IXFN90N85X

IXFN90N85X
Mfr. #:
IXFN90N85X
製造商:
Littelfuse
描述:
850V/90A ULT JUNC X-C HIPERFET P
生命週期:
製造商新產品
數據表:
IXFN90N85X 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
IXFN90N85X 更多信息
產品屬性
屬性值
Tags
IXFN90, IXFN9, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 850V 90A 4-Pin SOT-227B
***i-Key
850V/90A ULT JUNC X-C HIPERFET P
X-Class 850V - 1000V Power MOSFETs with HiPerFET™
IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
型號 製造商 描述 庫存 價格
IXFN90N85X
DISTI # IXFN90N85X-ND
IXYS Corporation850V/90A ULT JUNC X-C HIPERFET P
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 100:$31.8450
  • 30:$33.9680
  • 10:$36.7280
  • 1:$39.2800
IXFN90N85X
DISTI # 747-IXFN90N85X
IXYS CorporationMOSFET 850V/90A Ultra Junction X-Class
RoHS: Compliant
0
  • 1:$39.2700
  • 5:$37.9000
  • 10:$36.7200
  • 25:$33.9700
  • 50:$32.9600
  • 100:$31.8400
  • 200:$29.7200
IXFN90N85X
DISTI # 1464248
IXYS CorporationULTRA JUNCTION MOSFET 90A 850V SOT227, TU15
  • 10:£25.3680
圖片 型號 描述
IXFN94N50P2

Mfr.#: IXFN94N50P2

OMO.#: OMO-IXFN94N50P2

Discrete Semiconductor Modules DiscMSFT NChHiPerFETPolar2 SOT-227B(mini
IXFN90N85X

Mfr.#: IXFN90N85X

OMO.#: OMO-IXFN90N85X

MOSFET 850V/90A Ultra Junction X-Class
IXFN90N30

Mfr.#: IXFN90N30

OMO.#: OMO-IXFN90N30

MOSFET 90 Amps 300V 0.033 Rds
IXFN90N170SK

Mfr.#: IXFN90N170SK

OMO.#: OMO-IXFN90N170SK

MOSFET SICARBIDE-DISCRETE MOSFET (MIN
IXFN90N30

Mfr.#: IXFN90N30

OMO.#: OMO-IXFN90N30-IXYS-CORPORATION

MOSFET N-CH 300V 90A SOT-227B
IXFN90N85X

Mfr.#: IXFN90N85X

OMO.#: OMO-IXFN90N85X-IXYS-CORPORATION

850V/90A ULT JUNC X-C HIPERFET P
IXFN94N50P2

Mfr.#: IXFN94N50P2

OMO.#: OMO-IXFN94N50P2-IXYS-CORPORATION

500V POLAR2 HIPERFETS
可用性
庫存:
Available
訂購:
3500
輸入數量:
IXFN90N85X的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$44.58
US$44.58
10
US$42.35
US$423.51
100
US$40.12
US$4 012.20
500
US$37.89
US$18 946.50
1000
US$35.66
US$35 664.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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