FCI7N60

FCI7N60
Mfr. #:
FCI7N60
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET HIGH POWER
生命週期:
製造商新產品
數據表:
FCI7N60 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商:
安森美半導體
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-262-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
600 V
Id - 連續漏極電流:
7 A
Rds On - 漏源電阻:
600 mOhms
Vgs - 柵源電壓:
30 V
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
83 W
配置:
單身的
頻道模式:
增強
商品名:
超場效應晶體管
打包:
管子
高度:
7.88 mm
長度:
10.29 mm
系列:
FCI7N60
晶體管類型:
1 N-Channel
寬度:
4.83 mm
品牌:
安森美半導體/飛兆半導體
秋季時間:
32 ns
產品類別:
MOSFET
上升時間:
55 ns
出廠包裝數量:
1000
子類別:
MOSFET
典型關斷延遲時間:
75 ns
典型的開啟延遲時間:
35 ns
單位重量:
0.073511 oz
Tags
FCI7, FCI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, I2PAK
***ure Electronics
Single N-Channel 600 V 0.6 Ohm 30 nC 83 W Silicon Through Hole Mosfet - TO-262
***ical
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Rail
***o-Tech
MOSFET N-Channel 600V 7A SuperFET I2PAK
***i-Key
MOSFET N-CH 600V 7A I2PAK
***eco
TEW CREATED FOR SUZHOU <AZ
***ser
IGBTs HIGH_POWER
***ark
MOSFET, N CH, 600V, 7A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; No. of Pins:3 ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N CH, 600V, 7A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
型號 製造商 描述 庫存 價格
FCI7N60
DISTI # 33134434
ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Tube1000
  • 1000:$0.9232
FCI7N60
DISTI # FCI7N60-ND
ON SemiconductorMOSFET N-CH 600V 7A I2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tube
Temporarily Out of Stock
  • 1000:$0.9232
FCI7N60
DISTI # V36:1790_06359887
ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Tube0
  • 1000000:$0.7350
  • 500000:$0.7354
  • 100000:$0.7915
  • 10000:$0.9037
  • 1000:$0.9232
FCI7N60
DISTI # FCI7N60
ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Rail - Rail/Tube (Alt: FCI7N60)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 10000:$0.7479
  • 5000:$0.7669
  • 3000:$0.7769
  • 2000:$0.7869
  • 1000:$0.7919
FCI7N60
DISTI # FCI7N60
ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Rail - Bulk (Alt: FCI7N60)
RoHS: Compliant
Min Qty: 348
Container: Bulk
Americas - 0
  • 3480:$0.8879
  • 1740:$0.9109
  • 1044:$0.9229
  • 696:$0.9349
  • 348:$0.9409
FCI7N60
DISTI # FCI7N60
ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Rail (Alt: FCI7N60)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.7979
  • 500:€0.8109
  • 100:€0.8229
  • 50:€0.8359
  • 25:€0.9209
  • 10:€1.0779
  • 1:€1.3179
FCI7N60
DISTI # 512-FCI7N60
ON SemiconductorMOSFET HIGH POWER
RoHS: Compliant
2994
  • 1:$1.7800
  • 10:$1.5100
  • 100:$1.2100
  • 500:$1.0600
  • 1000:$0.8790
  • 2000:$0.8660
FCI7N60Fairchild Semiconductor CorporationPower Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
398
  • 1000:$0.8800
  • 500:$0.9300
  • 100:$0.9700
  • 25:$1.0100
  • 1:$1.0900
FCI7N60Fairchild Semiconductor CorporationPower Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
200
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    可用性
    庫存:
    Available
    訂購:
    1985
    輸入數量:
    FCI7N60的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$1.78
    US$1.78
    10
    US$1.51
    US$15.10
    100
    US$1.21
    US$121.00
    500
    US$1.06
    US$530.00
    1000
    US$0.88
    US$879.00
    2000
    US$0.87
    US$1 732.00
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