T1G4004532-FL

Mfr. #:: T1G4004532-FL
製造商:: Qorvo
描述:: RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
生命週期:: 製造商新產品
數據表:: T1G4004532-FL 數據表
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產品屬性
屬性值

製造商：: 科沃

產品分類：: 射頻 JFET 晶體管

RoHS：: Y

技術：: 氮化鎵碳化矽

Vds - 漏源擊穿電壓：: 32 V

Vgs - 柵源擊穿電壓：: 100 V

Pd - 功耗：: 45 W

安裝方式：: 貼片/貼片

打包：: 托盤

配置：: 單身的

高度：: 4.064 mm

長度：: 20.3 mm

寬度：: 5.842 mm

品牌：: 科沃

柵源截止電壓：: - 2.9 V

濕氣敏感：: 是的

產品類別：: 射頻 JFET 晶體管

出廠包裝數量：: 36

子類別：: 晶體管

第 # 部分別名：: 1092442

Tags: T1G4004, T1G400, T1G4, T1G

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

T1G4004532-FL 描述

***W: RF Power Transistor, DC to 3.5 GHz, 45 W, 19 dB, 32V, GaN

T1G4004532-FL 更多信息

T1G4004532 GaN RF Power Transistors: Qorvo T1G4004532 GaN RF Power Transistors are 45W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5GHz. The device is constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant.Learn More

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

型號	製造商	描述	庫存	價格
T1G4004532-FL DISTI # 772-T1G4004532-FL	Qorvo	RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB RoHS: Compliant	30	1:$240.0000 25:$216.6000

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