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FQT4N25TF

FQT4N25TF
Mfr. #:
FQT4N25TF
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 250V Single
生命週期:
製造商新產品
數據表:
FQT4N25TF 數據表
交貨:
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支付:
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ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
E
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
SOT-223-4
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
250 V
Id - 連續漏極電流：
830 mA
Rds On - 漏源電阻：
1.75 Ohms
Vgs - 柵源電壓：
30 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
2.5 W
配置：
單身的
頻道模式：
增強
打包：
捲軸
高度：
1.8 mm
長度：
6.5 mm
系列：
FQT4N25
晶體管類型：
1 N-Channel
類型：
MOSFET
寬度：
3.5 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
1.28 S
秋季時間：
22 ns
產品類別：
MOSFET
上升時間：
45 ns
出廠包裝數量：
4000
子類別：
MOSFET
典型關斷延遲時間：
6.4 ns
典型的開啟延遲時間：
6.8 ns
單位重量：
0.003951 oz
Tags
FQT4N25, FQT4, FQT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power MOSFET, N-Channel, QFET®, 250 V, 0.83 A, 1.75 Ω, SOT-223
*** Source Electronics
Trans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 250V 0.83A SOT-223
***ure Electronics
N-Channel 250 V 1.75 Ohm Surface Mount Mosfet - SOT-223
***nell
MOSFET, N-CH, 250V, 0.83A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 830mA; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 1.38ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***(Formerly Allied Electronics)
IRFL210TRPBF N-channel MOSFET Transistor; 0.96 A; 200 V; 3 + Tab-Pin SOT-223
***ure Electronics
Single N-Channel 200 V 1.5 Ohms Surface Mount Power Mosfet - SOT-223
***ical
Trans MOSFET N-CH 200V 0.96A 4-Pin(3+Tab) SOT-223 T/R
*** Stop Electro
Power Field-Effect Transistor, 0.96A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Power dissipation: 2 W
***ical
Trans MOSFET N-CH 200V 0.96A 4-Pin(3+Tab) SOT-223
***ment14 APAC
MOSFET, N, 200V, 0.96A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:960mA; Source Voltage Vds:200V; On Resistance
***SIT Distribution GmbH
Small Signal Field-Effect Transistor, 0.96A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***nell
MOSFET, N, 200V, 0.96A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 960mA; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 3.1W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 960mA; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 60°C/W; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 7.7A; SMD Marking: FL210; Termination Type: Surface Mount Device; Voltage Vds: 200V; Voltage Vds Typ: 200V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
***(Formerly Allied Electronics)
Transistor, P-channel, QFET MOSFET, -250V, -0.55A, 4.0 Ohm, SOT-223 | ON Semiconductor FQT2P25TF
***et
Trans MOSFET P-CH 250V 0.55A 4-Pin(3+Tab) SOT-223 T/R
***emi
P-Channel QFET® MOSFET -250 V, -0.55 A, 4.0 Ω
***ure Electronics
250V 0.55A 4OHM P-Channel SOT-223 Mosfet
***ark
Mosfet, P-Ch, -250V, -0.55A, Sot-223; Transistor Polarity:p Channel; Continuous Drain Current Id:-550Ma; Drain Source Voltage Vds:-250V; On Resistance Rds(On):3.15Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-5V; Power Rohs Compliant: Yes
***rchild Semiconductor
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switching DC/DC converters.
***emi
Power MOSFET, P-Channel, QFET®, -200 V, -0.67 A, 2.7 Ω, SOT-223
***et
Trans MOSFET P-CH 200V 0.67A 4-Pin(3+Tab) SOT-223 T/R
***Yang
Trans MOSFET P-CH 200V 0.67A 4-Pin(3+Tab) SOT-223 T/R - Product that comes on tape, but is not reele
***nell
MOSFET, P-CH, -400V, -0.67A, SOT-223-4; Transistor Polarity: P Channel; Continuous Drain Current Id: -670mA; Drain Source Voltage Vds: -200V; On Resistance Rds(on): 2.06ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage V
***rchild Semiconductor
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***emi
Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 0.85 A, 1.4 Ω, SOT-223
***(Formerly Allied Electronics)
Transistor, N-channel, QFET MOSFET, 200V, 0.85A, 140 Ohm at VGS 10V, SOT-223 | ON Semiconductor FQT4N20LTF
***ure Electronics
N-Channel 200 V 1.35 Ohm 5.2 nC Logic Mosfet - SOT-223
***Yang
Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel
***ment14 APAC
MOSFET, N CH, 200V, 0.85A, SOT-223-3; Transistor Polarity:N Channel; Continuous Drain Current Id:850mA; Source Voltage Vds:200V; On Resistance
***nell
MOSFET, N CH, 200V, 0.85A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 850mA; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 1.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2.2W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***icroelectronics
N-channel 200 V, 1.1 Ohm typ., 1 A STripFET(TM) II Power MOSFET in SOT-223 package
***ure Electronics
STN4NF20L: 200 V 1 A N-Ch. Low Gate Charge STripFET™ II Power Mosfet - SOT-223
***ical
Trans MOSFET N-CH 200V 1A 4-Pin(3+Tab) SOT-223 T/R
***ment14 APAC
MOSFET, N-CH, 200V, 1A, SOT-223-4; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Source Voltage Vds:200V; On Resistance
