
Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R
***ineon SCT
55V, N-Ch, 35 mΩ max, Automotive MOSFET, DPAK, OptiMOS™, PG-TO252-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 30A I(D), 55V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, AEC-Q101, N-CH, 55V, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V;
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
型號 製造商 描述 庫存 價格
NTD3817NT4G
DISTI # NTD3817NT4G-ND		ON SemiconductorMOSFET N-CH 16V 7.6A DPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    NTD3817NT4GON SemiconductorPower Field-Effect Transistor, 7.6A I(D), 16V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		75000
    • 1000:$0.1700
    • 500:$0.1800
    • 100:$0.1900
    • 25:$0.2000
    • 1:$0.2100
    圖片 型號 描述
    NTD3808N-1G

    Mfr.#: NTD3808N-1G

    OMO.#: OMO-NTD3808N-1G-ON-SEMICONDUCTOR

    		 MOSFET N-CH 16V 12A IPAK
    NTD3808N-35G

    Mfr.#: NTD3808N-35G

    OMO.#: OMO-NTD3808N-35G-ON-SEMICONDUCTOR

    		 MOSFET N-CH 16V 12A IPAK
    NTD3808NT4G

    Mfr.#: NTD3808NT4G

    OMO.#: OMO-NTD3808NT4G-ON-SEMICONDUCTOR

    		 MOSFET N-CH 16V 12A DPAK
    NTD3813N-1G

    Mfr.#: NTD3813N-1G

    OMO.#: OMO-NTD3813N-1G-ON-SEMICONDUCTOR

    		 MOSFET N-CH 16V 9.6A IPAK
    NTD3813N-35G

    Mfr.#: NTD3813N-35G

    OMO.#: OMO-NTD3813N-35G-ON-SEMICONDUCTOR

    		 MOSFET N-CH 16V 9.6A IPAK
    NTD3813NT4G

    Mfr.#: NTD3813NT4G

    OMO.#: OMO-NTD3813NT4G-ON-SEMICONDUCTOR

    		 MOSFET N-CH 16V 9.6A DPAK
    NTD3817N-1G

    Mfr.#: NTD3817N-1G

    OMO.#: OMO-NTD3817N-1G-ON-SEMICONDUCTOR

    		 MOSFET N-CH 16V 7.6A IPAK
    NTD3817N-35G

    Mfr.#: NTD3817N-35G

    OMO.#: OMO-NTD3817N-35G-ON-SEMICONDUCTOR

    		 MOSFET N-CH 16V 7.6A IPAK
    NTD3817NT4G

    Mfr.#: NTD3817NT4G

    OMO.#: OMO-NTD3817NT4G-ON-SEMICONDUCTOR

    		 MOSFET N-CH 16V 7.6A DPAK
    可用性
    庫存:
    Available
    訂購:
    5000
    輸入數量:
    NTD3817NT4G的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$0.00
    US$0.00
    10
    US$0.00
    US$0.00
    100
    US$0.00
    US$0.00
    500
    US$0.00
    US$0.00
    1000
    US$0.00
    US$0.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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