SI4166DY-T1-GE3

SI4166DY-T1-GE3
Mfr. #:
SI4166DY-T1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 30V Vds 20V Vgs SO-8
生命週期:
製造商新產品
數據表:
SI4166DY-T1-GE3 數據表
交貨:
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支付:
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HTML Datasheet:
SI4166DY-T1-GE3 DatasheetSI4166DY-T1-GE3 Datasheet (P4-P6)SI4166DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
更多信息:
SI4166DY-T1-GE3 更多信息
產品屬性
屬性值
製造商:
威世
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
SO-8
商品名:
溝槽場效應晶體管
打包:
捲軸
高度:
1.75 mm
長度:
4.9 mm
系列:
SI4
寬度:
3.9 mm
品牌:
威世 / Siliconix
產品類別:
MOSFET
出廠包裝數量:
2500
子類別:
MOSFET
第 # 部分別名:
SI4166DY-GE3
單位重量:
0.006596 oz
Tags
SI4166DY-T, SI4166D, SI4166, SI416, SI41, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    T***r
    T***r
    DE

    Top! Works!

    2019-01-15
    E**u
    E**u
    PT

    works very well. recommend

    2019-04-11
    A***a
    A***a
    RU

    Works fine

    2019-04-14
***ure Electronics
Single N-Channel 30 V 3.9 mOhm 6.5 W Surface Mount Power Mosfet - SOIC-8
*** Source Electronics
MOSFET N-CH 30V 30.5A 8-SOIC / Trans MOSFET N-CH 30V 30.5A 8-Pin SOIC N T/R
***nell
MOSFET, N CH, 30V, 30.5A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:30.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
型號 製造商 描述 庫存 價格
SI4166DY-T1-GE3
DISTI # SI4166DY-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 30.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1130In Stock
  • 1000:$0.7138
  • 500:$0.9041
  • 100:$1.1659
  • 10:$1.4750
  • 1:$1.6700
SI4166DY-T1-GE3
DISTI # SI4166DY-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 30.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1130In Stock
  • 1000:$0.7138
  • 500:$0.9041
  • 100:$1.1659
  • 10:$1.4750
  • 1:$1.6700
SI4166DY-T1-GE3
DISTI # SI4166DY-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 30.5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.6468
SI4166DY-T1-GE3
DISTI # SI4166DY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R (Alt: SI4166DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
    SI4166DY-T1-GE3
    DISTI # SI4166DY-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4166DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 2500:$0.6329
    • 5000:$0.6319
    • 10000:$0.6299
    • 15000:$0.6279
    • 25000:$0.6269
    SI4166DY-T1-GE3
    DISTI # SI4166DY-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R (Alt: SI4166DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel
    Europe - 0
    • 2500:€0.6869
    • 5000:€0.4689
    • 10000:€0.4029
    • 15000:€0.3719
    • 25000:€0.3469
    SI4166DY-T1-GE3
    DISTI # 85W3205
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 85W3205)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack
    Americas - 0
    • 1:$0.7990
    SI4166DY-T1-GE3
    DISTI # 97W2647
    Vishay IntertechnologiesMOSFET, N CH, 30V, 30.5A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:30.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0032ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V,Power , RoHS Compliant: Yes2250
    • 1:$1.4700
    • 10:$1.2100
    • 25:$1.1200
    • 50:$1.0200
    • 100:$0.9290
    • 500:$0.7990
    • 1000:$0.7010
    SI4166DY-T1-GE3
    DISTI # 781-SI4166DY-T1-GE3
    Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
    RoHS: Compliant
    4268
    • 1:$1.4700
    • 10:$1.2100
    • 100:$0.9290
    • 500:$0.7990
    • 1000:$0.7560
    • 2500:$0.7000
    SI4166DY-T1-GE3
    DISTI # 2335305
    Vishay IntertechnologiesMOSFET, N CH, 30V, 30.5A, SOIC
    RoHS: Compliant
    2250
    • 1:$2.3400
    • 10:$1.9200
    • 100:$1.4700
    • 500:$1.2600
    • 1000:$1.1200
    • 2500:$1.1100
    SI4166DY-T1-GE3
    DISTI # 2335305
    Vishay IntertechnologiesMOSFET, N CH, 30V, 30.5A, SOIC
    RoHS: Compliant
    4741
    • 5:£1.1300
    • 25:£0.9270
    • 100:£0.7100
    • 250:£0.6610
    • 500:£0.6100
    SI4166DY-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
    RoHS: Compliant
    Americas - 5000
    • 2500:$0.4080
    • 5000:$0.3860
    • 10000:$0.3730
    圖片 型號 描述
    CC1310F128RGZR

    Mfr.#: CC1310F128RGZR

    OMO.#: OMO-CC1310F128RGZR

    RF Microcontrollers - MCU 433 868 915 MHz ULP Wireless MCU
    BAT54HMFHT116

    Mfr.#: BAT54HMFHT116

    OMO.#: OMO-BAT54HMFHT116

    Schottky Diodes & Rectifiers 30V Vr 0.2A Io SBD SOT-23 0.1A
    TPS563208DDCR

    Mfr.#: TPS563208DDCR

    OMO.#: OMO-TPS563208DDCR

    Switching Voltage Regulators Augusta Next
    CRCW12060000Z0EAC

    Mfr.#: CRCW12060000Z0EAC

    OMO.#: OMO-CRCW12060000Z0EAC

    Thick Film Resistors - SMD 1/4Watt 0ohms Commercial Use
    C0603C103J3GECAUTO

    Mfr.#: C0603C103J3GECAUTO

    OMO.#: OMO-C0603C103J3GECAUTO

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 25V 0.01uF 0603 C0G 5% AEC-Q200
    TPS563208DDCR

    Mfr.#: TPS563208DDCR

    OMO.#: OMO-TPS563208DDCR-TEXAS-INSTRUMENTS

    IC REG BUCK ADJ 3A TSOT23-6
    CRCW12060000Z0EAC

    Mfr.#: CRCW12060000Z0EAC

    OMO.#: OMO-CRCW12060000Z0EAC-VISHAY-DALE

    D25/CRCW1206-C 0R0 ET1 E3
    CC1310F128RGZR

    Mfr.#: CC1310F128RGZR

    OMO.#: OMO-CC1310F128RGZR-TEXAS-INSTRUMENTS

    全新原裝
    GCM21BC71E475KE36L

    Mfr.#: GCM21BC71E475KE36L

    OMO.#: OMO-GCM21BC71E475KE36L-MURATA-ELECTRONICS

    Cap Ceramic 4.7uF 25V X7S 10% Pad SMD 0805 125C Automotive T/R
    BAT54HMFHT116

    Mfr.#: BAT54HMFHT116

    OMO.#: OMO-BAT54HMFHT116-ROHM-SEMI

    AUTOMOTIVE SCHOTTKY BARRIER DIOD
    可用性
    庫存:
    Available
    訂購:
    1986
    輸入數量:
    SI4166DY-T1-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$1.47
    US$1.47
    10
    US$1.21
    US$12.10
    100
    US$0.93
    US$92.90
    500
    US$0.80
    US$399.50
    1000
    US$0.76
    US$756.00
    由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
    從...開始
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