IPA60R199CPXKSA1

Mfr. #:: IPA60R199CPXKSA1
製造商:: Infineon Technologies
描述:: MOSFET HIGH POWER_LEGACY
生命週期:: 製造商新產品
數據表:: IPA60R199CPXKSA1 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IPA60R199CPXKSA1 Datasheet IPA60R199CPXKSA1 Datasheet (P4-P6)IPA60R199CPXKSA1 Datasheet (P7-P9)IPA60R199CPXKSA1 Datasheet (P10)
ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

技術：: 矽

安裝方式：: 通孔

包裝/案例：: TO-220FP-3

通道數：: 1 Channel

晶體管極性：: N通道

配置：: 單身的

商品名：: 酷摩

打包：: 管子

高度：: 16.15 mm

長度：: 10.65 mm

晶體管類型：: 1 N-Channel

寬度：: 4.85 mm

品牌：: 英飛凌科技

產品類別：: MOSFET

子類別：: MOSFET

第 # 部分別名：: IPA60R199CP IPA6R199CPXK SP000094146

單位重量：: 0.211644 oz

Tags: IPA60R199C, IPA60R199, IPA60R19, IPA60R1, IPA60R, IPA60, IPA6, IPA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPA60R199CPXKSA1 描述

***p One Stop Global: Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220FP Tube

***ineon: CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:650V; On Resistance Rds(on):199mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:34W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:16A; Package / Case:TO-220; Power Dissipation Pd:34W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ical: Trans MOSFET N-CH 700V 20.2A 3-Pin(3+Tab) TO-220FP Tube

***ark: Mosfet, N-Ch, 650V, 20.2A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon SCT: CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS

***ineon: CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***ical: Trans MOSFET N-CH 700V 20.2A 3-Pin(3+Tab) TO-220FP Tube

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 8.0pF 50volts C0G +/-0.05pF

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***emi: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F

***Yang: Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube

*** Stop Electro: Power Field-Effect Transistor, 20.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, N-CH, 600V, 20.6A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***emi: N-Channel Power MOSFET, SUPERFET® II, FAST, 600V, 20.2A, 199mΩ, TO-220F

***Yang: Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 20.2A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N-CH, 600V, 20.2A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: SuperFET®II MOSFET is Fairchild’s brand-new high voltage super-junction MOSFET family, utilizes advanced charge-balance technology for outstandingly low on-state resistance and lower gate charge. This advanced MOSFET is tailored not only to minimize conduction loss but also to achieve superior switching performance. Besides these advantages, it also provides extremely higher dv/dt rate and bigger avalanche energy than conventional super-junction MOSFETs. SuperFET II MOSFET is suitable for various switching power applications aiming for system miniaturization and higher efficiency.

***ure Electronics: Single N-Channel 650 V 0.19 Ohm 87 nC CoolMOS Power Mosfet - TO-220-3FP

***ical: Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220FP Tube

***ponent Stockers USA: 20.7 A 600 V 0.19 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***roFlash: Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 20.7 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) mOhm = 190 / Gate-Source Voltage V = 20 / Fall Time ns = 4.5 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 67 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-220FP / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 34.5

***ment14 APAC: MOSFET, N, COOLMOS, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:20.7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):190mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:34.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:690mJ; Current Iar:20A; Current Id Max:20.7A; Current Idss Max:1mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:190mohm; Package / Case:TO-220AB; Power Dissipation Pd:34.5W; Power Dissipation Pd:34.5W; Pulse Current Idm:62.1A; Rate of Voltage Change dv / dt:50V/µs; Repetitive Avalanche Energy Max:1mJ; Termination Type:Through Hole; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.9V; Voltage Vgs th Min:2.1V

***icroelectronics: N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-220FP package

***ure Electronics: N-Channel 600 V 165 mO 60 nC Flange Mount MDmesh II Mosfet - TO-220FP

***et: Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FP Tube

***enic: 600V 20A 165m´Î@10V10A 35W 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

***ponent Stockers USA: 20 A 600 V 0.165 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***ark: Mosfet, N Ch, 600V, 20A, To220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.135Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 20A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Market price

型號	製造商	描述	庫存	價格
IPA60R199CPXKSA1 DISTI # IPA60R199CPXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 650V 16A TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1000:$1.9972 500:$2.3681 100:$2.9245 10:$3.5660 1:$3.9900
IPA60R199CPXK DISTI # IPA60R199CPXKSA1	Infineon Technologies AG	Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: IPA60R199CPXKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	500:$1.7900 1000:$1.7900 2000:$1.6900 3000:$1.5900 5000:$1.5900
IPA60R199CPXKSA1 DISTI # 33P7116	Infineon Technologies AG	MOSFET, N CHANNEL, 650V, 16A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,MSL:- RoHS Compliant: Yes	0	1:$3.4400 10:$2.9200 25:$2.7900 50:$2.6600 100:$2.5300 250:$2.4000 500:$2.1600
IPA60R199CP DISTI # 726-IPA60R199CP	Infineon Technologies AG	MOSFET N-Ch 600V 16A TO220FP-3 CoolMOS CP RoHS: Compliant	0	1:$3.4400 10:$2.9200 100:$2.5300 250:$2.4000 500:$2.1600
IPA60R199CPXKSA1 DISTI # 8977400P	Infineon Technologies AG	MOSFET N-CHANNEL 600V 16A COOLMOS TO220, TU	118	20:£1.9600 80:£1.8130 200:£1.6850 400:£1.5980
IPA60R199CPXKSA1 DISTI # 1663995	Infineon Technologies AG	MOSFET, N, TO-220 RoHS: Compliant	0	1:£2.4600 10:£1.8300 100:£1.7100 250:£1.6200 500:£1.5800

相關產品

圖片	型號	描述
	Mfr.#: IPA60R190E6 OMO.#: OMO-IPA60R190E6	MOSFET N-Ch 650V 20.2A TO220FP-3 CoolMOS E6
	Mfr.#: IPA60R190E6XKSA1 OMO.#: OMO-IPA60R190E6XKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 20.2A TO220
	Mfr.#: IPA60R190C6 , 2SD1802T-T OMO.#: OMO-IPA60R190C6-2SD1802T-T-1190	全新原裝
	Mfr.#: IPA60R190C6,IPA60R190E6, OMO.#: OMO-IPA60R190C6-IPA60R190E6--1190	全新原裝
	Mfr.#: IPA60R190C6S OMO.#: OMO-IPA60R190C6S-1190	全新原裝
	Mfr.#: IPA60R190E6,IPA65R650CE, OMO.#: OMO-IPA60R190E6-IPA65R650CE--1190	全新原裝
	Mfr.#: IPA60R190P6 6R190P6 OMO.#: OMO-IPA60R190P6-6R190P6-1190	全新原裝
	Mfr.#: IPA60R199CP,IPP60R199CP, OMO.#: OMO-IPA60R199CP-IPP60R199CP--1190	全新原裝
	Mfr.#: IPA60R199CPXKSA1INFINEON OMO.#: OMO-IPA60R199CPXKSA1INFINEON-1190	全新原裝
	Mfr.#: IPA60R190E6 OMO.#: OMO-IPA60R190E6-124	Darlington Transistors MOSFET N-Ch 650V 20.2A TO220FP-3 CoolMOS E6