IRF630NLPBF

IRF630NLPBF
Mfr. #:
IRF630NLPBF
製造商:
Infineon / IR
描述:
MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
生命週期:
製造商新產品
數據表:
IRF630NLPBF 數據表
交貨:
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支付:
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HTML Datasheet:
IRF630NLPBF DatasheetIRF630NLPBF Datasheet (P4-P6)IRF630NLPBF Datasheet (P7-P9)IRF630NLPBF Datasheet (P10-P11)
ECAD Model:
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-262-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
200 V
Id - 連續漏極電流:
9.3 A
Rds On - 漏源電阻:
300 mOhms
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
23.3 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 175 C
Pd - 功耗:
82 W
配置:
單身的
頻道模式:
增強
打包:
管子
高度:
9.45 mm
長度:
10.2 mm
晶體管類型:
1 N-Channel
寬度:
4.5 mm
品牌:
英飛凌/紅外
正向跨導 - 最小值:
4.9 S
秋季時間:
15 ns
產品類別:
MOSFET
上升時間:
14 ns
出廠包裝數量:
50
子類別:
MOSFET
典型關斷延遲時間:
27 ns
典型的開啟延遲時間:
7.9 ns
第 # 部分別名:
SP001559690
單位重量:
0.084199 oz
Tags
IRF630N, IRF630, IRF63, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package
***et
Trans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-262
***ied Electronics & Automation
MOSFET, 200V, 9.5A, 300 MOHM, 23.3 NC QG, TO-262
***i-Key
MOSFET N-CH 200V 9.3A TO-262
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9.5A; On Resistance, Rds(on):300mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
型號 製造商 描述 庫存 價格
IRF630NLPBF
DISTI # IRF630NLPBF-ND
Infineon Technologies AGMOSFET N-CH 200V 9.3A TO-262
RoHS: Compliant
Min Qty: 600
Container: Tube
Limited Supply - Call
    IRF630NLPBF
    DISTI # 70018226
    Infineon Technologies AGMOSFET,200V,9.5A,300 MOHM,23.3 NC QG,TO-262
    RoHS: Compliant
    0
    • 600:$1.8300
    • 1200:$1.7930
    • 3000:$1.7390
    • 6000:$1.6650
    • 15000:$1.5560
    IRF630NLPBF
    DISTI # 942-IRF630NLPBF
    Infineon Technologies AGMOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
    RoHS: Compliant
    0
      圖片 型號 描述
      IRF634L

      Mfr.#: IRF634L

      OMO.#: OMO-IRF634L-VISHAY

      MOSFET N-CH 250V 8.1A TO-262
      IRF634NL

      Mfr.#: IRF634NL

      OMO.#: OMO-IRF634NL-1190

      全新原裝
      IRF630B/A

      Mfr.#: IRF630B/A

      OMO.#: OMO-IRF630B-A-1190

      全新原裝
      IRF630BTSTU_FP001

      Mfr.#: IRF630BTSTU_FP001

      OMO.#: OMO-IRF630BTSTU-FP001-ON-SEMICONDUCTOR

      MOSFET N-CH 200V 9A TO-220
      IRF630N

      Mfr.#: IRF630N

      OMO.#: OMO-IRF630N-1190

      MOSFET N-CHANNEL 200V 9.3A TO220AB, EA
      IRF633

      Mfr.#: IRF633

      OMO.#: OMO-IRF633-1190

      Power Field-Effect Transistor, 8A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      IRF634B,IRF634FP,IRF640,

      Mfr.#: IRF634B,IRF634FP,IRF640,

      OMO.#: OMO-IRF634B-IRF634FP-IRF640--1190

      全新原裝
      IRF634N

      Mfr.#: IRF634N

      OMO.#: OMO-IRF634N-1190

      MOSFET N-Chan 250V 8.0 Amp
      IRF630NLPBF

      Mfr.#: IRF630NLPBF

      OMO.#: OMO-IRF630NLPBF-INFINEON-TECHNOLOGIES

      IGBT Transistors MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
      IRF634

      Mfr.#: IRF634

      OMO.#: OMO-IRF634-STMICROELECTRONICS

      MOSFET N-Chan 250V 8.0 Amp
      可用性
      庫存:
      Available
      訂購:
      4000
      輸入數量:
      IRF630NLPBF的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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