IRG4PC30UPBF

IRG4PC30UPBF
Mfr. #:
IRG4PC30UPBF
製造商:
Infineon Technologies
描述:
IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT
生命週期:
製造商新產品
數據表:
IRG4PC30UPBF 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRG4PC30UPBF DatasheetIRG4PC30UPBF Datasheet (P4-P6)IRG4PC30UPBF Datasheet (P7-P9)
ECAD Model:
產品屬性
屬性值
製造商:
英飛凌
產品分類:
IGBT晶體管
RoHS:
Y
技術:
包裝/案例:
TO-247-3
安裝方式:
通孔
配置:
單身的
集電極-發射極電壓 VCEO 最大值:
600 V
集電極-發射極飽和電壓:
2.1 V
最大柵極發射極電壓:
20 V
25 C 時的連續集電極電流:
23 A
Pd - 功耗:
100 W
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
打包:
管子
連續集電極電流 Ic 最大值:
23 A
高度:
20.3 mm
長度:
15.9 mm
寬度:
5.3 mm
品牌:
英飛凌科技
產品類別:
IGBT晶體管
出廠包裝數量:
400
子類別:
IGBT
第 # 部分別名:
SP001536064
單位重量:
1.340411 oz
Tags
IRG4PC30U, IRG4PC3, IRG4PC, IRG4P, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronics
INFINEON IRG4PC30U IGBT Single Transistor, 23 A, 2.5 V, 100 W, 600 V, TO-247, 3 Pins
***ineon SCT
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:23A; Collector Emitter Saturation Voltage, Vce(sat):2.1V; Power Dissipation, Pd:100W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***nell
IGBT, TO-247; DC Collector Current: 23A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 100W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 23A; Current Temperature: 25°C; Fall Time Max: 97ns; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 100W; Pulsed Current Icm: 92A; Rise Time: 9.6ns; Transistor Polarity: N Channel; Transistor Type: IGBT
***el Electronic
Inductor RF Chip Thin Film 16nH 3% 500MHz 12Q-Factor 200mA 950mOhm DCR 0201 T/R
***ure Electronics
IRG4PC30KDPBF Series 600 V 16 A N-Channel UltraFast IGBT - TO-247AC
*** Source Electronics
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) | IGBT 600V 28A 100W TO247AC
***ark
IGBT; Transistor Type:IGBT; Continuous Collector Current, Ic:28A; Power Dissipation, Pd:100W; Collector Emitter Voltage, V(br)ceo:600V; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Leaded Process Compatible:No RoHS Compliant: No
***ment14 APAC
IGBT, W/DIODE, 1200V, 60A, TO247AC; Transistor Type:IGBT; DC Collector Current:28A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:28A; Fall Time Max:120ns; Package / Case:TO-247AC; Power Dissipation Max:100W; Power Dissipation Pd:100W; Pulsed Current Icm:58A; Rise Time:42ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***Yang
TO-247, COMP, N-CH 600V SMPS II SERIES IGBT W/STEALTH DIODE - Bulk
***i-Key
IGBT N-CH SMPS 600V 28A TO247
***ser
IGBTs Comp, N-Ch 600V
***i-Key Marketplace
N-CHANNEL IGBT
***el Nordic
Contact for details
***et
TO-247, SINGLE, N-CHANNEL 600V SMPS II SERIES IGBT
***i-Key
IGBT 600V 28A 125W TO247
***ser
IGBTs Sgl, N-Ch 600V
***i-Key Marketplace
N-CHANNEL IGBT
***el Nordic
Contact for details
***ure Electronics
IRG4PC30 Series 600 V 17 A N-Channel Fast CoPack IGBT - TO-247AC
***ineon SCT
600V Fast 1-8 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.59 V Current release time: 83 ns Power dissipation: 100 W
***nell
IGBT, SINGLE, N-CH, 600V, 31A, TO-247AC; DC Collector Current: 31A; Collector Emitter Saturation Voltage Vce(on): 1.99V; Power Dissipation Pd: 100W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; N
***ineon SCT
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***ow.cn
Trans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(3+Tab) TO-247AC Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC
***ineon
Target Applications: Air Conditioner; Fan; Pump; Refridgeration
***ure Electronics
1-5 kHz Higher Efficiency Through Hole IGBT - TO-247-3
*** Electronic Components
IGBT Transistors 600V Fast 1-8kHz
***i-Key Marketplace
IRG4PC30 - DISCRETE IGBT WITHOUT
