IRLR7821TRLPBF

IRLR7821TRLPBF
Mfr. #:
IRLR7821TRLPBF
製造商:
Infineon Technologies
描述:
MOSFET MOSFT 30V 65A 10mOhm 10nC Log Lvl
生命週期:
製造商新產品
數據表:
IRLR7821TRLPBF 數據表
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HTML Datasheet:
IRLR7821TRLPBF DatasheetIRLR7821TRLPBF Datasheet (P4-P6)IRLR7821TRLPBF Datasheet (P7-P9)IRLR7821TRLPBF Datasheet (P10-P12)
ECAD Model:
更多信息:
IRLR7821TRLPBF 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
TO-252-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
30 V
Id - 連續漏極電流:
65 A
Rds On - 漏源電阻:
10 mOhms
Vgs th - 柵源閾值電壓:
1 V
Qg - 門電荷:
14 nC
最高工作溫度:
+ 175 C
Pd - 功耗:
75 W
配置:
單身的
打包:
捲軸
高度:
2.3 mm
長度:
6.5 mm
晶體管類型:
1 N-Channel
寬度:
6.22 mm
品牌:
英飛凌科技
正向跨導 - 最小值:
46 S
秋季時間:
3.2 ns
產品類別:
MOSFET
上升時間:
4.2 ns
出廠包裝數量:
3000
子類別:
MOSFET
第 # 部分別名:
SP001567356
單位重量:
0.139332 oz
Tags
IRLR7821T, IRLR782, IRLR7, IRLR, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
型號 製造商 描述 庫存 價格
IRLR7821TRLPBF
DISTI # V72:2272_13891113
Infineon Technologies AGTrans MOSFET N-CH 30V 65A 3-Pin(2+Tab) DPAK T/R3000
  • 3000:$0.2543
  • 1000:$0.2904
  • 500:$0.3250
  • 250:$0.3767
  • 100:$0.3808
  • 25:$0.3831
  • 10:$0.4257
  • 1:$0.4729
IRLR7821TRLPBF
DISTI # IRLR7821TRLPBF-ND
Infineon Technologies AGMOSFET N-CH 30V 65A DPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.3625
IRLR7821TRLPBF
DISTI # 27179233
Infineon Technologies AGTrans MOSFET N-CH 30V 65A 3-Pin(2+Tab) DPAK T/R3000
  • 3000:$0.2543
  • 1000:$0.2904
  • 500:$0.3250
  • 250:$0.3767
  • 100:$0.3808
  • 28:$0.3831
IRLR7821TRLPBF
DISTI # IRLR7821TRLPBF
Infineon Technologies AGTrans MOSFET N-CH 30V 65A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRLR7821TRLPBF)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.2609
  • 6000:$0.2519
  • 12000:$0.2429
  • 18000:$0.2349
  • 30000:$0.2309
IRLR7821TRLPBF.
DISTI # 27AC6956
Infineon Technologies AGMOSFET Transistor,Transistor Polarity:N Channel,Continuous Drain Current Id:65A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0075ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:20V,Power Dissipation Pd:75W RoHS Compliant: Yes0
  • 1:$0.2610
  • 6000:$0.2520
  • 12000:$0.2430
  • 18000:$0.2350
  • 30000:$0.2310
IRLR7821TRLPBF
DISTI # 70017843
Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 7.5 Milliohms,ID 65A,D-Pak (TO-252AA),PD 75W
RoHS: Compliant
0
  • 3000:$1.2100
  • 6000:$1.1860
  • 15000:$1.1500
  • 30000:$1.1010
  • 75000:$1.0290
IRLR7821TRLPBF
DISTI # 942-IRLR7821TRLPBF
Infineon Technologies AGMOSFET MOSFT 30V 65A 10mOhm 10nC Log Lvl
RoHS: Compliant
1911
  • 1:$0.8500
  • 10:$0.7050
  • 100:$0.4550
  • 1000:$0.3640
IRLR7821TRLPBF
DISTI # 1824974
Infineon Technologies AGMOSFET Transistor
RoHS: Compliant
0
  • 1:$1.3500
  • 10:$1.1200
  • 100:$0.7210
  • 1000:$0.5770
  • 3000:$0.5770
圖片 型號 描述
LM4040DIM3-5.0/NOPB

Mfr.#: LM4040DIM3-5.0/NOPB

OMO.#: OMO-LM4040DIM3-5-0-NOPB

Voltage References PREC MICROPWR SHUNT VLTG REF
FDS4435BZ

Mfr.#: FDS4435BZ

OMO.#: OMO-FDS4435BZ

MOSFET 30V.PCH POWER TRENCH MOSFET
STB80NF10T4

Mfr.#: STB80NF10T4

OMO.#: OMO-STB80NF10T4

MOSFET N-Ch 100 Volt 80 Amp
BAT81S-TR

Mfr.#: BAT81S-TR

OMO.#: OMO-BAT81S-TR

Schottky Diodes & Rectifiers 150mA 40 Volt 500mA IFSM
STB80NF10T4

Mfr.#: STB80NF10T4

OMO.#: OMO-STB80NF10T4-STMICROELECTRONICS

MOSFET N-CH 100V 80A D2PAK
LM4040DIM3-5.0/NOPB

Mfr.#: LM4040DIM3-5.0/NOPB

OMO.#: OMO-LM4040DIM3-5-0-NOPB-TEXAS-INSTRUMENTS

Voltage References PREC MICROPWR SHUNT VLTG REF
H1102NL

Mfr.#: H1102NL

OMO.#: OMO-H1102NL-PULSE-ELECTRONICS

MODULE XFRMR SGL ETHR LAN 16SOIC
ADXL335BCPZ-RL7

Mfr.#: ADXL335BCPZ-RL7

OMO.#: OMO-ADXL335BCPZ-RL7-ANALOG-DEVICES

Motion & Position Sensors Accelerometers Small 3-Axis +/-3 g Low Powe
BAT81S-TR

Mfr.#: BAT81S-TR

OMO.#: OMO-BAT81S-TR-VISHAY

Schottky Diodes & Rectifiers 150mA 40 Volt 500mA IFSM
FDS4435BZ

Mfr.#: FDS4435BZ

OMO.#: OMO-FDS4435BZ-ON-SEMICONDUCTOR

MOSFET P-CH 30V 8.8A 8-SOIC
可用性
庫存:
Available
訂購:
1984
輸入數量:
IRLR7821TRLPBF的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$0.85
US$0.85
10
US$0.70
US$7.05
100
US$0.46
US$45.50
1000
US$0.36
US$364.00
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