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SISH625DN-T1-GE3

SISH625DN-T1-GE3
Mfr. #:
SISH625DN-T1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET -30V Vds; 20V Vgs PowerPAK 1212-8SH
生命週期:
製造商新產品
數據表:
SISH625DN-T1-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
SISH625DN-T1-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
PowerPAK1212-8
通道數：
1 Channel
晶體管極性：
P-通道
Vds - 漏源擊穿電壓：
30 V
Id - 連續漏極電流：
35 A
Rds On - 漏源電阻：
7 mOhms
Vgs th - 柵源閾值電壓：
- 2.5 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
126 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
52 W
配置：
單身的
頻道模式：
增強
商品名：
TrenchFET、PowerPAK
打包：
捲軸
系列：
情報局
晶體管類型：
1 P-Channel
品牌：
威世 / Siliconix
正向跨導 - 最小值：
47 S
秋季時間：
10 ns
產品類別：
MOSFET
上升時間：
13 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
55 ns
典型的開啟延遲時間：
15 ns
Tags
SISH6, SISH, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
型號 製造商 描述 庫存 價格
SISH625DN-T1-GE3
DISTI # V72:2272_22759345		Vishay IntertechnologiesP-Channel 30 V (D-S) MOSFET PowerPAK 1212-8SH 1G , 7 m @ 10Vm @ 7.5V 11 m @ 4.5V5444
  • 3000:$0.2128
  • 1000:$0.2554
  • 500:$0.3187
  • 250:$0.3527
  • 100:$0.3847
  • 25:$0.4546
  • 10:$0.5556
  • 1:$0.6608
SISH625DN-T1-GE3
DISTI # SISH625DN-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CHAN 30 V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4148In Stock
  • 1000:$0.2769
  • 500:$0.3461
  • 100:$0.4378
  • 10:$0.5710
  • 1:$0.6500
SISH625DN-T1-GE3
DISTI # SISH625DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CHAN 30 V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4148In Stock
  • 1000:$0.2769
  • 500:$0.3461
  • 100:$0.4378
  • 10:$0.5710
  • 1:$0.6500
SISH625DN-T1-GE3
DISTI # SISH625DN-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CHAN 30 V POWERPAK 1212
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 30000:$0.2128
  • 15000:$0.2184
  • 6000:$0.2268
  • 3000:$0.2436
SISH625DN-T1-GE3
DISTI # 32638894		Vishay IntertechnologiesP-Channel 30 V (D-S) MOSFET PowerPAK 1212-8SH 1G , 7 m @ 10Vm @ 7.5V 11 m @ 4.5V6000
  • 6000:$0.2487
SISH625DN-T1-GE3
DISTI # 31085725		Vishay IntertechnologiesP-Channel 30 V (D-S) MOSFET PowerPAK 1212-8SH 1G , 7 m @ 10Vm @ 7.5V 11 m @ 4.5V5444
  • 3000:$0.2128
  • 1000:$0.2554
  • 500:$0.3187
  • 250:$0.3527
  • 100:$0.3847
  • 32:$0.4546
SISH625DN-T1-GE3
DISTI # SISH625DN-T1-GE3		Vishay Intertechnologies- Tape and Reel (Alt: SISH625DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.2049
  • 30000:$0.2099
  • 18000:$0.2159
  • 12000:$0.2249
  • 6000:$0.2319
SISH625DN-T1-GE3
DISTI # SISH625DN-T1-GE3		Vishay Intertechnologies(Alt: SISH625DN-T1-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.2679
  • 500:€0.2719
  • 100:€0.2769
  • 50:€0.2879
  • 25:€0.3109
  • 10:€0.3619
  • 1:€0.5309
SISH625DN-T1-GE3
DISTI # 81AC3498		Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET0
  • 50000:$0.2070
  • 30000:$0.2160
  • 20000:$0.2320
  • 10000:$0.2480
  • 5000:$0.2690
  • 1:$0.2760
SISH625DN-T1-GE3
DISTI # 99AC9586		Vishay IntertechnologiesMOSFET, P-CH, -30V, -35A, 150DEG C, 52W,Transistor Polarity:P Channel,Continuous Drain Current Id:-35A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0056ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,RoHS Compliant: Yes50
  • 1000:$0.2590
  • 500:$0.3230
  • 250:$0.3580
  • 100:$0.3920
  • 50:$0.4330
  • 25:$0.4750
  • 10:$0.5160
  • 1:$0.6460
SISH625DN-T1-GE3
DISTI # 78-SISH625DN-T1-GE3		Vishay IntertechnologiesMOSFET -30V Vds,20V Vgs PowerPAK 1212-8SH
RoHS: Compliant		5756
  • 1:$0.6300
  • 10:$0.5100
  • 100:$0.3870
  • 500:$0.3200
  • 1000:$0.2560
  • 3000:$0.2310
  • 6000:$0.2160
  • 9000:$0.2080
  • 24000:$0.2000
SISH625DN-T1-GE3
DISTI # 3019136		Vishay IntertechnologiesMOSFET, P-CH, -30V, -35A, 150DEG C, 52W45
  • 500:£0.2320
  • 250:£0.2570
  • 100:£0.2810
  • 10:£0.4110
  • 1:£0.5310
SISH625DN-T1-GE3
DISTI # 3019136		Vishay IntertechnologiesMOSFET, P-CH, -30V, -35A, 150DEG C, 52W
RoHS: Compliant		45
  • 1000:$0.3620
  • 500:$0.4580
  • 250:$0.5100
  • 100:$0.5630
  • 25:$0.7570
  • 5:$0.8290
圖片 型號 描述
ATECC608A-SSHDA-T