***nell
IGBT, 600V, 31A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N; Current Ic Continuous a Max:31A; Voltage, Vce Sat Max:1.9V; Power Dissipation:100W; Case Style:TO-247AC; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:120A; No. of Pins:3; Power, Pd:100W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:180ns; Time, Rise:15ns; Transistors, No. of:1
***ical
Trans IGBT Chip N-CH 600V 34A 3-Pin(3+Tab) TO-247 Rail
***nell
IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:34A; Voltage, Vce Sat Max:2.7V; Power Dissipation:125W; Case Style:TO-247; Termination Type:Through Hole; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:56A; No. of Pins:3; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:45ns; Time, Fall Typ:45ns; Time, Rise:11ns; Transistors, No. of:1
***rchild Semiconductor
The HGTP7N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
型號 製造商 描述 庫存 價格
IRG4PC30UPBF
DISTI # 30560295
Infineon Technologies AGTrans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-247AC Tube17265
  • 2500:$1.7136
  • 1000:$1.8043
  • 500:$2.1370
  • 250:$2.3789
  • 100:$2.5099
  • 10:$2.8930
IRG4PC30UPBF
DISTI # IRG4PC30UPBF-ND
Infineon Technologies AGIGBT 600V 23A 100W TO247AC
RoHS: Compliant
Min Qty: 4000
Container: Bag
Limited Supply - Call
  • 4000:$1.7821
IRG4PC30UPBF
DISTI # SP001536064
Infineon Technologies AGTrans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-247AC (Alt: SP001536064)
RoHS: Compliant
Min Qty: 1
Europe - 3300
  • 1:€1.8900
  • 10:€1.6900
  • 25:€1.5900
  • 50:€1.4900
  • 100:€1.4900
  • 500:€1.3900
  • 1000:€1.2900
IRG4PC30UPBF
DISTI # IRG4PC30UPBF
Infineon Technologies AGTrans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRG4PC30UPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tube
Americas - 0
  • 4000:$1.6900
  • 4800:$1.6900
  • 8800:$1.5900
  • 20000:$1.4900
  • 40000:$1.4900
IRG4PC30UPBF
DISTI # 63J7513
Infineon Technologies AGSINGLE IGBT, 600V, 23A,DC Collector Current:23A,Collector Emitter Saturation Voltage Vce(on):2.52V,Power Dissipation Pd:100W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- , RoHS Compliant: Yes878
  • 1:$3.3700
  • 10:$2.8700
  • 25:$2.7400
  • 50:$2.6200
  • 100:$2.4900
  • 250:$2.3600
  • 500:$2.1200
IRG4PC30UPBF
DISTI # 70017607
Infineon Technologies AG600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE
RoHS: Compliant
0
  • 4000:$2.5810
IRG4PC30UPBFInternational Rectifier 
RoHS: Not Compliant
4460
  • 1000:$1.6200
  • 500:$1.7000
  • 100:$1.7700
  • 25:$1.8500
  • 1:$1.9900
IRG4PC30UPBF
DISTI # 942-IRG4PC30UPBF
Infineon Technologies AGIGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT
RoHS: Compliant
3704
  • 1:$3.3700
  • 10:$2.8700
  • 100:$2.4900
  • 250:$2.3600
  • 500:$2.1200
  • 1000:$1.7900
  • 2500:$1.7000
IRG4PC30UPBF
DISTI # 5410890
Infineon Technologies AGTRANSISTOR IGBT N-CH 600V 23A TO247AC, EA426
  • 1:£2.2300
  • 10:£2.1500
  • 20:£2.0600
IRG4PC30UPBF
DISTI # IRG4PC30UPBF
Infineon Technologies AGTransistor: IGBT,600V,23A,100W,TO247-355
  • 1:$3.0600
  • 3:$2.7100
  • 10:$2.2300
  • 50:$1.9400
IRG4PC30UPBFInternational Rectifier 
RoHS: Compliant
Europe - 2875
    IRG4PC30UPBF
    DISTI # 8650500
    Infineon Technologies AGIGBT, 600V, 23A, TO-247AC
    RoHS: Compliant
    203
    • 1:£2.2700
    • 10:£2.1000
    • 100:£1.9300
    • 250:£1.8300
    • 500:£1.6300
    IRG4PC30UPBF
    DISTI # C1S322000604416
    Infineon Technologies AGIGBT Chip
    RoHS: Compliant
    17265
    • 1000:$1.8200
    • 500:$1.9600
    • 100:$2.5700
    • 50:$2.8000
    • 10:$3.4000
    • 1:$5.2500
    IRG4PC30UPBF
    DISTI # 8650500
    Infineon Technologies AGIGBT, 600V, 23A, TO-247AC
    RoHS: Compliant
    273
    • 1:$5.3400
    • 10:$4.5500
    • 100:$3.9400
    • 250:$3.7400
    • 500:$3.3500
    • 1000:$2.8400
    • 2500:$2.7900
    圖片 型號 描述
    MC34072DR2G

