FCP11N60F

Mfr. #:: FCP11N60F
製造商:: ON Semiconductor
描述:: MOSFET N-CH 600V 11A TO-220
生命週期:: 製造商新產品
數據表:: FCP11N60F 數據表
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ECAD Model:

產品屬性
屬性值

製造商: 仙童

產品分類: 集成電路芯片

系列: 超場效應晶體管

打包: 管子

單位重量: 0.063493 oz

安裝方式: 通孔

包裝盒: TO-220-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 125 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 56 ns

上升時間: 98 ns

VGS-柵極-源極-電壓: 30 V

Id 連續漏極電流: 11 A

Vds-漏-源-擊穿電壓: 600 V

Rds-On-Drain-Source-Resistance: 380 mOhms

晶體管極性: N通道

典型關斷延遲時間: 119 ns

典型開啟延遲時間: 34 ns

正向跨導最小值: 9.7 S

通道模式: 增強

Tags: FCP11N60, FCP11N, FCP11, FCP1, FCP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FCP11N60F 描述

***Semiconductor: N-Channel Power MOSFET, SUPERFET®, FRFET®, 600 V, 11 A, 380 mΩ, TO-220

***p One Stop Global: Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Rail

***Components: MOSFET N-Channel 600V 11A TO220AB

***i-Key: MOSFET N-CH 600V 11A TO-220

***ukat: N-Ch 600V 11A 125W 0,38R TO220

***ser: MOSFETs 600V, NCH MOSFET

***eco: 3 LD PLASTIC W/EXPOSED HEATSNK <AZ

***inecomponents.com: 600V N-Channel SuperFET

***ure Electronics: 600V, NCH MOSFET

***ark: MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:11A; Resistance, Rds On:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination ;RoHS Compliant: Yes

***nell: MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:11A; Resistance, Rds On:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Current, Idm Pulse:33A; Max Repetitive Avalanche Energy:12.5mJ; Pin Configuration:1(G), 2(D), 3(S); Power, Pd:125W; Voltage, Rds Measurement:10V; Voltage, Vds Max:650V; Voltage, Vgs Max:5V

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):380mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Package / Case:TO-220; Pin Configuration:1(G), 2(D), 3(S); Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:33A; Repetitive Avalanche Energy Max:12.5mJ; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

***th Star Micro: SuperFETTM is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Product Highlights: 650V @TJ = 150C Typ. RDS(on) = 0.32W Fast Recovery Type (trr = 120ns) Ultra Low Gate Charge (typ. Qg = 40nC) Low Effective Output Capacitance (typ. Cosseff.=95pF) 100% avalanche tested

Market price

型號	製造商	描述	庫存	價格
FCP11N60F DISTI # V99:2348_06359358	ON Semiconductor	600V N-CHANNEL SUPERFET	300	5000:$1.4630 2000:$1.4769 1000:$1.5550 500:$1.8120 250:$2.0040 100:$2.1140 10:$2.4000 1:$2.7620
FCP11N60F DISTI # FCP11N60FFS-ND	ON Semiconductor	MOSFET N-CH 600V 11A TO-220 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1000:$1.9176 500:$2.2604 100:$2.7745 10:$3.3680 1:$3.7600
FCP11N60F DISTI # 30293559	ON Semiconductor	600V N-CHANNEL SUPERFET	300	250:$2.0040 100:$2.1140 10:$2.4000 4:$2.7620
FCP11N60F DISTI # 31087105	ON Semiconductor	600V N-CHANNEL SUPERFET	100	5000:$1.5236 2000:$1.5360 1000:$1.6128 500:$1.9104 250:$2.1312 100:$2.2464 10:$2.5920
FCP11N60F DISTI # FCP11N60F	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Rail (Alt: FCP11N60F) RoHS: Compliant Min Qty: 1	Europe - 250	1:€1.8900 10:€1.6900 25:€1.6900 50:€1.5900 100:€1.4900 500:€1.4900 1000:€1.3900
FCP11N60F DISTI # FCP11N60F	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FCP11N60F) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$1.4900 2000:$1.4900 4000:$1.4900 6000:$1.4900 10000:$1.3900
FCP11N60F DISTI # FCP11N60F	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Rail (Alt: FCP11N60F) RoHS: Compliant Min Qty: 1000	Asia - 0
FCP11N60F	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	2246	1000:$1.9600 500:$2.0600 100:$2.1400 25:$2.2400 1:$2.4100
FCP11N60F DISTI # 512-FCP11N60F	ON Semiconductor	MOSFET 600V NCH MOSFET RoHS: Compliant	104	1:$3.1800 10:$2.7000 100:$2.3400 250:$2.2200 500:$1.9900 1000:$1.6800 2000:$1.6000 5000:$1.5400
FCP11N60F	ON Semiconductor	600 V N-CHANNEL MOSFET ROHS COMPLIANT, TO-220, 3 PIN RoHS: Compliant	Europe - 100
FCP11N60F DISTI # 1228346	ON Semiconductor	MOSFET, N, TO-220 RoHS: Compliant	0	1:$5.0300 10:$4.2800 100:$3.7100 250:$3.5200 500:$3.1500 1000:$2.6600 2000:$2.5400 5000:$2.4400
FCP11N60F DISTI # C1S541901387354	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	300	250:$2.0040 100:$2.1140 10:$2.4000 1:$2.7620
FCP11N60F DISTI # C1S226600615369	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	100	100:$2.7300 50:$2.9700 10:$3.6100 1:$5.5700

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