FDMC8882

Mfr. #:: FDMC8882
製造商:: ON Semiconductor
描述:: MOSFET N-CH 30V 8-MLP
生命週期:: 製造商新產品
數據表:: FDMC8882 數據表
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ECAD Model:
更多信息:: FDMC8882 更多信息

產品屬性
屬性值

製造商: 仙童

產品分類: FET - 單

打包: 捲軸

單位重量: 0.007055 oz

安裝方式: 貼片/貼片

包裝盒: MLP-8

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 18 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 16 A

Vds-漏-源-擊穿電壓: 30 V

Rds-On-Drain-Source-Resistance: 14.3 mOhms

晶體管極性: N通道

Qg-門電荷: 7 nC 14 nC

Tags: FDMC888, FDMC88, FDMC8, FDMC, FDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMC8882 描述

***emi: N-Channel Power Trench® MOSFET 30V, 16A, 14.3mΩ

***nell: MOSFET, N CH, 30V, 16A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0124ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:18W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

FDMC8882 更多信息

FDMC8xxxx N-Ch Shielded Gate PowerTrench® MOSFETs: ON Semiconductor FDMC8xxxx N-Channel Shielded Gate PowerTrench® MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. FDMC8xxxx MOSFETs are designed for use in DC-DC conversion applications.Learn More

Market price

型號	製造商	描述	庫存	價格
FDMC8882 DISTI # FDMC8882FSCT-ND	ON Semiconductor	MOSFET N-CH 30V 8-MLP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9900In Stock	1000:$0.2683 500:$0.3354 100:$0.4527 10:$0.5870 1:$0.6700
FDMC8882 DISTI # FDMC8882FSDKR-ND	ON Semiconductor	MOSFET N-CH 30V 8-MLP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9900In Stock	1000:$0.2683 500:$0.3354 100:$0.4527 10:$0.5870 1:$0.6700
FDMC8882 DISTI # FDMC8882FSTR-ND	ON Semiconductor	MOSFET N-CH 30V 8-MLP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	3000:$0.2523
FDMC8882 DISTI # FDMC8882	ON Semiconductor	Trans MOSFET N-CH 30V 10.5A 8-Pin MLP EP T/R - Tape and Reel (Alt: FDMC8882) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 3000	3000:$0.1929 6000:$0.1919 12000:$0.1889 18000:$0.1869 30000:$0.1819
FDMC8882 DISTI # FDMC8882	ON Semiconductor	Trans MOSFET N-CH 30V 10.5A 8-Pin MLP EP T/R - Bulk (Alt: FDMC8882) RoHS: Not Compliant Min Qty: 1563 Container: Bulk	Americas - 0	1563:$0.1559 1565:$0.1549 3128:$0.1529 7815:$0.1509 15630:$0.1479
FDMC8882 DISTI # FDMC8882	ON Semiconductor	Trans MOSFET N-CH 30V 10.5A 8-Pin MLP EP T/R (Alt: FDMC8882) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	3000:$0.2960 6000:$0.2846 9000:$0.2741 15000:$0.2643 30000:$0.2552 75000:$0.2467 150000:$0.2426
FDMC8882 DISTI # FDMC8882	ON Semiconductor	Trans MOSFET N-CH 30V 10.5A 8-Pin MLP EP T/R (Alt: FDMC8882) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0
FDMC8882 DISTI # 64R3021	ON Semiconductor	FET 30V 14.3 MOHM MLP33 / REEL	0	45000:$0.1990 24000:$0.2040 9000:$0.2140 1:$0.2220
FDMC8882 DISTI # 88T3285	ON Semiconductor	MOSFET, N CHANNEL, 30V, 16A, MLP 3.3X3.3,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0124ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.9V RoHS Compliant: Yes	0	1000:$0.2520 500:$0.2770 250:$0.3010 100:$0.3260 50:$0.3960 25:$0.4650 10:$0.5350 1:$0.6400
FDMC8882 DISTI # 512-FDMC8882	ON Semiconductor	MOSFET 30V N-Channel Power Trench 174 MOSFET RoHS: Compliant	0	1:$0.6400 10:$0.5350 100:$0.3260 1000:$0.2520 3000:$0.2150 9000:$0.2000 24000:$0.1900
FDMC8882	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 10.5A I(D), 30V, 0.0143ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	2602	1000:$0.2100 500:$0.2200 100:$0.2300 25:$0.2400 1:$0.2600
FDMC8882 DISTI # 2083273	ON Semiconductor	MOSFET, N CH, 30V, 16A, MLP 3.3X3.3 RoHS: Compliant	0	45000:$0.2790 24000:$0.2860 9000:$0.3010 3000:$0.3240 1000:$0.3800 100:$0.4910 10:$0.8060 1:$0.9640
FDMC8882 DISTI # 2083273	ON Semiconductor	MOSFET, N CH, 30V, 16A, MLP 3.3X3.3 RoHS: Compliant	0	500:£0.1940 250:£0.2230 100:£0.2510 25:£0.4320 5:£0.4660

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