SI8461DB-T2-E1

Name: Vishay - SI8461DB-T2-E1
Brand: Vishay
SKU: OMO-3391561
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI8461DB-T2-E1
製造商:: Vishay
描述:: MOSFET P-CH 20V MICROFOOT
生命週期:: 製造商新產品
數據表:: SI8461DB-T2-E1 數據表
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HTML Datasheet:: SI8461DB-T2-E1 Datasheet SI8461DB-T2-E1 Datasheet (P4-P6)SI8461DB-T2-E1 Datasheet (P7-P8)
ECAD Model:

產品屬性
屬性值

製造商: 威世矽

產品分類: FET - 單

系列: 溝槽FETR

打包: Digi-ReelR 替代包裝

安裝方式: 貼片/貼片

包裝盒: 4-XFBGA, CSPBGA

技術: 矽

工作溫度: -55°C ~ 150°C (TJ)

安裝型: 表面貼裝

通道數: 1 Channel

供應商-設備-包: 4-Microfoot

配置: 單身的

FET型: MOSFET P 溝道，金屬氧化物

最大功率: 780mW

晶體管型: 1 P-Channel

漏源電壓 Vdss: 20V

輸入電容-Ciss-Vds: 610pF @ 10V

FET-Feature: 標準

Current-Continuous-Drain-Id-25°C: -

Rds-On-Max-Id-Vgs: 100 mOhm @ 1.5A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

柵極電荷-Qg-Vgs: 24nC @ 8V

鈀功耗: 1.8 W

最高工作溫度: + 85 C

最低工作溫度: - 40 C

秋季時間: 10 ns

上升時間: 25 ns

VGS-柵極-源極-電壓: 8 V

Id 連續漏極電流: - 3.7 A

Vds-漏-源-擊穿電壓: - 20 V

Rds-On-Drain-Source-Resistance: 136 mOhms

晶體管極性: P-通道

典型關斷延遲時間: 35 ns

典型開啟延遲時間: 15 ns

Qg-門電荷: 9.5 nC

正向跨導最小值: 7 S

Tags: SI8461D, SI8461, SI846, SI84, SI8

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

型號	製造商	描述	庫存	價格
SI8461DB-T2-E1 DISTI # V72:2272_09216563	Vishay Intertechnologies	Trans MOSFET P-CH 20V 2.5A 4-Pin Micro Foot T/R RoHS: Compliant	788	75000:$0.2259 30000:$0.2265 15000:$0.2290 6000:$0.2329 3000:$0.2344 1000:$0.2451 500:$0.2655 250:$0.3049 100:$0.3317 50:$0.3570 25:$0.4267 10:$0.4364 1:$0.5067
SI8461DB-T2-E1 DISTI # SI8461DB-T2-E1TR-ND	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.2392
SI8461DB-T2-E1 DISTI # SI8461DB-T2-E1CT-ND	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI8461DB-T2-E1 DISTI # SI8461DB-T2-E1DKR-ND	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI8461DB-T2-E1 DISTI # 25790142	Vishay Intertechnologies	Trans MOSFET P-CH 20V 2.5A 4-Pin Micro Foot T/R RoHS: Compliant	788	500:$0.2655 250:$0.3049 100:$0.3317 50:$0.3570 34:$0.4267
SI8461DB-T2-E1 DISTI # 35R6249	Vishay Intertechnologies	P CHANNEL MOSFET, -20V, 3.7A,Transistor Polarity:P Channel,Continuous Drain Current Id:-3.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):100mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Product Range:- , RoHS Compliant: Yes	0
SI8461DB-T2-E1 DISTI # 35R0088	Vishay Intertechnologies	MOSFET, P-CH, -20V, -3.7A, MICRO FOOT-4,Transistor Polarity:P Channel,Continuous Drain Current Id:-3.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.083ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V , RoHS Compliant: Yes	0
SI8461DB-T2-E1. DISTI # 15AC0305	Vishay Intertechnologies	Transistor Polarity:P Channel,Continuous Drain Current Id:-3.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):100mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:780mW,No. of Pins:4Pins , RoHS Compliant: No	0
SI8461DB-T2-E1 DISTI # 70617007	Vishay Siliconix	SI8461DB-T2-E1 P-channel MOSFET Transistor,3 A,20 V,4-Pin MICRO FOOT RoHS: Compliant	0	300:$0.4500 600:$0.4000 1500:$0.3500 3000:$0.3200
SI8461DB-T2-E1 DISTI # 781-SI8461DB-E1	Vishay Intertechnologies	MOSFET -20V Vds 8V Vgs MICRO FOOT 1 x 1 RoHS: Compliant	1314	1:$0.6000 10:$0.4790 100:$0.3640 500:$0.3000 1000:$0.2510 3000:$0.2500
SI8461DB-T2-E1	Vishay Siliconix	2500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	3033	1100:$0.1625 232:$0.1820 1:$0.5200
SI8461DB-T2-E1	Vishay Intertechnologies	2500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	2400	2223:$0.3150 445:$0.3600 1:$0.9000
SI8461DBT2E1	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SI8461DB-T2-E1	Vishay Intertechnologies	INSTOCK	1140
SI8461DB-T2-E1 DISTI # C1S803601645333	Vishay Intertechnologies	MOSFETs RoHS: Compliant	788	100:$0.3340 50:$0.3610 25:$0.4286 10:$0.4384
SI8461DB-T2-E1 DISTI # 1781671	Vishay Intertechnologies	P CHANNEL MOSFET, -20V, 3.7A RoHS: Compliant	0	20:$0.8620 100:$0.7140 500:$0.5590 1000:$0.4600 2500:$0.3910 5000:$0.3700
SI8461DB-T2-E1 DISTI # 1781671	Vishay Intertechnologies	P CHANNEL MOSFET, -20V, 3.7A RoHS: Compliant	0	3000:£0.2230

相關產品

圖片

型號

描述

Mfr.#: SI8461DB-T2-E1.

OMO.#: OMO-SI8461DB-T2-E1--1190

Transistor Polarity:P Channel, Continuous Drain Current Id:-3.7A, Drain Source Voltage Vds:-20V, On Resistance Rds(on):100mohm, Rds(on) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:-1V, Power D

Mfr.#: SI8461DB

OMO.#: OMO-SI8461DB-1190

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