***nell
MOSFET, N-CH, 200V, 1A, SOT-223-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 1.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: StripFET II Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
型號 製造商 描述 庫存 價格
FQT4N25TF
DISTI # V72:2272_06301314		ON SemiconductorTrans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R190
  • 100:$0.3280
  • 25:$0.4244
  • 10:$0.5187
  • 1:$0.5764
FQT4N25TF
DISTI # V36:1790_06301314		ON SemiconductorTrans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R0
  • 4000000:$0.1747
  • 2000000:$0.1750
  • 400000:$0.1976
  • 40000:$0.2371
  • 4000:$0.2436
FQT4N25TF
DISTI # FQT4N25TFCT-ND		ON SemiconductorMOSFET N-CH 250V 0.83A SOT-223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1800In Stock
  • 1000:$0.2590
  • 500:$0.3238
  • 100:$0.4096
  • 10:$0.5340
  • 1:$0.6100
FQT4N25TF
DISTI # FQT4N25TFDKR-ND		ON SemiconductorMOSFET N-CH 250V 0.83A SOT-223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1800In Stock
  • 1000:$0.2590
  • 500:$0.3238
  • 100:$0.4096
  • 10:$0.5340
  • 1:$0.6100
FQT4N25TF
DISTI # FQT4N25TFTR-ND		ON SemiconductorMOSFET N-CH 250V 0.83A SOT-223
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 28000:$0.2012
  • 12000:$0.2122
  • 8000:$0.2279
  • 4000:$0.2436
FQT4N25TF
DISTI # 33368491		ON SemiconductorTrans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R12000
  • 4000:$0.1578
FQT4N25TF
DISTI # 30616253		ON SemiconductorTrans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R2690
  • 34:$0.7550
FQT4N25TF
DISTI # 25743590		ON SemiconductorTrans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R190
  • 37:$0.5764
FQT4N25TF
DISTI # FQT4N25TF		ON SemiconductorTrans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FQT4N25TF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 40000:$0.1607
  • 24000:$0.1648
  • 16000:$0.1669
  • 8000:$0.1691
  • 4000:$0.1702
FQT4N25TF
DISTI # FQT4N25TF		ON SemiconductorTrans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R - Bulk (Alt: FQT4N25TF)
RoHS: Compliant
Min Qty: 1316
Container: Bulk		Americas - 0
  • 13160:$0.2339
  • 6580:$0.2399
  • 3948:$0.2429
  • 2632:$0.2459
  • 1316:$0.2479
FQT4N25TF
DISTI # FQT4N25TF		ON SemiconductorTrans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R (Alt: FQT4N25TF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 40000:€0.1609
  • 24000:€0.1739
  • 16000:€0.1879
  • 8000:€0.2049
  • 4000:€0.2509
FQT4N25TF
DISTI # 82C4374		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,830MA I(D),SOT-223 ROHS COMPLIANT: YES0
  • 30000:$0.1940
  • 18000:$0.2020
  • 12000:$0.2170
  • 6000:$0.2320
  • 3000:$0.2520
  • 1:$0.2580
FQT4N25TF
DISTI # 31Y1564		ON SemiconductorMOSFET, N-CH, 250V, 0.83A, SOT-223-3,Transistor Polarity:N Channel,Continuous Drain Current Id:830mA,Drain Source Voltage Vds:250V,On Resistance Rds(on):1.38ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V RoHS Compliant: Yes2121
  • 1000:$0.2580
  • 500:$0.2830
  • 250:$0.3080
  • 100:$0.3330
  • 50:$0.4040
  • 25:$0.4750
  • 10:$0.5460
  • 1:$0.6670
FQT4N25TF.
DISTI # 27AC5849		Fairchild Semiconductor CorporationQF 250V 1.75OHM SOT223 ROHS COMPLIANT: YES0
  • 40000:$0.1660
  • 24000:$0.1700
  • 16000:$0.1720
  • 8000:$0.1750
  • 1:$0.1760
FQT4N25TF
DISTI # 512-FQT4N25TF		ON SemiconductorMOSFET 250V Single
RoHS: Compliant		16180
  • 1:$0.6600
  • 10:$0.5410
  • 100:$0.3300
  • 1000:$0.2550
  • 4000:$0.2180
  • 8000:$0.2030
  • 24000:$0.1920
FQT4N25TFFairchild Semiconductor CorporationPower Field-Effect Transistor, 0.83A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		70118
  • 1000:$0.2200
  • 500:$0.2400
  • 100:$0.2500
  • 25:$0.2600
  • 1:$0.2800
FQT4N25TFFairchild Semiconductor Corporation 32
    FQT4N25TF
    DISTI # 8075939P    		ON SemiconductorMOSFETFAIRCHILDFQT4N25TF, RL2040
    • 2000:£0.1710
    • 1000:£0.1860
    • 200:£0.2170
    • 100:£0.2470
    FQT4N25TF
    DISTI # 2453914    		ON SemiconductorMOSFET, N-CH, 250V, 0.83A, SOT-223-32986
    • 500:£0.1970
    • 250:£0.2260
    • 100:£0.2550
    • 10:£0.4620
    • 1:£0.5820
    FQT4N25TF
    DISTI # 2453914RL    		ON SemiconductorMOSFET, N-CH, 250V, 0.83A, SOT-223-3
    RoHS: Compliant    		0
    • 24000:$0.2950
    • 8000:$0.3130
    • 4000:$0.3360
    • 1000:$0.3920
    • 100:$0.5070
    • 10:$0.8320
    • 1:$1.0200
    FQT4N25TF
    DISTI # 2453914    		ON SemiconductorMOSFET, N-CH, 250V, 0.83A, SOT-223-3
    RoHS: Compliant    		2116
    • 24000:$0.2950
    • 8000:$0.3130
    • 4000:$0.3360
    • 1000:$0.3920
    • 100:$0.5070
    • 10:$0.8320
    • 1:$1.0200
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    可用性
    庫存:
    16
    訂購:
    1999
    輸入數量:
    FQT4N25TF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$0.66
    US$0.66
    10
    US$0.54
    US$5.41
    100
    US$0.33
    US$33.00
    1000
    US$0.26
    US$255.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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