Mfr.#: ATECC608A-SSHDA-T

OMO.#: OMO-ATECC608A-SSHDA-T

 Security ICs / Authentication ICs ECC/ECDSA/ECDHE I2C SOIC T/R
SP1326-01LTG

Mfr.#: SP1326-01LTG

OMO.#: OMO-SP1326-01LTG

 TVS Diodes / ESD Suppressors 15pF 30kV SOD-523 BI-DIR DIS TVS DIODE
ATTINY3217-MFR

Mfr.#: ATTINY3217-MFR

OMO.#: OMO-ATTINY3217-MFR

 8-bit Microcontrollers - MCU 20MHz, 32KB, QFN24, Ind 125C, Green, T&R
BMD-340-A-R

Mfr.#: BMD-340-A-R

OMO.#: OMO-BMD-340-A-R

 Bluetooth Modules (802.15.1) BMD-340-A-R with nRF52840 processor
ATTINY3217-MFR

Mfr.#: ATTINY3217-MFR

OMO.#: OMO-ATTINY3217-MFR-MICROCHIP-TECHNOLOGY

 20MHz, 32KB, QFN24, Ind 125C, Green, T&R
BMD-340-A-R

Mfr.#: BMD-340-A-R

OMO.#: OMO-BMD-340-A-R-RIGADO

 BLUETOOTH LOW ENERGY 5.0 MODULE
ATECC608A-SSHDA-T

Mfr.#: ATECC608A-SSHDA-T

OMO.#: OMO-ATECC608A-SSHDA-T-MICROCHIP-TECHNOLOGY

 IC AUTHENTICATION CHIP 8SOIC
SP1326-01LTG

Mfr.#: SP1326-01LTG

OMO.#: OMO-SP1326-01LTG-LITTELFUSE

 1Ch 30KV 5V bidir TVS Diode Array SOD523
FCSL20R005FER

Mfr.#: FCSL20R005FER

OMO.#: OMO-FCSL20R005FER-OHMITE

 Resistors FCSL Series Metal Foil Power Rating 1W Tape Reel Resistance 5 mOhms
RC0603JR-070RL

Mfr.#: RC0603JR-070RL

OMO.#: OMO-RC0603JR-070RL-YAGEO

 Thick Film Resistors - SMD ZERO OHM JUMPER
可用性
庫存:
Available
訂購:
1988
輸入數量:
SISH625DN-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$0.63
US$0.63
10
US$0.51
US$5.10
100
US$0.39
US$38.70
500
US$0.32
US$160.00
1000
US$0.26
US$256.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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