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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| FQI4N90TU DISTI # V36:1790_06359437 | ON Semiconductor | 900V N-CHANNEL QFET | 0 |
|
| FQI4N90TU DISTI # FQI4N90TU-ND | ON Semiconductor | MOSFET N-CH 900V 4.2A I2PAK RoHS: Compliant Min Qty: 1000 Container: Tube | Temporarily Out of Stock |
|
| FQI4N90TU DISTI # FQI4N90TU | ON Semiconductor | Trans MOSFET N-CH 900V 4.2A 3-Pin(3+Tab) I2PAK Rail - Bulk (Alt: FQI4N90TU) Min Qty: 334 Container: Bulk | Americas - 0 |
|
| FQI4N90TU DISTI # FQI4N90TU | ON Semiconductor | Trans MOSFET N-CH 900V 4.2A 3-Pin(3+Tab) I2PAK Rail (Alt: FQI4N90TU) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| FQI4N90TU DISTI # FQI4N90TU | ON Semiconductor | Trans MOSFET N-CH 900V 4.2A 3-Pin(3+Tab) I2PAK Rail - Rail/Tube (Alt: FQI4N90TU) RoHS: Compliant Min Qty: 1000 Container: Tube | Americas - 0 |
|
| FQI4N90TU DISTI # 82C4156 | ON Semiconductor | TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,4.2A I(D),TO-262AA ROHS COMPLIANT: YES | 0 |
|
| FQI4N90TU DISTI # 512-FQI4N90TU | ON Semiconductor | MOSFET 900V N-Channel QFET RoHS: Compliant | 287 |
|
| FQI4N90TU | ON Semiconductor | Power Field-Effect Transistor, 4.2A I(D), 900V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 9000 |
|
| FQI4N90TU | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 4.2A I(D), 900V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 1841 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: FQI2P25TU OMO.#: OMO-FQI2P25TU |
MOSFET |
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Mfr.#: FQI13N10L OMO.#: OMO-FQI13N10L-1190 |
全新原裝 |
|
Mfr.#: FQI15P12TU |
MOSFET P-CH 120V 15A I2PAK |
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Mfr.#: FQI3N90 OMO.#: OMO-FQI3N90-1190 |
全新原裝 |
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Mfr.#: FQI4N20TM OMO.#: OMO-FQI4N20TM-1190 |
全新原裝 |
|
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Mfr.#: FQI5N50CTU |
MOSFET N-CH 500V 5A I2PAK |
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Mfr.#: FQI5P10TU |
MOSFET P-CH 100V 4.5A I2PAK |
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Mfr.#: FQI9N30TU OMO.#: OMO-FQI9N30TU-1190 |
全新原裝 |
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Mfr.#: FQI9N50 OMO.#: OMO-FQI9N50-1190 |
全新原裝 |
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Mfr.#: FQI9N50C OMO.#: OMO-FQI9N50C-1190 |
全新原裝 |