    Mfr.#: MC34072DR2G

    OMO.#: OMO-MC34072DR2G

    Operational Amplifiers - Op Amps 3-44V Dual 5mV VIO Commercial Temp
    BC846BLT1G

    Mfr.#: BC846BLT1G

    OMO.#: OMO-BC846BLT1G

    Bipolar Transistors - BJT 100mA 80V NPN
    1N5919BG

    Mfr.#: 1N5919BG

    OMO.#: OMO-1N5919BG

    Zener Diodes 5.6V 3W
    STGF3NC120HD

    Mfr.#: STGF3NC120HD

    OMO.#: OMO-STGF3NC120HD

    IGBT Transistors N-Ch 1200 Volt 3 Amp
    2N7000

    Mfr.#: 2N7000

    OMO.#: OMO-2N7000

    MOSFET N-CHANNEL 60V 200mA
    FQP30N06L

    Mfr.#: FQP30N06L

    OMO.#: OMO-FQP30N06L

    MOSFET 60V N-Channel QFET Logic Level
    IRFP450PBF

    Mfr.#: IRFP450PBF

    OMO.#: OMO-IRFP450PBF

    MOSFET N-CH 500V HEXFET MOSFET
    74HC423D,653

    Mfr.#: 74HC423D,653

    OMO.#: OMO-74HC423D-653

    Monostable Multivibrator DUAL RETRIG MONO MULTIVIBRATOR
    1N5919BG

    Mfr.#: 1N5919BG

    OMO.#: OMO-1N5919BG-ON-SEMICONDUCTOR

    Zener Diodes 5.6V 3W
    MC34072DR2G

    Mfr.#: MC34072DR2G

    OMO.#: OMO-MC34072DR2G-ON-SEMICONDUCTOR

    Operational Amplifiers - Op Amps 3-44V Dual 5mV VIO Commercial Temp
    可用性
    庫存:
    Available
    訂購:
    1986
    輸入數量:
    IRG4PC30UPBF的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$3.37
    US$3.37
    10
    US$2.87
    US$28.70
    100
    US$2.49
    US$249.00
    250
    US$2.36
    US$590.00
    500
    US$2.12
    US$1 060.00
    1000
    US$1.79
    US$1 790.00
    2500
    US$1.70
    US$4 250.00
    從...開始
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