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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| SIE812DF-T1-GE3 DISTI # SIE812DF-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 40V 60A POLARPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 2990In Stock |
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| SIE812DF-T1-GE3 DISTI # SIE812DF-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 40V 60A POLARPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 2990In Stock |
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| SIE812DF-T1-GE3 DISTI # SIE812DF-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 40V 60A POLARPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
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| SIE812DF-T1-E3 DISTI # SIE812DF-T1-E3TR-ND | Vishay Siliconix | MOSFET N-CH 40V 60A 10-POLARPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
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| SIE812DF-T1-E3 DISTI # SIE812DF-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 33A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE812DF-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
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| SIE812DF-T1-GE3 DISTI # SIE812DF-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 33A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE812DF-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
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| SIE812DF-T1-GE3 DISTI # 15R4857 | Vishay Intertechnologies | N CHANNEL MOSFET, 40V, 60A POLARPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V RoHS Compliant: Yes | 0 |
|
| SIE812DF-T1-GE3 DISTI # 26R1858 | Vishay Intertechnologies | N CHANNEL MOSFET, 40V, 60A POLARPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V RoHS Compliant: Yes | 0 |
|
| SIE812DF-T1-E3 DISTI # 781-SIE812DF-T1-E3 | Vishay Intertechnologies | MOSFET 40V 60A 125W 2.6mohm @ 10V RoHS: Compliant | 0 |
|
| SIE812DF-T1-GE3 DISTI # 781-SIE812DF-GE3 | Vishay Intertechnologies | MOSFET 40V 163A 125W 2.6mohm @ 10V RoHS: Compliant | 0 |
|
| SIE812DF-T1-E3 DISTI # 1497643 | Vishay Intertechnologies | RoHS: Compliant | 0 |
|
| SIE812DF-T1-E3 | Vishay Intertechnologies | MOSFET 40V 60A 125W 2.6mohm @ 10V | Americas - |
| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: SIE818DF-T1-E3 OMO.#: OMO-SIE818DF-T1-E3 |
MOSFET 75V Vds 20V Vgs PolarPAK |
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Mfr.#: SIE876DF-T1-GE3 OMO.#: OMO-SIE876DF-T1-GE3 |
MOSFET RECOMMENDED ALT 781-SIE818DF-GE3 |
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Mfr.#: SIE832DF-T1-GE3 OMO.#: OMO-SIE832DF-T1-GE3 |
MOSFET RECOMMENDED ALT 781-SIE818DF-GE3 |
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Mfr.#: SIE878DF-T1-GE3 OMO.#: OMO-SIE878DF-T1-GE3 |
MOSFET 25V Vds 20V Vgs PolarPAK |
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Mfr.#: SIE806DF-T1-GE3 OMO.#: OMO-SIE806DF-T1-GE3-VISHAY |
MOSFET 30V 202A 125W 1.7mohm @ 10V |
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Mfr.#: SIE808DF-T1-E3 OMO.#: OMO-SIE808DF-T1-E3-VISHAY |
RF Bipolar Transistors MOSFET 20V 60A 125W 1.6mohm @ 10V |
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Mfr.#: SIE816DF-T1-E3 OMO.#: OMO-SIE816DF-T1-E3-VISHAY |
RF Bipolar Transistors MOSFET 60V 95A 125W 7.4mohm @ 10V |
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Mfr.#: SIE800DFT1E3 OMO.#: OMO-SIE800DFT1E3-1190 |
全新原裝 |
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Mfr.#: SIE832DFT1GE3 OMO.#: OMO-SIE832DFT1GE3-1190 |
Power Field-Effect Transistor, 23.6A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: SIE868DFT1GE3 OMO.#: OMO-SIE868DFT1GE3-1190 |
Power Field-Effect Transistor, 35A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |