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BSC010NE2LSIATMA1

BSC010NE2LSIATMA1
Mfr. #:
BSC010NE2LSIATMA1
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
生命週期:
製造商新產品
數據表:
BSC010NE2LSIATMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TDSON-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
25 V
Id - 連續漏極電流：
100 A
Rds On - 漏源電阻：
900 uOhms
Vgs th - 柵源閾值電壓：
1.2 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
78 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
96 W
配置：
單身的
頻道模式：
增強
商品名：
優化MOS
打包：
捲軸
高度：
1.27 mm
長度：
5.9 mm
晶體管類型：
1 N-Channel
寬度：
5.15 mm
品牌：
英飛凌科技
正向跨導 - 最小值：
80 S
秋季時間：
4.6 ns
產品類別：
MOSFET
上升時間：
6.2 ns
出廠包裝數量：
5000
子類別：
MOSFET
典型關斷延遲時間：
32 ns
典型的開啟延遲時間：
6.3 ns
第 # 部分別名：
BSC010NE2LSI BSC1NE2LSIXT SP000854376
單位重量：
0.004187 oz
Tags
BSC010NE, BSC010, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 25 V 1.05 mOhm 59 nC OptiMOS™ Power Mosfet - TDSON-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:100A; On Resistance Rds(On):900Μohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: Yes
***ineon
With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Reduce power losses and increase efficiency for all load conditions; Save space with smallest packages like CanPAK, S3O8 or system in package solution; Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in | Target Applications: Onboard charger; Mainboard; Notebook; DC-DC; VRD/VRM; LED; Motor control
型號 製造商 描述 庫存 價格
BSC010NE2LSIATMA1
DISTI # BSC010NE2LSIATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 25V 38A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		27951In Stock
  • 1000:$0.9241
  • 500:$1.1153
  • 100:$1.4340
  • 10:$1.7840
  • 1:$1.9800
BSC010NE2LSIATMA1
DISTI # BSC010NE2LSIATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 25V 38A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		27951In Stock
  • 1000:$0.9241
  • 500:$1.1153
  • 100:$1.4340
  • 10:$1.7840
  • 1:$1.9800
BSC010NE2LSIATMA1
DISTI # BSC010NE2LSIATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 25V 38A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		25000In Stock
  • 5000:$0.8044
BSC010NE2LSIATMA1
DISTI # BSC010NE2LSIATMA1		Infineon Technologies AGTrans MOSFET P-CH 25V 38A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC010NE2LSIATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.7099
  • 10000:$0.6879
  • 20000:$0.6859
  • 30000:$0.6839
  • 50000:$0.6819
BSC010NE2LSIATMA1
DISTI # SP000854376		Infineon Technologies AGTrans MOSFET P-CH 25V 38A 8-Pin TDSON T/R (Alt: SP000854376)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€0.8609
  • 10000:€0.7039
  • 20000:€0.6459
  • 30000:€0.5959
  • 50000:€0.5529
BSC010NE2LSIATMA1
DISTI # 47Y7991		Infineon Technologies AGMOSFET, N-CH, 25V, 100A, 150DEG C, 96W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):900µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes5000
  • 1000:$0.8160
  • 500:$0.9850
  • 250:$1.0500
  • 100:$1.1200
  • 50:$1.2100
  • 25:$1.3100
  • 10:$1.4000
  • 1:$1.6500
BSC010NE2LSIATMA1.
DISTI # 25AC6430		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):900µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:96W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 50000:$0.5950
  • 30000:$0.5970
  • 20000:$0.5980
  • 10000:$0.6000
  • 1:$0.6010
BSC010NE2LSIATMA1
DISTI # 726-BSC010NE2LSIATMA		Infineon Technologies AGMOSFET N-Ch 25V 100A TDSON-8 OptiMOS
RoHS: Compliant		11110
  • 1:$1.6500
  • 10:$1.4000
  • 100:$1.1200
  • 500:$0.9850
  • 1000:$0.8160
  • 2500:$0.7600
  • 5000:$0.7320
  • 10000:$0.7040
BSC010NE2LSI
DISTI # 726-BSC010NE2LSI		Infineon Technologies AGMOSFET N-Ch 25V 100A TDSON-8 OptiMOS
RoHS: Compliant		3760
  • 1:$1.6500
  • 10:$1.4000
  • 100:$1.1200
  • 500:$0.9850
  • 1000:$0.8160
BSC010NE2LSIATMA1
DISTI # 9064277P		Infineon Technologies AGMOSFET N-CHANNEL 25V TDSON8, RL20
  • 1250:£0.5840
  • 500:£0.7050
  • 250:£0.8090
  • 50:£0.9090
BSC010NE2LSIATMA1
DISTI # 2443417		Infineon Technologies AGMOSFET, N CH, 25V, 100A, TDSON-8
RoHS: Compliant		5496
  • 500:£0.7260
  • 250:£0.8330
  • 100:£0.8720
  • 25:£0.9360
  • 5:£1.1100
BSC010NE2LSIATMA1
DISTI # 2443417		Infineon Technologies AGMOSFET, N CH, 25V, 100A, TDSON-8
RoHS: Compliant		5356
  • 5000:$1.2100
  • 1000:$1.2300
  • 500:$1.4800
  • 100:$1.6900
  • 10:$2.1100
  • 1:$2.4900
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可用性
庫存:
Available
訂購:
1989
輸入數量:
BSC010NE2LSIATMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.57
US$1.57
10
US$1.33
US$13.30
100
US$1.06
US$106.00
500
US$0.94
US$467.50
1000
US$0.77
US$774.00
2500
US$0.72
US$1 802.50
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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