BSC016N06NSTATMA1

BSC016N06NSTATMA1
Mfr. #:
BSC016N06NSTATMA1
製造商:
Infineon Technologies
描述:
MOSFET DIFFERENTIATED MOSFETS
生命週期:
製造商新產品
數據表:
BSC016N06NSTATMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
BSC016N06NSTATMA1 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
PG-TDSON-8
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
60 V
Id - 連續漏極電流:
100 A
Rds On - 漏源電阻:
1.6 mOhms
Vgs th - 柵源閾值電壓:
2.1 V
Vgs - 柵源電壓:
10 V
Qg - 門電荷:
71 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
139 W
配置:
單身的
頻道模式:
增強
打包:
捲軸
晶體管類型:
1 N-Channel
品牌:
英飛凌科技
正向跨導 - 最小值:
70 S
秋季時間:
9 ns
產品類別:
MOSFET
上升時間:
9 ns
出廠包裝數量:
5000
子類別:
MOSFET
典型關斷延遲時間:
35 ns
典型的開啟延遲時間:
19 ns
第 # 部分別名:
BSC016N06NST SP001657074
Tags
BSC016N06, BSC016, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
OptiMOS Power Transistor MOSFET N-Channel 60V 100A 8-Pin TDSON-FL T/R
***ical
Trans MOSFET N-CH 60V 31A Tape
***i-Key
DIFFERENTIATED MOSFETS
***ark
Mosfet, N-Ch, 60V, 100A, 167W, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0014Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 100A, 167W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:167W; Transistor Case Style:TDSON; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CAN N, 60V, 100A, 167W, TDSON; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0014ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:167W; Modello Case Transistor:TDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
型號 製造商 描述 庫存 價格
BSC016N06NSTATMA1
DISTI # V72:2272_19084605
Infineon Technologies AGBSC016N06NST4314
  • 3000:$1.2320
  • 1000:$1.3770
  • 500:$1.5209
  • 250:$1.5930
  • 100:$1.7700
  • 25:$2.0660
  • 10:$2.2950
  • 1:$2.8853
BSC016N06NSTATMA1
DISTI # V36:1790_19084605
Infineon Technologies AGBSC016N06NST0
  • 5000000:$1.0790
  • 2500000:$1.0800
  • 500000:$1.1490
  • 50000:$1.2490
  • 5000:$1.2640
BSC016N06NSTATMA1
DISTI # BSC016N06NSTATMA1CT-ND
Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
14918In Stock
  • 1000:$1.4525
  • 500:$1.7530
  • 100:$2.1336
  • 10:$2.6540
  • 1:$2.9500
BSC016N06NSTATMA1
DISTI # BSC016N06NSTATMA1DKR-ND
Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
14918In Stock
  • 1000:$1.4525
  • 500:$1.7530
  • 100:$2.1336
  • 10:$2.6540
  • 1:$2.9500
BSC016N06NSTATMA1
DISTI # BSC016N06NSTATMA1TR-ND
Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
5000In Stock
  • 5000:$1.2643
BSC016N06NSTATMA1
DISTI # 32689028
Infineon Technologies AGBSC016N06NST5000
  • 5000:$1.1842
BSC016N06NSTATMA1
DISTI # 32445508
Infineon Technologies AGBSC016N06NST4314
  • 6:$2.8853
BSC016N06NSTATMA1
DISTI # BSC016N06NSTATMA1
Infineon Technologies AGOptiMOS Power Transistor MOSFET N-Channel 60V 100A 8-Pin TDSON-FL T/R - Tape and Reel (Alt: BSC016N06NSTATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 30000:$1.0900
  • 50000:$1.0900
  • 10000:$1.1900
  • 20000:$1.1900
  • 5000:$1.2900
BSC016N06NSTATMA1
DISTI # SP001657074
Infineon Technologies AGOptiMOS Power Transistor MOSFET N-Channel 60V 100A 8-Pin TDSON-FL T/R (Alt: SP001657074)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 50000:€1.0489
  • 30000:€1.1239
  • 20000:€1.2108
  • 10000:€1.3119
  • 5000:€1.5739
BSC016N06NSTATMA1
DISTI # 93AC6983
Infineon Technologies AGMOSFET, N-CH, 60V, 100A, 167W, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes2429
  • 1000:$1.3500
  • 500:$1.6400
  • 250:$1.7500
  • 100:$1.8700
  • 50:$2.0200
  • 25:$2.1800
  • 10:$2.3300
  • 1:$2.7500
BSC016N06NSTATMA1
DISTI # 726-BSC016N06NSTATM1
Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant
27859
  • 1:$2.7200
  • 10:$2.3100
  • 100:$1.8500
  • 500:$1.6200
  • 1000:$1.3400
BSC016N06NSTATMA1
DISTI # 2986440
Infineon Technologies AGMOSFET, N-CH, 60V, 100A, 167W, TDSON
RoHS: Compliant
2429
  • 1000:$1.9000
  • 500:$1.9700
  • 250:$2.2100
  • 100:$2.3600
  • 10:$2.8600
  • 1:$3.7300
BSC016N06NSTATMA1
DISTI # 2986440
Infineon Technologies AGMOSFET, N-CH, 60V, 100A, 167W, TDSON5454
  • 500:£1.2400
  • 250:£1.3900
  • 100:£1.4900
  • 10:£1.8100
  • 1:£2.3700
圖片 型號 描述
MMBT5550LT1G

Mfr.#: MMBT5550LT1G

OMO.#: OMO-MMBT5550LT1G

Bipolar Transistors - BJT SS HV XSTR NPN 160V
BSC016N06NS

Mfr.#: BSC016N06NS

OMO.#: OMO-BSC016N06NS

MOSFET N-Ch 60V 100A DSON-8 OptiMOS
ATP302-TL-H

Mfr.#: ATP302-TL-H

OMO.#: OMO-ATP302-TL-H

MOSFET POWER MOSFET
BSH201,215

Mfr.#: BSH201,215

OMO.#: OMO-BSH201-215

MOSFET TAPE7 MOSFET
DFLS260-7

Mfr.#: DFLS260-7

OMO.#: OMO-DFLS260-7

Schottky Diodes & Rectifiers 2.0A 60V HI EFFICNCY
ATMEGA64M1-AU

Mfr.#: ATMEGA64M1-AU

OMO.#: OMO-ATMEGA64M1-AU

8-bit Microcontrollers - MCU 16 MHz, 85DEG
STM32F405RGT6

Mfr.#: STM32F405RGT6

OMO.#: OMO-STM32F405RGT6

ARM Microcontrollers - MCU ARM M4 1024 FLASH 168 Mhz 192kB SRAM
LPC1517JBD48E

Mfr.#: LPC1517JBD48E

OMO.#: OMO-LPC1517JBD48E

ARM Microcontrollers - MCU LPC1517JBD48/LQFP48///TRAY SINGLE DP BAKEABLE
CRE2512-FZ-R005E-2

Mfr.#: CRE2512-FZ-R005E-2

OMO.#: OMO-CRE2512-FZ-R005E-2

Current Sense Resistors - SMD .005 Ohms 2W 1% AEC-Q200 2512
ATP302-TL-H

Mfr.#: ATP302-TL-H

OMO.#: OMO-ATP302-TL-H-ON-SEMICONDUCTOR

RF Bipolar Transistors MOSFET POWER MOSFET
可用性
庫存:
27
訂購:
2010
輸入數量:
BSC016N06NSTATMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$2.72
US$2.72
10
US$2.31
US$23.10
100
US$1.85
US$185.00
500
US$1.62
US$810.00
1000
US$1.34
US$1 340.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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